FEI Electronic Optics BV

Eindhoven, Netherlands

FEI Electronic Optics BV

Eindhoven, Netherlands
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Audoit G.,University Grenoble Alpes | Audoit G.,CEA Grenoble | Bleuet P.,University Grenoble Alpes | Bleuet P.,CEA Grenoble | And 2 more authors.
Conference Proceedings from the International Symposium for Testing and Failure Analysis | Year: 2016

Prior to x-ray tomography, cylindrically-shaped samples are obtained using an innovative milling strategy on a Plasma-FIB. The method presented consists of tuning the ion dose as a function of pixel coordinates along with optimization of the scan geometries, drastically reducing the preparation time and significantly improving the overall workflow efficiency. Copyright © 2016 ASM International® All rights reserved.


Grant
Agency: European Commission | Branch: FP7 | Program: MC-ITN | Phase: FP7-PEOPLE-2013-ITN | Award Amount: 3.40M | Year: 2014

The purpose of the SIMDALEE2 (Sources, Interaction with Matter, Detection and Analysis of Low Energy Electrons) network is to establish a world-class research training platform for the science and technology of nanoscale manipulation and analysis using low energy electrons. Apart from an effective and well-structured training programme, the network will pursue the following scientific goals: (1) optimizing beam size by correlating contemporary field emission (FE) theory with high resolution holographic measurements of magnetic and electric fields of FE tips with different shapes, both with and without primary electron optics; (2) putting the understanding of the contrast mechanism of electron beam techniques on a sound footing by comparing physical models with novel benchmark spectra acquired using a coincidence technique; (3) improving detection as well as understanding of emitted energy-, angular-, and spin-dependent spectra. This issue will be addressed for the common case of detectors in the a field-free environment, and for the special case when the emitted electrons encounter an electric field prior to detection; (4) Electron beam modification of nanostructured surfaces; (5) Progress in the aforementioned fields will lead to the development of an innovative prototypical methodology for nanoscale characterization with electron beams in the form of a compact desktop-type Near-Field-Emission Scanning Electron Microscope (NFESEM). Finally, (6) the economic impact and feasibility of low energy electron beam methodology will be investigated within the project. Accordingly, the ESRs and ERs will develop and acquire experience on a comprehensive methodology beneficial for any industrial or academic laboratory employing or developing electron beam techniques for natural science studies, as well as for biology and engineering. Their participation in this interdisciplinary and intersectoral network will greatly further their career opprtunities in S&T in Europe.


Grant
Agency: European Commission | Branch: H2020 | Program: ECSEL-IA | Phase: ECSEL-02-2014 | Award Amount: 139.30M | Year: 2015

The proposed pilot line project WAYTOGO FAST objective is to leverage Europe leadership in Fully Depleted Silicon on Insulator technology (FDSOI) so as to compete in leading edge technology at node 14nm and beyond preparing as well the following node transistor architecture. Europe is at the root of this breakthrough technology in More Moore law. The project aims at establishing a distributed pilot line between 2 companies: - Soitec for the fabrication of advanced engineered substrates (UTBB: Ultra Thin Body and BOx (buried oxide)) without and with strained silicon top film. - STMicroelectronics for the development and industrialization of state of the art FDSOI technology platform at 14nm and beyond with an industry competitive Power-Performance-Area-Cost (PPAC) trade-off. The project represents the first phase of a 2 phase program aiming at establishing a 10nm FDSOI technology for 2018-19. A strong added value network is created across this project to enhance a competitive European value chain on a European breakthrough and prepare next big wave of electronic devices. The consortium gathers a large group of partners: academics/institutes, equipment and substrate providers, semiconductor companies, a foundry, EDA providers, IP providers, fabless design houses, and a system manufacturer. E&M will contribute to the objective of installing a pilot line capable of manufacturing both advanced SOI substrates and FDSOI CMOS integrated circuits at 14nm and beyond. Design houses and electronics system manufacturer will provide demonstrator and enabling IP, to spread the FDSOI technology and establish it as a standard in term of leading edge energy efficient CMOS technology for a wide range of applications battery operated (consumer , healthcare, Internet of things) or not. Close collaboration between the design activities and the technology definition will tailor the PPAC trade-off of the next generation of technology to the applications needs.


Lyatti M.,Jülich Research Center | Savenko A.,FEI Electronic Optics BV | Savenko A.,Jülich Research Center | Poppe U.,CEOS GmbH
Superconductor Science and Technology | Year: 2016

Despite impressive progress in the development of superconducting nanowire single-photon detectors (SNSPD), the main obstacle for the widespread use of such detectors is the low operating temperature required for low-temperature superconductors. The very attractive idea of increasing the operating temperature using high-temperature superconductors for SNSPD fabrication is problematic due to the insufficient quality of ultra-thin films from high-temperature superconductors, which is one of the key requirements for the single-photon detection by superconducting nanowires. In this work, we demonstrate the possibility of fabricating ultra-thin YBa2Cu3O7-x films on SrTiO3 substrates with a surface flatness of ± 1 unit cell and a high critical current density up to 14 MA cm-2 at T = 78 K. The critical current density of ultra-thin films had very low value in the first three unit cell layers adjacent to the substrate and reached nearly the bulk value at the fifth layer. 97% of the superconducting current is carried by only two upper layers of a 5-unit-cell thick YBa2Cu3O7-x film. Due to such superconducting current distribution over the film thickness and good surface flatness 5-unit-cell thick YBa2Cu3O7-x films could be promising for the fabrication of single-photon detectors. © 2016 IOP Publishing Ltd.


Grant
Agency: European Commission | Branch: FP7 | Program: JTI-CP-ARTEMIS | Phase: SP1-JTI-ARTEMIS-2010-2 | Award Amount: 17.11M | Year: 2011

HIGH PROFILE combines industrial and clinical driven R&D activities dealing with image diagnostic platforms for the central nervous system. The projects approach is to progress state-of-the-art by integrating imaging equipment for diagnostics including algorithms, equipment and infrastructure for massive image processing and simulation to support combinations of images from different medical equipment modalities (MRI, MRS, fMRI, NIRS, EIT and EEG) and comparison/fusion of images with physiological models of central nervous systems. HIGH PROFILE aims to develop multi-scale, adaptive algorithms to merge information about the actual behavior of the brain, originating from (f)MRI, MRS, NIRS, EIT and EEG. These algorithms allow a physician to follow the status of the patient during his/her evolution, and be supported by a suitable content management platform and a data infrastructure capable of handling the massive quantities of data produced by these technologies, delivering them to their point of use. Better imaging of the central nervous system and the head/neck area will improve diagnosis treatment of neurological diseases like insomnia, depression, multiple sclerosis and epilepsy, as well as brain and head/neck cancer. The approach developed by HIGH PROFILE for these conditions should also be extendable to the whole field of advanced medical imaging. For deployment it is necessary to address the challenge of the increasing complexity of real time image processing. The necessary image processing components will be deployed on standard hardware to perform the necessary processing tasks. Image processing is a performance intensive task and system integrators will deploy it on emerging standard hardware platforms running (configurations of) multi-core processors. As this deployment is not only relevant for healthcare only, and a generic platform improves the possibilities to integrate external software, other domains are involved in the deployment of image processing chains. APPROVED BY ARTEMIS-JU 24/06/2014


Grant
Agency: European Commission | Branch: H2020 | Program: ECSEL-IA | Phase: ECSEL-15-2015 | Award Amount: 150.05M | Year: 2016

The TAKE5 project is the next in a chain of thematically connected ENIAC JU KET pilot line projects which are associated with 450mm/300mm development for the 10nm technology node and the ECSEL JU project SeNaTe aiming at the 7nm technology node. The main objective of the TAKE5 project is the demonstration of 5nm patterning in line with the industry needs and the ITRS roadmap in the Advanced Patterning Center at the imec pilot line using innovative design and technology co-optimization, layout and device architecture exploration, and comprising demonstration of a lithographic platform for EUV technology, advanced process and holistic metrology platforms and new materials. A lithography scanner will be developed based on EUV technology to achieve the 5nm module patterning specification. Metrology platforms need to be qualified for 5nm patterning of 1D, 2D and 3D geometries with the appropriate precision and accuracy. For the 5nm technology modules new materials will need to be introduced. Introduction of these new materials brings challenges for all involved deposition processes and the related equipment set. Next to new deposition processes also the interaction of the involved materials with subsequent etch steps will be studied. The project will be dedicated to find the best options for patterning. The project relates to the ECSEL work program topic Process technologies More Moore. It addresses and targets as set out in the MASP at the discovery of new Semiconductor Process, Equipment and Materials solutions for advanced CMOS processes that enable the nano-structuring of electronic devices with 5nm resolution in high-volume manufacturing and fast prototyping. The project touches the core of the continuation of Moores law which has celebrated its 50th anniversary and covers all aspects of 5nm patterning development.


Grant
Agency: European Commission | Branch: H2020 | Program: MSCA-ITN-ETN | Phase: MSCA-ITN-2015-ETN | Award Amount: 3.87M | Year: 2016

STREAM is a 4-year multi-site training network that aims at career development of Early Stage Researchers (ESRs) on scientific design, construction manufacturing and of advanced radiation instrumentation. STREAM targets the development of innovative radiation-hard, smart CMOS sensor technologies for scientific and industrial applications. The platform technology developed within the project will be tested in the demanding conditions posed by the CERN LHC detectors environment as well as European industry leaders in field of CMOS imaging, electron microscopy and radiation sensors. This leveraging factor will allow to fine-tune the technology to meet the requirements of industrial application cases on demand such as electron microscopy and medical X-ray imaging, as well as pathway towards novel application fields such as satellite environments, industrial X-ray systems and near-infrared imaging. The project will train a new generation of creative, entrepreneurial and innovative early-stage researchers and widen their academic career and employment opportunities. The STREAM consortium is composed of 10 research organisations and 5 industrial partners; the network will provide training to 17 ESRs. STREAM structures the research and training in four scientific work-packages which span the whole value-chain from research to application: CMOS Technologies Assessment, Smart Sensor Design and Layout, Validation and Qualification, Technology Integration, and Valorization.


Grant
Agency: European Commission | Branch: H2020 | Program: ECSEL-IA | Phase: ECSEL-02-2014 | Award Amount: 181.08M | Year: 2015

The SeNaTe project is the next in a chain of thematically connected ENIAC JU KET pilot line projects which are associated with 450mm/300mm development for the 12nm and 10nm technology nodes. The main objective is the demonstration of the 7nm IC technology integration in line with the industry needs and the ITRS roadmap on real devices in the Advanced Patterning Center at imec using innovative device architecture and comprising demonstration of a lithographic platform for EUV and immersion technology, advanced process and holistic metrology platforms, new materials and mask infrastructure. A lithography scanner will be developed based on EUV technology to achieve the 7nm module patterning specification. Metrology platforms need to be qualified for N7s 1D, 2D and 3D geometries with the appropriate precision and accuracy. For the 7nm technology modules a large number of new materials will need to be introduced. The introduction of these new materials brings challenges for all involved processes and the related equipment set. Next to new deposition processes also the interaction of the involved materials with subsequent etch, clean and planarization steps will be studied. Major European stakeholders in EUV mask development will collaboratively work together on a number of key remaining EUV mask issues. The first two years of the project will be dedicated to find the best options for patterning, device performance, and integration. In the last year a full N7 integration with electrical measurements will be performed to enable the validation of the 7nm process options for a High Volume Manufacturing. The SeNaTe project relates to the ECSEL work program topic Process technologies More Moore. It addresses and targets as set out in the MASP at the discovery of new Semiconductor Process, Equipment and Materials solutions for advanced CMOS processes that enable the nano-structuring of electronic devices with 7nm resolution in high-volume manufacturing and fast prototyping.


Grant
Agency: European Commission | Branch: H2020 | Program: ECSEL-RIA | Phase: ECSEL-06-2015 | Award Amount: 23.11M | Year: 2016

The objective of the 3DAM project is to develop a new generation of metrology and characterization tools and methodologies enabling the development of the next semiconductor technology nodes. As nano-electronics technology is moving beyond the boundaries of (strained) silicon in planar or finFETs, new 3D device architectures and new materials bring major metrology and characterization challenges which cannot be met by pushing the present techniques to their limits. 3DAM will be a path-finding project which supports and complements several existing and future ECSEL pilot-line projects and is linked to the MASP area 7.1 (subsection More Moore). Innovative demonstrators and methodologies will be built and evaluated within the themes of metrology and characterization of 3D device architectures and new materials, across the full IC manufacturing cycle from Front to Back-End-Of-Line. 3D structural metrology and defect analysis techniques will be developed and correlated to address challenges around 3D CD, strain and crystal defects at the nm scale. 3D compositional analysis and electrical properties will be investigated with special attention to interfaces, alloys and 2D materials. The project will develop new workflows combining different technologies for more reliable and faster results; fit for use in future semiconductor processes. The consortium includes major European semiconductor equipment companies in the area of metrology and characterization. The link to future needs of the industry, as well as critical evaluation of concepts and demonstrators, is ensured by the participation of IMEC and LETI. The project will directly increase the competitiveness of the strong Europe-based semiconductor Equipment industry. Closely connected European IC manufacturers will benefit by accelerated R&D and process ramp-up. The project will generate technologies essential for future semiconductor processes and for the applications enabled by the new technology nodes.


Viljoen F.,University of Johannesburg | Viljoen F.,De Beers Geoscience Center | Dobbe R.,FEI Electronic Optics B.V. | Harris J.,University of Glasgow | Smit B.,Anglo Research
Lithos | Year: 2010

Although diamonds of eclogitic paragenesis are commonly encountered in the productions of many Southern Africa kimberlites, the nature and evolution of the protolith to eclogitic diamonds are still poorly understood. There is some evidence that these protoliths (and possibly also the diamonds) may be related to subduction of oceanic crust, although this is not a universally accepted view. In order to further investigate the protolith/diamond relationship, garnets and (in some cases) clinopyroxene inclusions in 23 diamonds from Premier mine and 16 diamonds from Finsch were analysed for their trace element composition. From both mines a strong correlation between the garnet Ca content and the chondrite-normalised rare earth element (REE) pattern is evident. Garnets with comparatively low Ca content are characterised by REE patterns which show a steady increase in abundance from light rare earths (LREE) to heavy rare earths (HREE). With increasing Ca content in garnet, the abundance of LREE (La, Ce, Pr, and Nd) as well as the middle rare earths (MREE; Sm, Eu, Gd, and Tb) progressively increases, ultimately giving the trace element pattern a distinct 'humped' appearance. Bulk-rock trace element abundance patterns have been reconstructed from measured trace element contents in garnet as well as calculated trace element concentrations in clinopyroxene, based on known clinopyroxene-garnet partition coefficients (Harte and Kirkley, 1997). At both Premier and Finsch, the low-Ca group samples (2.6 to 5.0. wt.% CaO in garnet) are LREE depleted, and have relatively flat calculated bulk-rock trace element abundance patterns at approximately 10 times chondrite concentrations, but with marked positive Sr and negative Zr anomalies. The intermediate-Ca group samples (5.2 to ~9. wt.% CaO in garnet) are LREE depleted, show Sr and Zr anomalies, have somewhat higher concentrations of Zr and MREE, and have HREE contents that overlap with the low-Ca group (Fig. 6). High-Ca group samples (~. 9 to 14.8. wt.% CaO in garnet) are LREE depleted, show Sr and Zr anomalies, are MREE-enriched, and have HREE contents that are slightly less than the low- and intermediate-Ca group samples. Based on both the calculated bulk eclogite trace element abundances and their patterns, as well as previously published radiogenic isotope data, our preferred model of protolith evolution for the eclogitic diamonds from Premier and Finsch is one in which both the major and trace element chemistry of the inclusions are ultimately inherited from low-pressure oceanic protoliths, consisting of varying mixtures of oceanic basalt. +. cumulate gabbro for diamonds from both Premier and Finsch. Of particular importance in the current data are the presence of marked negative Zr anomalies, marked positive Sr anomalies, and a general absence of Eu anomalies in all compositional groupings. The Zr anomaly can arise in reconstructed bulk eclogite trace element abundance patterns if rutile is not included in the calculations, but the Sr anomalies (coupled with an absence of Eu anomalies) can only be explained through the mixing of oceanic gabbro and mid-ocean ridge basalt. The averaged eclogite bulk trace element compositions for Premier and Finsch are also markedly similar to that of clinopyroxene in a typical cumulate gabbro, and a role for cumulate clinopyroxene in protolith evolution may therefore also be inferred. It is likely that prior to and during diamond crystallisation, the major and particularly the trace element compositions of the high-pressure eclogite source rock to these diamonds may have been slightly modified by metasomatic fluids and melts. However large-scale fluid- or melt-related metasomatic processes are not indicated. © 2010 Elsevier B.V.

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