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Bratislava, Slovakia

Dubecky F.,Slovak Academy of Sciences | Gombia E.,CNR Institute of Materials for Electronics and Magnetism | Vanko G.,Slovak Academy of Sciences | Ferrari C.,CNR Institute of Materials for Electronics and Magnetism | And 6 more authors.
ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems | Year: 2012

The work reports on the characterization of high purity epitaxial 4H-SiC grown by liquid phase epitaxy and the performances of Au-Ni/4H-SiC detectors fabricated on the same material. X-ray diffraction and topography as well as I-V, C-V and DLTS measurements are used for the evaluation of the material properties and device characteristics. The X-ray detection abilities are evaluated by pulse-height spectra measurements of the 241Am. Preliminary results of the detector hardness to fast neutron and gamma ray radiations are also reported. © 2012 IEEE. Source


Dubecky F.,Slovak Academy of Sciences | Zat'Ko B.,Slovak Academy of Sciences | Vanko G.,Slovak Academy of Sciences | Hubik P.,ASCR Institute of Physics Prague | And 6 more authors.
Conference Proceedings - 10th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2014 | Year: 2014

M/Semi-insulating (SI) GaAs/M diodes with novel Mg-based metallization are investigated using current-voltage measurement, α-particle and photon detection. An anomalous decrease of the reverse current and peculiar photon spectra has been observed with such contact explainable by a strong electron accumulation due to the creation of a quasi-degenerate region at the Mg/SI-GaAs interface. © 2014 IEEE. Source


Chavdarova T.,FEEIT | Jakimovski G.,FEEIT | Jovanov B.,FEEIT | Tentov A.,FEEIT | Malenko M.,FEEIT
Lecture Notes in Electrical Engineering | Year: 2015

The goal of this paper is to design equalizer for a Single Carrier (SC) system operating in the 60 GHz frequency band. The main focus is to emphasize the important considerations that have to be investigated when implementing an equalizer in the millimeter wave technology, as well as to demonstrate its simplified design when it is being implemented in the frequency domain. In order to accomplish this task, the calculation of the needed coefficients has to be investigated, and therefore the channel characteristics. These coefficients would enable us to implement a simple form of an equalizer, using VHDL, which for the 60 GHz technology is an important module on the receiver side of the communication. At the end of the paper the results of the performed synthesis are being presented. © Springer International Publishing Switzerland 2015. Source

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