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Lyutsau A.V.,Federal State Enterprise Research and Development Enterprise pulSar | Krymko M.M.,Federal State Enterprise Research and Development Enterprise pulSar | Enisherlova K.L.,Federal State Enterprise Research and Development Enterprise pulSar | Temper E.M.,Federal State Enterprise Research and Development Enterprise pulSar | Razgulyaev I.I.,Federal State Enterprise Research and Development Enterprise pulSar
Russian Microelectronics | Year: 2013

Opportunities of the use of an XMD-300 diffractometer in three mapping schemes have been considered, namely, grazing primary beam, grazing diffracted beam, and the θ-2θ scheme, for the study of crystal perfection of semiconductor heterostructures (silicon-on-sapphire, silicon-on-insulator, ion-doped silica layers, and AlGaN/GaN/Si structures). It has been shown that the measurements with the use of three schemes in scattered radiation and in the exact performance of Bragg diffraction condition enable one to obtain a fringe pattern of diffraction simultaneously from crystal lattices of several layers of the heterostructure and interference peaks of maximum intensity for each individual layer. © 2013 Pleiades Publishing, Ltd.

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