Entity

Time filter

Source Type


Kagadei V.A.,Federal Research Institute of Semiconductor Devices | Nefyodtsev E.V.,Institute of High Current Electronics
Semiconductors | Year: 2010

Evolution of concentration profiles of all types of hydrogen particles, charge carriers, active doping impurity, and distribution of the electric field in the near-surface layer of hydrogenated p-GaAs during cooling the sample after finishing the stage of introduction of hydrogen is simulated. It is shown that the form of final concentration profiles of hydrogen-containing particles and distribution of the intrinsic electric field in the hydrogenated p-GaAs layer depend on the temperature-time mode of cooling the sample. The degree of the effect of the cooling rate on the final state of hydrogenated layer increases as the doping level of semiconductor is decreased. Systematic features of formation of the final state of the hydrogen-crystal system depending on the cooling rate of the sample are presented and discussed. © 2010 Pleiades Publishing, Ltd.


Shestakov A.K.,RAS Semiconductor Physics Institute | Zhuravlev K.S.,RAS Semiconductor Physics Institute | Arykov V.S.,Federal Research Institute of Semiconductor Devices | Kagadei V.A.,RPC Micran
Proceedings - 2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering, SIBIRCON-2010 | Year: 2010

Ion-implanted GaAs MESFET was modeled and dependences of MESFET characteristics on doping profile parameters were found. These dependences allow to optimize transistor for different applications (power, high frequency or low-noise transistors). © 2010 IEEE.


Arykov V.S.,Research and Production Company Micran | Gavrilova A.M.,Research and Production Company Micran | Dedkova O.A.,Federal Research Institute of Semiconductor Devices | Kagadei V.A.,Research and Production Company Micran
12th International Conference and Seminar on Micro/Nanotechnologies and Electron Devices, EDM'2011 - Proceedings | Year: 2011

The main aspects of the technology for GaAs heterojunction metal-semiconductor field effect transistors fabrication have been demonstrated. The self-aligned technology with multilayer dielectric dummy gate used for fabrication of the transistor with 0.5 microns gate length, molecular beam epitaxy for channel and ion implantation for drain and source regions formation are described. The dependencies of the maximal drain-source current Idsmax, gate-drain breakdown voltage BVgd and extrinsic transcon-ductance Gm as function of the gap between the gate and n-drain region Lgd were investigated. The threshold voltage Vth uniformity and small-signal measurement of the fabricated transistor are demonstrated. © 2011 IEEE.


Vorobiev A.P.,RAS Institute for High Energy Physics | Golovnya S.N.,RAS Institute for High Energy Physics | Gorokhov S.A.,RAS Institute for High Energy Physics | Parakhin V.V.,RAS Institute for High Energy Physics | And 9 more authors.
Biomedical Engineering | Year: 2013

A matrix gallium-arsenide detector for roentgenography and nondestructive monitoring is described in this work. The detector contains 128 × 128 sensitive elements with 50-μm pitch, an analog multiplexor, and a system for information acquisition. The detector is intended for use in low- or medium-dose medical X-ray apparatuses. It can also be used for nondestructive defectoscopy. © 2013 Springer Science+Business Media New York.


Anishchenko E.V.,Research and Production Company Micran | Arykov V.S.,Research and Production Company Micran | Gavrilova A.M.,Research and Production Company Micran | Dedkova O.A.,Federal Research Institute of Semiconductor Devices | And 4 more authors.
2010 IEEE 2nd Russia School and Seminar on Fundamental Problems of Micro/Nanosystems Technologies, MNST'2010 | Year: 2010

This paper demonstrates the main aspects of the technology for GaAs microwave monolithic integrated circuits fabrication. The self-aligned technology with multilayer dielectric "dummy gate" used for fabrication of the metal-semiconductor field effect transistor with 0.5 microns gate length and ion implantation for channel, drain and source regions formation is described. Methods of front- and backside processing and specifications of control MMICs such as L-, S- and X-band switches, attenuators and phase-shifters are described. © 2010 IEEE.

Discover hidden collaborations