Gennevilliers, France
Gennevilliers, France

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Excico Inc. and University College Cork | Date: 2014-01-30

The invention provides a method of forming at least one Metal Germanide contact on a substrate for providing a semiconducting device (100) by providing a first layer (120) of Germanium (Ge) and a second layer of metal. The invention provides a step of reacting the second layer with the first layer with high energy density pulses for obtaining a Germanide metal layer (160A) having a substantially planar interface with the underlying first (Ge) layer.

Fisicaro G.,CNR Institute for Microelectronics and Microsystems | Huet K.,Excico Inc. | Negru R.,Excico Inc. | Hackenberg M.,Fraunhofer Institute for Integrated Systems and Device Technology | And 4 more authors.
Physical Review Letters | Year: 2013

Anomalous impurity redistribution after a laser irradiation process in group-IV elements has been reported in numerous papers. In this Letter, we correlate this still unexplained behavior with the peculiar bonding character of the liquid state of group-IV semiconductors. Analyzing the B-Si system in a wide range of experimental conditions we demonstrate that this phenomenon derives from the non-Fickian diffusion transport of B in l-Si. The proposed diffusion model relies on the balance between two impurity states in different bonding configurations: one migrating at higher diffusivity than the other. This microscopic mechanism explains the anomalous B segregation, whereas accurate comparisons between experimental chemical profiles and simulation results validate the model. © 2013 American Physical Society.

Qiu Y.,Roche Holding AG | Cristiano F.,Roche Holding AG | Huet K.,Excico Inc. | Mazzamuto F.,Excico Inc. | And 7 more authors.
Nano Letters | Year: 2014

Damage evolution and dopant distribution during nanosecond laser thermal annealing of ion implanted silicon have been investigated by means of transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography. Different melting front positions were realized and studied: nonmelt, partial melt, and full melt with respect to the as-implanted dopant profile. In both boron and silicon implanted silicon samples, the most stable form among the observed defects is that of dislocation loops lying close to (001) and with Burgers vector parallel to the [001] direction, instead of conventional {111} dislocation loops or {311} rod-like defects, which are known to be more energetically favorable and are typically observed in ion implanted silicon. The observed results are explained in terms of a possible modification of the defect formation energy induced by the compressive stress developed in the nonmelted regions during laser annealing. © 2014 American Chemical Society.

Hackenberg M.,Fraunhofer Institute for Integrated Systems and Device Technology | Pichler P.,Fraunhofer Institute for Integrated Systems and Device Technology | Pichler P.,Friedrich - Alexander - University, Erlangen - Nuremberg | Huet K.,Excico Inc. | And 5 more authors.
Applied Surface Science | Year: 2012

We present an enthalpy-based model for pulsed excimer laser annealing of crystalline silicon in the melting regime that integrates into the technology computer-aided design (TCAD) suite Sentaurus Process of Synopsys. The currently one-dimensional model includes laser absorption, a transient simulation of the heat flux, melting of the surface layer, and undercooling during recrystallization. To verify the model, its predictions for a laser pulse with a duration of ∼150 ns and a wavelength of 308 nm were compared to those of a phase-field implementation of melting laser annealing by La Magna et al. The two models show a good agreement for the melt depth, melt duration, and melt front dynamics. In a second step, model predictions were compared to melt depths extracted from SIMS measurements of ion implanted and excimer-laser-annealed silicon samples. They were found to agree within the experimental error. Variation of the beam parameters indicated a strong influence of laser energy density fluctuations on the melt depth. © 2012 Elsevier B.V.

Shayesteh M.,Tyndall National Institute | Huet K.,Excico Inc. | Toque-Tresonne I.,Excico Inc. | Negru R.,Excico Inc. | And 8 more authors.
IEEE Transactions on Electron Devices | Year: 2013

In this paper, state-of-the-art laser thermal annealing is used to form germanide contacts on n-doped Ge and is systematically compared with results generated by conventional rapid thermal annealing. Surface topography, interface quality, crystal structure, and material stoichiometry are explored for both annealing techniques. For electrical characterization, specific contact resistivity and thermal stability are extracted. It is shown that laser thermal annealing can produce a uniform contact with a remarkably smooth substrate interface with specific contact resistivity two to three orders of magnitude lower than the equivalent rapid thermal annealing case. It is shown that a specific contact resistivity of 2.84× 10-7Ω cm 2 is achieved for optimized laser thermal anneal energy density conditions. © 1963-2012 IEEE.

Huet K.,Excico Inc. | Boniface C.,Excico Inc. | Negru R.,Excico Inc. | Venturini J.,Excico Inc.
AIP Conference Proceedings | Year: 2012

Annealing of 3D architectures is one of the major challenges for current and next generation devices. Recent development in vertically stacking functional layers of devices to increase the density per unit area of memories is bringing to the front very low thermal budget annealing technologies. In this work, we demonstrate that Laser Thermal Annealing is an adapted process for Si-based access device formation of 3D crossbar compatible memory cell architectures such as PCRAM and ReRAM, which require ultra low thermal budget, good crystalline quality and diffusion control. © 2012 American Institute of Physics.

An apparatus for irradiating a semiconductor is disclosed. The apparatus has a curved mirror with a reflective surface of revolution, and a point source generating an irradiation beam being incident on the curved mirror along an incident direction. The curved mirror and the point source form a system having an axis of revolution wherein the point source is provided on or near said axis of revolution. The axis of revolution substantially coincides with a straight line projection to be generated on a semiconductor substrate. Additionally, the use of such an apparatus for manufacturing a selective emitter grid, or for irradiating a large area semiconductor surface in a scanning movement, is disclosed.

A method for irradiating semiconductor material is provided which includes selecting a region of a semiconductor layer surface, irradiating the region with an excimer laser which has a beam spot size, and adjusting the beam spot size to match the selected region size. Further, an apparatus for irradiating semiconductor material is provided. The apparatus includes an excimer laser for irradiating a selected region of a semiconductor layer surface, the laser has a laser beam spot size, and a system for adjusting the laser beam spot size to match the selected region size.

A method for making a semiconductor device including the steps of exposing a semiconductor substrate to a process step or sequence of process steps of which at least one process performance parameter is determined in a region of the semiconductor substrate, and irradiating the region with a laser having laser irradiation parameters; wherein the irradiation parameters are determined based on the at least one process performance parameter.

An apparatus for irradiating semiconductor material is disclosed having, a laser generating a primary laser beam, an optical system and a means for shaping the primary laser beam, comprising a plurality of apertures for shaping the primary laser beam into a plurality of secondary laser beams. Wherein the shape and/or size of the individual apertures corresponds to that of a common region of a semiconductor material layer to be irradiated. The optical system is adapted for superposing the secondary laser beams to irradiate said common region. Further, the use of such an apparatus in semiconductor device manufacturing is disclosed.

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