EXCICO Group NV

Hasselt, Belgium

EXCICO Group NV

Hasselt, Belgium
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Gall S.,French National Solar Energy Institute | Paviet-Salomon B.,French National Solar Energy Institute | Lerat J.,EXCICO Group NV | Emeraud T.,EXCICO Group NV
Energy Procedia | Year: 2012

In this paper strategy combining both high passivation quality on n + surface depleted emitter and P and B dopant source availability for further laser doping process from SiN:P and SiN:B layers is investigated. Passivation improvement is demonstrating by adding SiO2 based interfacial layer between n+ emitter and doped SiNx layer. Moreover efficient Excimer laser P and B doping is highlighted even through additional passivation layers. Surface concentration, profile shape and depth of both p+ and n+ doped regions could be tuned by using SiN:P or SiN:B layers, SiO2 interfacial layer type and laser fluence conditions. It is highlighted fluence ranges where the initial emitter can be fully compensated or over-compensated. Such processes could be helpful to simplify the complex fabrication of photovoltaic structures like IBC solar cells.


Gall S.,French National Solar Energy Institute | Paviet-Salomon B.,French National Solar Energy Institute | Lerat J.,EXCICO Group NV | Emeraud T.,EXCICO Group NV
Energy Procedia | Year: 2012

In this paper an Excimer laser doping process is investigated from SiN:P and SiN:B PECVD layers used as dopant sources. It is demonstrated efficient doping effect with P and B with large doping range on both p+ and n+ prediffused regions. Doped regions are shown to be modified in term of surface concentration and depth by both laserdriven re-distribution and additional over-doping from doped dielectric source. When using laser doping from SiN:B layer, partial or complete compensation of the initial n+ emitter is highlighted. Moreover similar study with SiN:P demonstrated the potential for over-compensate the initial p+ emitter. These laser processes could be used for realization of adjacent p+ and n + regions with controlled profiles. Moreover fluence ranges where material could be fully compensated are pointed.


Johnson E.V.,Ecole Polytechnique - Palaiseau | Prodhomme P.,Total S.A. | Boniface C.,EXCICO France SAS | Huet K.,EXCICO France SAS | And 2 more authors.
Solar Energy Materials and Solar Cells | Year: 2011

We demonstrate the effect of excimer (XeCl=308 nm) laser annealing on thin films of ZnO:Al deposited by RF sputtering at room temperature. The as-deposited films have good sheet resistance (<11 Ω/□) but poor transparency, and a subsequent chemical etching step using dilute HCl to texture the film surface results in a level of haze ineffective for light-trapping in thin film photovoltaic cells. Excimer laser annealing at the optimized fluence (single pulses of 0.50.7 J/cm2) improves the film transparency, particularly through a blue-shift in the band-gap, without significantly impacting the conductivity. More importantly, chemical etching of these laser annealed films results in textured films with controllable spectral distributions of haze. We demonstrate the enhanced optical properties (transmission and haze) after laser annealing and etching the ZnO:Al films through the fabrication of hydrogenated microcrystalline silicon pin solar cells, and show a significant improvement in the photocurrent density (up to 2.2 mA/cm2) for the optimally annealed substrates - particularly at wavelengths greater than 600 nm (up to 1.7 mA/cm2) where light-trapping is important. © 2011 Elsevier B.V. All rights reserved.


Patent
French National Center for Scientific Research, Ecole Polytechnique - Palaiseau, Total S.A. and Excico Group NV | Date: 2012-06-27

The present invention is directed to a method for fabricating a photovoltaic device, comprising depositing a transparent conductive oxide (TCO) layer on a substrate, exposing the TCO layer to laser irradiation using a set of irradiation parameters, and exposing the laser irradiated TCO layer to an etching process using a set of etching parameters, characterized in that the irradiation parameters and the etching parameters are selected such that the haze% of the TCO layer increases compared to the as deposited TCO layer.Additionally, the present invention is directed to a TCO layer having a haze% of at least 20% for an incident light wavelength contained in the range between 350 and 1300 nm.Further the present invention is directed to a photovoltaic device comprising such TCO-layer.


Patent
Imec, K.U.Leuven R&D and Excico Group NV | Date: 2012-11-23

The present invention is related to a method for forming a metal silicide layer on a textured silicon substrate surface. The method includes providing a metal layer on a textured silicon substrate and performing a pulsed laser annealing step providing at least one UV laser pulse with a laser fluence in the range between 0.1 J/cm^(2 )and 1.5 J/cm^(2 )and with a laser pulse duration in the range between 1 ns and 10 ms. Then, the method includes converting at least part of the metal layer into a metal silicide layer. In addition, the present invention is related to the use of such a method in a process for fabricating a photovoltaic cell, wherein the dielectric layer is a surface passivation layer, or wherein the dielectric layer is an antireflection coating.


A method for fabricating a photovoltaic device, including depositing a TCO-layer on a substrate and annealing the TCO layer by laser irradiation having irradiation parameters, wherein the irradiation parameters are selected such that the annealing includes increasing the haze % of the TCO layer compared to the as deposited TCO layer. Additionally, a TCO layer having a haze % of at least 2% in the visible light wavelength range and a surface roughness of less than 0 nanometer RMS, and a photovoltaic device including such TCO-layer.


Patent
Excico Group Nv | Date: 2011-02-21

A method for forming a selective contact for a photovoltaic cell is disclosed. The method includes forming a doped contact layer at the surface of a semiconductor substrate and annealing a portion of the doped contact layer with a laser beam, the portion having a 2D-pattern corresponding to at least a portion of a respective selective contact grid. Wherein the laser beam is pulsed and shaped to the 2D-pattern. A photovoltaic cell having a selective contact formed by the method is also provided.


Patent
Excico Group NV | Date: 2011-08-31

The present invention is directed to a method for forming a selective contact for a photovoltaic cell comprising:a. forming a doped contact layer at the surface of a semiconductor substrate;b. annealing a portion of the doped contact layer with a laser beam, said portion having a 2D-pattern corresponding to at least a portion of a respective selective contact grid;characterized in that the laser beam is pulsed and shaped to the 2D-pattern. In addition, the present invention is also directed to a photovoltaic cell comprising a selective contact formed by that method.


Patent
Excico Group NV | Date: 2014-11-19

The present invention is directed to a method for forming a metal silicide layer for a photovoltaic cell contact, the method comprising:- a step of depositing a first metal layer on a silicon substrate surface,- a step of performing a laser annealing step thereby forming metal silicidecharacterized in that said steps are part of an in-line continuous process.. In addition, the present invention is directed to an apparatus for forming a metal silicide layer for a photovoltaic cell contact, the apparatus comprising:- a first deposition station for providing a first metal layer on a silicon substrate surface,- a laser annealing station for annealing thereby forming metal silicide- a substrate transport meanscharacterized in that at least the first deposition station, the laser annealing station and the substrate transport means are adapted to integrated in-line continuous processing.


The present invention is directed to a method for fabricating a photovoltaic device, comprising depositing a TCO-layer on a substrate and annealing the TCO layer by laser irradiation having irradiation parameters, characterized in that the irradiation parameters are selected such that the annealing comprises increasing the haze% of the TCO layer compared to the as deposited TCO layer. Additionally, the present invention is directed to a TCO layer having a haze% of at least 2% in the visible light wavelength range and a surface roughness of less than 10 nanometer RMS. Further the present invention is directed to a photovoltaic device comprising such TCO-layer.

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