News Article | May 16, 2017
NEW YORK, May 16, 2017 /PRNewswire/ -- About UV Lamp UV lamps are lighting sources in the UV spectrum with wavelengths ranging between 100 nm and 400 nm. They emit electromagnetic radiations and are commonly used for detection, printing, industrial curing, air purification, medical and biomedical applications, dermatological, currency validation, forensics, photopolymerization, spectroscopy, dental curing, sterilization, and security applications. UV light-emitting diodes (LEDs) are preferred over traditional UV lamps due to the presence of mercury content in traditional lamps. They also have lower power consumption, low current requirement, long lifespan, and environment-friendly attributes. These factors accelerate their adoption in the market. Read the full report: http://www.reportlinker.com/p04899099/Global-UV-Lamp-Market.html Technavio's analysts forecast the global UV lamp market to grow at a CAGR of 13.32% during the period 2017-2021. Covered in this report The report covers the present scenario and the growth prospects of the global UV lamp market for 2017-2021. To calculate the market size, the report presents a detailed picture of the market by way of study, synthesis, and summation of data from multiple sources. The market is divided into the following segments based on geography: • Americas • APAC • EMEA Technavio's report, Global UV Lamp Market 2017-2021, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market. Key vendors • Philips • OSRAM • Heraeus Other prominent vendors • Atlantic Ultraviolet • Advanced Optoelectronic Technology • Calgon Carbon • DOWA Electronics Materials • Excelitas Technologies • Honle Group • Integration Technology • IST METZ • Luminus Devices (subsidiary of Lightera) • Lextar Electronics (a brand of Micron Technology) • Nordson • Nitride Semiconductors • Panasonic • Phoseon • SEOUL VIOSYS Market driver • Inception of energy-efficiency certification programs. • For a full, detailed list, view our report Market challenge • Health hazards associated with UV lamps and high cost of substrates. • For a full, detailed list, view our report Market trend • Increased adoption of UV LEDs in consumer electronics. • For a full, detailed list, view our report Key questions answered in this report • What will the market size be in 2021 and what will the growth rate be? • What are the key market trends? • What is driving this market? • What are the challenges to market growth? • Who are the key vendors in this market space? • What are the market opportunities and threats faced by the key vendors? • What are the strengths and weaknesses of the key vendors? You can request one free hour of our analyst's time when you purchase this market report. Details are provided within the report. Methodology Read the full report: http://www.reportlinker.com/p04899099/Global-UV-Lamp-Market.html About Reportlinker ReportLinker is an award-winning market research solution. Reportlinker finds and organizes the latest industry data so you get all the market research you need - instantly, in one place. http://www.reportlinker.com __________________________ Contact Clare: firstname.lastname@example.org US: (339)-368-6001 Intl: +1 339-368-6001 To view the original version on PR Newswire, visit:http://www.prnewswire.com/news-releases/global-uv-lamp-market-2017-2021-300458653.html
Chen N.,National University of Singapore |
Chen N.,NUS Suzhou Research Institute NUSRI |
Pitchappa P.,National University of Singapore |
Pitchappa P.,NUS Suzhou Research Institute NUSRI |
And 8 more authors.
Journal of Applied Physics | Year: 2016
The versatility of mid-infrared metamaterial absorbers along with the ease of fabrication has been widely used in thermal imaging, molecule sensing, and many other applications. Controllable multispectral absorption is highly required for small footprint, multi-purpose, and real-time sensing applications. In this paper, we present the polarization control of interchangeable multispectral absorption based on the dual-band metamaterial absorber in split mode. Large modulation depth of absorption is obtained during multi-band transition through polarization control. We perform theoretical and numerical analysis to explain the results by formulating an equivalent circuit for the asymmetric cross resonator. Thermal controllability is also demonstrated to show the reversible and repeatable manipulation of absorption intensity at a given wavelength. Moreover, we characterized the limitation of this device under extreme high temperature. This work offers a design methodology for interchangeable multispectral metamaterial absorber from a new perspective by adopting polarization of incident light as a control mechanism, and this will open up possibilities for many valuable applications in the future. © 2016 Author(s).
Ho C.P.,National University of Singapore |
Pitchappa P.,National University of Singapore |
Lin Y.-S.,National University of Singapore |
Huang C.-Y.,Tunghai University |
And 2 more authors.
Applied Physics Letters | Year: 2014
We present the design, simulation, fabrication, and characterization of a continuously tunable Omega-ring terahertz metamaterial. The tunability of metamaterial is obtained by integrating microactuators into the metamaterial unit cell. Electrothermal actuation mechanism is used to provide higher tuning range, larger stroke, and enhanced repeatability. The maximum achieved tuning range for the resonant frequency is around 0.30 THz for the input power of 500mW. This shows the potential of using electrothermally actuated microactuators based tunable metamaterial design for application such as filters, absorbers, sensors, and spectral imagers. © 2014 AIP Publishing LLC.
Zhou H.,National University of Singapore |
Kropelnicki P.,Excelitas Technologies |
Lee C.,National University of Singapore
Nanoscale | Year: 2015
Although significantly reducing the thermal conductivity of silicon nanowires has been reported, it remains a challenge to integrate silicon nanowires with structure materials and electrodes in the complementary metal-oxide-semiconductor (CMOS) process. In this paper, we investigated the thermal conductivity of nanometer-thick polycrystalline silicon (poly-Si) theoretically and experimentally. By leveraging the phonon-boundary scattering, the thermal conductivity of 52 nm thick poly-Si was measured as low as around 12 W mK-1 which is only about 10% of the value of bulk single crystalline silicon. The ZT of n-doped and p-doped 52 nm thick poly-Si was measured as 0.067 and 0.024, respectively, while most previously reported data had values of about 0.02 and 0.01 for a poly-Si layer with a thickness of 0.5 μm and above. Thermopile infrared sensors comprising 128 pairs of thermocouples made of either n-doped or p-doped nanometer-thick poly-Si strips in a series connected by an aluminium (Al) metal interconnect layer are fabricated using microelectromechanical system (MEMS) technology. The measured vacuum specific detectivity (D∗) of the n-doped and p-doped thermopile infrared (IR) sensors are 3.00 × 108 and 1.83 × 108 cm Hz1/2 W-1 for sensors of 52 nm thick poly-Si, and 5.75 × 107 and 3.95 × 107 cm Hz1/2 W-1 for sensors of 300 nm thick poly-Si, respectively. The outstanding thermoelectric properties indicate our approach is promising for diverse applications using ultrathin poly-Si technology. This journal is © The Royal Society of Chemistry.
Berard P.,Excelitas Technologies |
Couture M.,Excelitas Technologies |
Deschamps P.,Excelitas Technologies |
Laforce F.,Excelitas Technologies |
Dautet H.,Excelitas Technologies
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | Year: 2012
SiPM-based detectors are foreseen as good candidates for low light level detection applications requiring timing resolution in the few hundreds of picoseconds range. We report here the development of a UV enhanced SiPM with low dark count rate particularly well suited for high energy physics and medical imaging. In order to address different applications, we have produced a range of 1, 3, and 5 mm SiPMs with 25, 50, and 100 μm micro-cells size (1600, 400, and 100 micro-cells) with geometrical efficiencies ranging from 21% to 79%. Our highest geometrical efficiency 1 mm SiPM has reached a PDE of 40% in photon counting mode at 440 nm and a dark count rate as low as 200 kcps/mm 2 at 25 °C and an overvoltage of 3%. To our knowledge this is the lowest dark count rate under above conditions reported so far. Breakdown voltage is in the 130-150 V range, quench resistance is in the order of 1.5 MΩ, while the chip capacitance is of the order of 10 pF/mm 2. All characteristics from this novel low dark count SiPM design will be presented and compared, further developments and improvements will also be discussed. © 2011 Elsevier B.V.
Excelitas Technologies | Date: 2016-07-02
A detonator comprised of a conductive bridge, an inert flying plate, a barrel connector and a compacted explosive, all of which are contained in a hermetically sealed package.
PubMed | Institute of Microelectronics, Singapore, Nanyang Technological University, Excelitas Technologies, Chongqing University and Korea Advanced Institute of Science and Technology
Type: Journal Article | Journal: The Review of scientific instruments | Year: 2016
The parasitic effects from electromechanical resonance, coupling, and substrate losses were collected to derive a new two-port equivalent-circuit model for Lamb wave resonators, especially for those fabricated on silicon technology. The proposed model is a hybrid -type Butterworth-Van Dyke (PiBVD) model that accounts for the above mentioned parasitic effects which are commonly observed in Lamb-wave resonators. It is a combination of interdigital capacitor of both plate capacitance and fringe capacitance, interdigital resistance, Ohmic losses in substrate, and the acoustic motional behavior of typical Modified Butterworth-Van Dyke (MBVD) model. In the case studies presented in this paper using two-port Y-parameters, the PiBVD model fitted significantly better than the typical MBVD model, strengthening the capability on characterizing both magnitude and phase of either Y11 or Y21. The accurate modelling on two-port Y-parameters makes the PiBVD model beneficial in the characterization of Lamb-wave resonators, providing accurate simulation to Lamb-wave resonators and oscillators.
News Article | February 2, 2016
News Article | November 9, 2015
News Article | December 5, 2016
This report studies sales (consumption) of Thermopile Microbolometer Infrared Detector in United States market, focuses on the top players, with sales, price, revenue and market share for each player, covering Excelitas Technologies Nippon Ceramic Hamamatsu Photonic Murata Manufacturing Flir Systems Texas Instruments Sofradir Infra TEC GmbH View Full Report With Complete TOC, List Of Figure and Table: http://globalqyresearch.com/united-states-thermopile-microbolometer-infrared-detector-market-report-2016 Split by product types, with sales, revenue, price, market share and growth rate of each type, can be divided into Type I Type II Type III Split by applications, this report focuses on sales, market share and growth rate of Thermopile Microbolometer Infrared Detector in each application, can be divided into Industrial Medicine Military and Defense Automotive Others United States Thermopile Microbolometer Infrared Detector Market Report 2016 1 Thermopile Microbolometer Infrared Detector Overview 1.1 Product Overview and Scope of Thermopile Microbolometer Infrared Detector 1.2 Classification of Thermopile Microbolometer Infrared Detector 1.2.1 Type I 1.2.2 Type II 1.2.3 Type III 1.3 Application of Thermopile Microbolometer Infrared Detector 1.3.1 Industrial 1.3.2 Medicine 1.3.3 Military and Defense 1.3.4 Automotive 1.3.5 Others 1.4 United States Market Size Sales (Value) and Revenue (Volume) of Thermopile Microbolometer Infrared Detector (2011-2021) 1.4.1 United States Thermopile Microbolometer Infrared Detector Sales and Growth Rate (2011-2021) 1.4.2 United States Thermopile Microbolometer Infrared Detector Revenue and Growth Rate (2011-2021) 5 United States Thermopile Microbolometer Infrared Detector Manufacturers Profiles/Analysis 5.1 Excelitas Technologies 5.1.1 Company Basic Information, Manufacturing Base and Competitors 5.1.2 Thermopile Microbolometer Infrared Detector Product Type, Application and Specification 188.8.131.52 Type I 184.108.40.206 Type II 5.1.3 Excelitas Technologies Thermopile Microbolometer Infrared Detector Sales, Revenue, Price and Gross Margin (2011-2016) 5.1.4 Main Business/Business Overview 5.2 Nippon Ceramic 5.2.2 Thermopile Microbolometer Infrared Detector Product Type, Application and Specification 220.127.116.11 Type I 18.104.22.168 Type II 5.2.3 Nippon Ceramic Thermopile Microbolometer Infrared Detector Sales, Revenue, Price and Gross Margin (2011-2016) 5.2.4 Main Business/Business Overview 5.3 Hamamatsu Photonic 5.3.2 Thermopile Microbolometer Infrared Detector Product Type, Application and Specification 22.214.171.124 Type I 126.96.36.199 Type II 5.3.3 Hamamatsu Photonic Thermopile Microbolometer Infrared Detector Sales, Revenue, Price and Gross Margin (2011-2016) 5.3.4 Main Business/Business Overview 5.4 Murata Manufacturing 5.4.2 Thermopile Microbolometer Infrared Detector Product Type, Application and Specification 188.8.131.52 Type I 184.108.40.206 Type II 5.4.3 Murata Manufacturing Thermopile Microbolometer Infrared Detector Sales, Revenue, Price and Gross Margin (2011-2016) 5.4.4 Main Business/Business Overview 5.5 Flir Systems 5.5.2 Thermopile Microbolometer Infrared Detector Product Type, Application and Specification 220.127.116.11 Type I 18.104.22.168 Type II 5.5.3 Flir Systems Thermopile Microbolometer Infrared Detector Sales, Revenue, Price and Gross Margin (2011-2016) 5.5.4 Main Business/Business Overview 5.6 Texas Instruments 5.6.2 Thermopile Microbolometer Infrared Detector Product Type, Application and Specification 22.214.171.124 Type I 126.96.36.199 Type II 5.6.3 Texas Instruments Thermopile Microbolometer Infrared Detector Sales, Revenue, Price and Gross Margin (2011-2016) 5.6.4 Main Business/Business Overview 5.7 Sofradir 5.7.2 Thermopile Microbolometer Infrared Detector Product Type, Application and Specification 188.8.131.52 Type I 184.108.40.206 Type II 5.7.3 Sofradir Thermopile Microbolometer Infrared Detector Sales, Revenue, Price and Gross Margin (2011-2016) 5.7.4 Main Business/Business Overview 5.8 Infra TEC GmbH 5.8.2 Thermopile Microbolometer Infrared Detector Product Type, Application and Specification 220.127.116.11 Type I 18.104.22.168 Type II 5.8.3 Infra TEC GmbH Thermopile Microbolometer Infrared Detector Sales, Revenue, Price and Gross Margin (2011-2016) 5.8.4 Main Business/Business Overview Global QYResearch ( http://globalqyresearch.com/ ) is the one spot destination for all your research needs. 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