Epistar Corp. is the largest manufacturer of light-emitting diodes in Taiwan. The company was established in 1996, and its headquarters are in the Northern Taiwanese city of Hsinchu, In 2009 it had an annual turnover of NT$10 billion.Epistar specialises in high-brightness LED products, which are used in general lighting, traffic signals, and various consumer products such as mobile phones and laptop computers. The company supplies the LED backlighting for Samsung liquid crystal displays.It is the world's largest manufacturer of red and yellow LEDs, and holds over 1000 patents. It has a history of patent disputes with competitor Philips Lumileds over the use of AlInGaP LED technology. However in September, 2009, Philips Lumileds signed an agreement to license AlInGaP technology to Epistar. Wikipedia.
Epistar Corporation | Date: 2016-03-10
A lighting apparatus includes a carrier, a first light-emitting element, and a cover body. The carrier has a top surface. The first light-emitting element is formed on the top surface. The cover body covers the carrier and exposes the first light-emitting element. The lighting apparatus has a luminous flux greater than 350 lumens.
Epistar Corporation | Date: 2016-08-18
A light-emitting device is disclosed. The light-emitting device comprises a substrate; a barrier; a light-emitting structure formed between the substrate and the barrier, comprising a first region and a second region on a same plane; and a transparent conductive layer formed on the barrier layer and the second region; wherein the barrier layer is formed on the first region, the barrier layer has a sidewall and a bottom surface facing the first region; wherein an angle between the sidewall and the bottom surface is between 10-70.
Epistar Corporation | Date: 2016-07-22
A light-emitting device includes a carrier with a first surface and a second surface opposite to the first surface; and a light-emitting unit disposed on the first surface and configured to emit a light toward but not passing through the first surface. When emitting the light, the light-emitting device has a first light intensity above the first surface, and a second light intensity under the second surface, a ratio of the first light intensity to the second light intensity is in a range of 29.
Epistar Corporation | Date: 2016-10-05
A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located.
Epistar Corporation | Date: 2016-09-15
A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 m, and the thickness of the lower semiconductor stack is small than or equal to 1 m.
Epistar Corporation | Date: 2016-09-14
A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.
Epistar Corporation | Date: 2016-06-30
A thin-film deposition apparatus comprises a chamber; a carrier in the chamber; a showerhead on the carrier, wherein the showerhead comprises multiple first gas-dispensing holes, multiple second gas-dispensing holes and multiple plasma-generating portions; and a first gas inlet system for providing a first process gas, wherein the first process gas outputted from the multiple first gas-dispensing holes.
Epistar Corporation | Date: 2016-09-22
A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.
Epistar Corporation | Date: 2016-06-29
This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting diode, a metal bump, and a reflective insulation layer. The light-emitting diode includes an active layer, an insulation layer formed on the active layer and having a side surface, and a pad electrically connected to the active layer. The metal bump is formed on the pad. The reflective insulation layer covers the side surface.
Epistar Corporation | Date: 2016-09-02
An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a conversion unit between the first conductivity layer and the second conductivity layer, wherein the first conductivity layer is closer to the substrate than the second conductivity layer is to the substrate, and the second conductivity layer comprises a top surface perpendicular to a thickness direction of the semiconductor system, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer of the semiconductor system; a second electrical connector comprising a shape formed on the second conductivity layer of the semiconductor system; and a contact layer formed on the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system, wherein the contact layer comprises a discontinuous region exposing the top surface of the second conductivity layer, the discontinuous region is formed along the shape of the second electrical connector.