Hsinchu, Taiwan
Hsinchu, Taiwan

Epistar Corp. is the largest manufacturer of light-emitting diodes in Taiwan. The company was established in 1996, and its headquarters are in the Northern Taiwanese city of Hsinchu, In 2009 it had an annual turnover of NT$10 billion.Epistar specialises in high-brightness LED products, which are used in general lighting, traffic signals, and various consumer products such as mobile phones and laptop computers. The company supplies the LED backlighting for Samsung liquid crystal displays.It is the world's largest manufacturer of red and yellow LEDs, and holds over 1000 patents. It has a history of patent disputes with competitor Philips Lumileds over the use of AlInGaP LED technology. However in September, 2009, Philips Lumileds signed an agreement to license AlInGaP technology to Epistar. Wikipedia.

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Patent
Epistar Corporation | Date: 2016-11-14

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.


Patent
Epistar Corporation | Date: 2017-02-09

A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of patterned units comprises a plurality of connecting sides constituting a polygon shape in a top view of the light-emitting device, the one of the plurality of patterned units comprises a vertex and a plurality of inclined surfaces respectively extending from the plurality of connecting sides, the plurality of inclined surfaces commonly join at the vertex in a cross-sectional view of the light-emitting device, the vertex being between the top surface of the substrate and the first surface of the active layer, and six of the plurality of patterned units forms a hexagon in the top view of the light-emitting device.


Patent
Epistar Corporation | Date: 2017-02-03

A light source includes a socket connection, a base connected to the socket connection, an LED unit, a mount and a heat conductive material. The socket connection is capable of connecting to a source of electricity. The mount is disposed into the base, and has a top surface on which the LED unit are disposed and a side surface devoid of the LED unit. The heat conductive material directly contacts the LED unit and the side surface of the mount. The heat conductive material enters into a space flanked by the mount and the base and is substantially translucent or transparent such that light emitted from the LED unit is able to pass through the heat conductive material.


Patent
Epistar Corporation | Date: 2017-02-27

A light-emitting device configured to electrically connect to an external circuit and having: a first light-emitting structure; a second light-emitting structure; a first conductive structure having a first connecting pad having a side surface and a top surface connected to the first light-emitting structure and an exposed bottom surface, and a first connecting portion extending away from the side surface without being directly connected to the second light-emitting structure; and a second conductive structure electrically connecting the first light-emitting structure and second light-emitting structure.


Patent
Epistar Corporation | Date: 2017-01-19

The present disclosure provides a light-emitting device, comprising: a light-emitting stack comprising an active layer, wherein the active layer is configured to emit light; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment; and a light-absorbing layer having a first portion surrounding the first semiconductor layer in a top view.


Patent
Epistar Corporation | Date: 2017-02-20

An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer; a first metal layer formed on a top surface of the second semiconductor layer; a second metal layer formed on a top surface of the first semiconductor layer; an insulative layer formed on the top surface of the first semiconductor layer and the top surface of the second semiconductor layer; wherein a space between a sidewall of the first metal layer and a sidewall of the semiconductor stack is less than 3 m.


Patent
Epistar Corporation | Date: 2017-02-21

The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 m; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.


Patent
Epistar Corporation | Date: 2017-01-09

A light-emitting structure includes a first epitaxial unit; a second epitaxial unit disposed next to the first epitaxial unit; a crossover metal layer including a first protruding portion laterally overlapping the first epitaxial unit and the second epitaxial unit wherein the first protruding portion is electrically connected with the first epitaxial unit and the second epitaxial unit; a conductive connecting layer disposed below the first epitaxial unit and the second epitaxial unit and surrounding the first protruding portion; and an electrode arranged on the conductive connecting layer.


Patent
Epistar Corporation | Date: 2017-01-04

A heterostructure device includes a channel layer, a barrier layer disposed on the channel layer, and a first electrode and a second electrode disposed on the barrier layer, respectively. The second electrode includes a p-type semiconductor structure and a raised section disposed on the p-type semiconductor structure, the second electrode includes a Schottky contact and an ohmic contact, the Schottky contact is formed between a top surface of the p-type semiconductor structure and a first bottom surface of the raised section, the ohmic contact is formed between a second bottom surface of the raised section and the barrier layer.


Patent
Epistar Corporation | Date: 2017-01-09

A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.

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