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Hsinchu, Taiwan

Epistar Corp. is the largest manufacturer of light-emitting diodes in Taiwan. The company was established in 1996, and its headquarters are in the Northern Taiwanese city of Hsinchu, In 2009 it had an annual turnover of NT$10 billion.Epistar specialises in high-brightness LED products, which are used in general lighting, traffic signals, and various consumer products such as mobile phones and laptop computers. The company supplies the LED backlighting for Samsung liquid crystal displays.It is the world's largest manufacturer of red and yellow LEDs, and holds over 1000 patents. It has a history of patent disputes with competitor Philips Lumileds over the use of AlInGaP LED technology. However in September, 2009, Philips Lumileds signed an agreement to license AlInGaP technology to Epistar. Wikipedia.


Patent
Epistar Corporation | Date: 2015-07-06

A lamp includes a substrate having a center region and a peripheral region, a first subset of light-emitting devices disposed on the center region, and a second subset of light-emitting devices disposed on the peripheral region. A temperature difference between the center region and the peripheral region is greater than 10 degrees.


Patent
Epistar Corporation | Date: 2015-10-23

This disclosure discloses an illumination apparatus. The illumination apparatus comprises a cover comprising a second portion and a first portion, and a light source disposed within the cover. An average thickness of the first portion is greater than that of the second portion.


Patent
Epistar Corporation | Date: 2015-04-15

The present disclosure provides a method for forming a light-emitting apparatus, comprising providing a carrier having a plurality of first metal contacts; forming a light-emitting structure comprising a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, and a second cladding layer on the active layer; bonding the light-emitting structure to the carrier; forming a cap layer on a side of the light-emitting structure opposite to the carrier; and cutting the carrier and the cap layer to form a chip-scale LED unit.


Patent
Epistar Corporation | Date: 2015-01-12

A light-emitting structure includes a transparent substrate; a first transparent conductive layer formed on the transparent substrate and having a first top surface and a second top surface substantially coplanar with the first top surface; a first light-emitting stack formed on the first top surface; and a first electrode directly formed on the second top surface.


Patent
Epistar Corporation | Date: 2015-01-05

A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first planarization layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.

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