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Nijmegen, Netherlands

Herfst R.W.,NXP Semiconductors | Steeneken P.G.,NXP Semiconductors | Tiggelman M.P.J.,NXP Semiconductors | Tiggelman M.P.J.,ASML Inc | And 2 more authors.
IEEE Transactions on Semiconductor Manufacturing | Year: 2012

We present a fast radio frequency-capacitance-voltage (RF-CV) method to measure the CV relation of an electronic device. The approach is more accurate, much faster, and more cost effective compared to the existing off-the-shelf solutions. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. We introduce a new way to correct for nonlinearities of the used components, which greatly increases the accuracy with which the phase and magnitude of the reflected signal is measured. The measurement technique is validated on an RF microelectromechanical systems capacitive switch and a barium-strontium-titanate tunable capacitor. Complete CV curves are measured in less than a millisecond, with a measurement accuracy well below 1%. © 1988-2012 IEEE. Source


Wang J.,MESA Institute for Nanotechnology | Bielen J.,EPCOS Netherlands BV | Salm C.,MESA Institute for Nanotechnology | Schmitz J.,MESA Institute for Nanotechnology
IEEE International Conference on Microelectronic Test Structures | Year: 2016

In this article we compare three approaches to measure the spring constant in RF MEMS capacitive switches. We use the lowest vibration mode, as obtained from vibrometry; the pull-in voltage; and the low-field capacitance-voltage curve of the device to extract the spring constant. Experimental results are presented for each approach, and FEM model predictions are used to further verify and interpret the findings. Pros and cons of each method are discussed. © 2016 IEEE. Source


Erturk I.,TU Eindhoven | Gao K.,TU Eindhoven | Bielen J.,EPCOS Netherlands BV | Van Dommelen J.A.W.,TU Eindhoven | Geers M.G.D.,TU Eindhoven
GAMM Mitteilungen | Year: 2013

The micro and sub-micro scale dimensions of the components of modern high-tech products pose challenging engineering problems that require advanced tools to tackle them. An example hereof is time dependent strain recovery, here referred to as anelasticity, which is observed in metallic thin film components of RF-MEMS switches. Moreover, it is now well known that the properties of a thin film material strongly depend on its geometrical dimensions through so-called size effects. A strain gradient crystal plasticity formulation (SGCP) was recently proposed [1-4], involving a back stress in terms of strain gradients capturing the lattice curvature effect. In the present work, the SGCP model is used in a realistic simulation of electrostatic bending of a free standing thin film beam made of either a pure fcc metal or a particle strengthened Al-Cu alloy. The model capabilities to describe the anelastic and plastic behavior of metallic thin films in comparison with experimentally available data are thereby assessed. Simulation results show that the SGCP model is able to predict a macroscopic strain recovery over time following the load removal. The amount of the anelastic relaxation and the accompanying relaxation times result from the rate dependent modeling approach, the basis of which is phenomenological only. The SGCP model is not fully capable of describing the permanent deformations in an alloy thin beam as observed in electrostatic experiments. Hence, to incorporate realistic time constants and the influence of the microstructure into the mechanical behavior of the thin film material, an improved constitutive law for crystallographic slip is necessary within the SGCP formulation. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Van Bezooijen A.,EPCOS Netherlands BV | De Jongh M.A.,EPCOS Netherlands BV | Van Straten F.,NXP Semiconductors | Mahmoudi R.,TU Eindhoven | Van Roermund A.H.M.,TU Eindhoven
IEEE Transactions on Circuits and Systems I: Regular Papers | Year: 2010

The link quality of mobile phones suffers from antenna mismatch due to fluctuating body effects. Techniques for adaptive control of impedance-matching L networks are presented, which provide automatic compensation of antenna mismatch. To secure reliable convergence, a cascade of two control loops is proposed for independent control of the real and imaginary parts of impedance. A secondary feedback path is used to enforce operation into a stable region when needed. These techniques exploit the basic properties of tunable series and parallel LC networks. A generic quadrature detector that offers a power-independent orthogonal reading of the complex impedance value is presented, which is used for direct control of variable capacitors. This approach renders calibration and elaborate software computation superfluous and allows for autonomous operation of adaptive antenna-matching modules. © 2006 IEEE. Source


Herfst R.W.,EPCOS Netherlands BV | Herfst R.W.,MESA Institute for Nanotechnology | Steeneken P.G.,NXP Semiconductors | Tiggelman M.P.J.,MESA Institute for Nanotechnology | And 2 more authors.
IEEE International Conference on Microelectronic Test Structures | Year: 2010

We present a novel method to measure the capacitance-voltage relation of an electronic device. The approach is accurate, very fast, and cost-effective compared to the existing off-the-shelf solutions. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. We introduce a new way to correct for non-linearities of the used components, which greatly increases the accuracy with which the phase and magnitude of the reflected signal is measured. The measurement technique is validated on an RF-MEMS capacitive switch and a BST tunable capacitor. Complete capacitance-voltage curves are measured in less than a millisecond, with a measurement accuracy well below 1%. ©2010 IEEE. Source

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