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Ma X.,China Agricultural University | Ma X.,Yunnan Normal University | Liu Z.-M.,Yunnan Normal University | Qu S.,Eoplly New Energy Technology Co. | And 3 more authors.
Chinese Physics Letters | Year: 2011

A new method to measure trap characteristics in crystalline silicon solar cells is presented. Important parameters of traps including energy level, total concentration of trapping centers and capture cross-section ratio of hole to electron are deduced using the Shockley - Read - Hall theory of crystalline silicon solar cells in base region. Based on the as-deduced model, these important parameters of traps are determined by measuring open-circuit voltages of silicon solar cells under monochromatic illumination in the wavelength range 500-1050 nm with and without bias light. The effects of wavelength and intensity of bias light on the measurement results are also discussed. The measurement system used in our experiments is very similar to a quantum efficiency test system which is commercially available. Therefore, our method is very convenient and valuable for detecting deep level traps in crystalline silicon solar cells. © 2011 Chinese Physical Society and IOP Publishing Ltd.


Shi M.,Soochow University of China | Yang J.,Soochow University of China | Yang J.,Eoplly New Energy Technology Co Ltd | Li Z.,Harbin Institute of Technology | And 3 more authors.
Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams | Year: 2013

A novel single-shot method for the investigation of surface nonlinearity in materials with limited transparency is demonstrated. When a circular disk that blocks the beam is placed in the beam path before the detector in the conventional reflection 4F coherent imaging system, the surface nonlinear optical response of the sample can be determined by measuring the normalized reflectance under different conditions. The theoretical principle of the method is presented in detail and the influences of incidence-angle variation on the measurement sensitivity are analyzed using numerical simulation. This approach allows for sensitivity enhancement, one-laser-shot detection, determination of the nonlinear absorption coefficient and nonlinear refractive index simultaneously. The results show that the measurement sensitivity of this novel technique is two orders of magnitude larger than that of the original reflection Z-scan technique under the same condition.


Tang Y.,CAS Institute of Electrical Engineering | Tang Y.,University of Chinese Academy of Sciences | Zhou C.,CAS Institute of Electrical Engineering | Wang W.,CAS Institute of Electrical Engineering | And 6 more authors.
Solar Energy | Year: 2013

Phosphorous diffusion is typically derived from three sources: phosphorus oxychloride (POCl3), sprayable phosphoric acid (H3PO4), and printable dopant phosphorous paste. Aside from being costly, these sources tend to be harmful and can facilitate bulk contamination. Ammonium Dihydrogen Phosphate (NH4H2PO4:ADP) can be used in the application of doping substrate for phosphorous diffusion, which is originally introduced in this paper. ADP doping, supported by the spin-on technique, has sufficient potential to mitigate the disadvantages of other phosphorous sources. The applicability and compatibility of ADP as a phosphorous doping source in the production of silicon solar cells were demonstrated in this paper. Sheet resistance mapping shows that ADP doping generated a uniform N+ emitter. The ADP solution concentration and diffusion temperature influenced the phosphorous dopant profile and sheet resistance. The adjustment of the concentration and temperature enables the control of the phosphorous dopant profile and sheet resistance. Full aluminum back-surface field silicon solar cells with an ADP-diffused N+ emitter were realized in this paper through screen-printed front and back contacts on 154.8cm2, 180μm thick, and 1.5-3Ωcm p-type Cz-Si wafers. The highest confirmed efficiency of the investigated cells was 17.97% with an open circuit voltage of 628.40mV, short circuit current density of 36.43mA/cm2, and fill factor of 78.47%. The average efficiency (10 cells) was 17.70%, which also verified the uniformity of the ADP-diffused N+ emitter. Selective emitter solar cells with the best efficiency of 18.41% were thus fabricated. © 2013.


Wang W.,Nanjing University of Aeronautics and Astronautics | Shen H.-L.,Nanjing University of Aeronautics and Astronautics | Jin J.-L.,Nanjing University of Aeronautics and Astronautics | Li J.-Z.,Nanjing University of Aeronautics and Astronautics | Ma Y.,Eoplly New Energy Technology Co.
Chinese Physics B | Year: 2015

Zn/Sn/Cu (CZT) stacks were prepared by RF magnetron sputtering. The stacks were pretreated at different temperatures (200 °C, 300 °C, 350 °C, and 400 °C) for 0.5 h and then followed by sulfurization at 500 °C for 2 h. Then, the structures, morphologies, and optical properties of the as-obtained Cu2ZnSnS4 (CZTS) films were studied by x-ray diffraction (XRD), Raman spectroscopy, UV-Vis-NIR, scanning electron microscope (SEM), and energy-dispersive x-ray spectroscopy (EDX). The XRD and Raman spectroscopy results indicated that the sample pretreated at 350 °C had no secondary phase and good crystallization. At the same time, SEM confirmed that it had large and dense grains. According to the UV-Vis-NIR spectrum, the sample had an absorption coefficient larger than 104 cm-1 in the visible light range and a band gap close to 1.5 eV. © 2015 Chinese Physical Society and IOP Publishing Ltd.


Zhou C.,CAS Institute of Electrical Engineering | Zhu J.,Institute for Energy Technology of Norway | Zhou S.,CAS Institute of Electrical Engineering | Tang Y.,Eoplly New Energy Technology Co. | And 5 more authors.
Progress in Photovoltaics: Research and Applications | Year: 2016

A thin SiOyNx film was inserted below a conventional SiNx antireflection coating used in c-Si solar cells in order to improve the surface passivation and the solar cell's resistance to potential-induced degradation (PID). The effect of varying the flow ratio of the N2O and SiH4 precursors and the deposition temperature for the SiOyNx thin film upon material properties were systematically investigated. An excellent surface passivation was obtained on FZ p-type polished silicon wafers, with the best results obtained with a SiOyNx film deposited at a very low temperature of 130°C and with an optical refractive index of 1.8. In the SiOyNx/SiNx stack structure, a SiOyNx film with ~6nm thickness is sufficient to provide excellent surface passivation with an effective surface recombination velocity Seff<2cm/s. Furthermore, we applied the optimized SiOyNx/SiNx stack on multicrystalline Si solar cells as a surface passivation and antireflection coating, resulting in a 0.5% absolute average conversion efficiency gain compared with that of reference cells with conventional SiNx coating. Moreover, the cells with the SiOyNx/SiNx stack layers show a significant increase in their resistance to PID. Nearly zero degradation in shunt resistance was obtained after 24h in a PID test, while a single SiNx-coated silicon solar cell showed almost 50% degradation after 24h. © 2016 John Wiley & Sons, Ltd.


Jia X.,CAS Institute of Electrical Engineering | Zhou C.,CAS Institute of Electrical Engineering | Tang Y.,Eoplly New Energy Technology Co. | Wang W.,CAS Institute of Electrical Engineering
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 | Year: 2015

The SiOx(C)/SiNx dual-layer shows a better anti-reflection coating compared with standard SiNx films, after deposition and annealing. In this paper, the effect of film thickness, sintering peak temperature, belt speed, etc. on the anti- reflectance of SiOx(C) film were discussed. Under optimized condition, the weighted reflectance of SiOx(C)/SiNx dual-layer obtained 1.25% reduction; the efficiency of solar cell rises 0.35%. Sixty solar cells with dual-layer encapsulated modules gained 0.5 W larger power as well as better light stability than the ones with SiNx single layer. © 2015 IEEE.


Gao Y.,CAS Institute of Semiconductors | Zhang X.W.,CAS Institute of Semiconductors | Yin Z.G.,CAS Institute of Semiconductors | Si F.T.,CAS Institute of Semiconductors | And 5 more authors.
Journal of Applied Physics | Year: 2011

FePt nanoparticles were self-assembled on a MgO (001) substrate by a micellar method. We introduced an Au buffer layer to control the lattice orientation and the magnetic alignment of FePt nanoparticles. A distinct c-axis preferred orientation of the FePt nanoparticles was achieved during the thermal annealing treatment. The driving force of lattice reorientation is considered to be the result of the stress caused by the lattice misfit between Au and FePt. The degree of c-axis orientation is significantly enhanced with increasing Au thickness, which is attributed to the decrease of the in-plane lattice and the improved crystal quality of the Au layer. Perpendicular magnetic anisotropy was observed for the FePt samples with the Au buffer layer. The out-of-plane coercivity and remanence ratio are 3.1 kOe and 0.8, respectively, which far exceed the in-plane values. © 2011 American Institute of Physics.


Zhang S.G.,CAS Institute of Semiconductors | Zhang X.W.,CAS Institute of Semiconductors | Yin Z.G.,CAS Institute of Semiconductors | Wang J.X.,CAS Institute of Semiconductors | And 8 more authors.
Journal of Applied Physics | Year: 2011

The effects of the growth temperature and thickness of AlN layer on the electroluminescence (EL) performance of n-ZnO/AlN/p-GaN devices have been systematically investigated. It is found that the higher growth temperature of AlN layer (TAlN) may facilitate the improvement of EL performance of the device, which is attributed to that the crystalline quality of AlN layer improves with increasing growth temperatures TAlN. Besides the crystallinity of AlN layer, the thickness of AlN barrier layer plays an important role on the performance of the device. The thinner AlN layer is not enough to cover the whole surface of GaN, while the thicker AlN layer is unfavorable to the tunneling of carriers and many of electrons will be captured and recombined nonradiatively via the deep donors within the thick AlN layer. We have demonstrated that the AlN layer at the growth temperature of 700° with an optimized thickness of around 10 nm could effectively confine the injected carriers and suppress the formation of interfacial layer, thus, the EL performance of n-ZnO/AlN/p-GaN device could be significantly improved. © 2011 American Institute of Physics.


Trademark
Eoplly New Energy Technology Co. | Date: 2010-01-04

Monocrystalline silicon; epitaxial wafers of silicon; polycrystalline silicon; printed circuits; integrated circuits; semiconductor device; galvanic cells; inverters; electric accumulators; solar batteries.


Trademark
Eoplly New Energy Technology Co. | Date: 2011-10-04

Solar cells; batteries; accumulator jars; batteries for lighting; battery boxes; high-tension batteries; battery chargers; galvanic cells; battery plates; accumulator boxes.

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