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Billerica, MA, United States

Entegris, Inc. NASDAQ: ENTG is a leading provider of yield-enhancing materials and solutions for the most advanced manufacturing environments. Entegris’ customers include the world’s manufacturers of semiconductors and other electronics, as well their materials and equipment suppliers. Entegris operates out of its headquarters in Billerica, Mass. The company has about 3,500 employees in manufacturing, service center and research facilities in the United States, Malaysia, Singapore, Taiwan, China, Korea, Japan, Israel, Ireland, Germany and France.The company seeks to help manufacturers increase their yields by improving contamination control in several key processes, including photolithography, wet etching & cleaning, chemical-mechanical planarization, thin-film deposition, bulk chemical processing, wafer and reticle handling and shipping, and testing, assembly and packaging. Approximately 80% of the Company's products are used in the semiconductor industry.Manufacturing semiconductors is incredibly complex and requires levels of purity that are more stringent than any other industry. Entegris’ solutions help achieve these purity levels by protecting critical manufacturing materials from contaminants that are so small they are measured in width of atoms. In recent years, contamination control has become increasingly more difficult as semiconductor manufacturers drive their sub-20nm technology applications. At the same time these manufacturers are experiencing incredible pressure to increase productivity in the fab and stay cost competitive. As a result, companies are making the move to invest in technology that increases yields by minimizing product defects caused by contamination. Wikipedia.

In an attempt to better understand the repellency of the lotus leaf, a model was constructed from hydrophobic hemispheres arranged on a hexagonal array. Two scenarios were considered. In the first, the hemispheres were smooth. In the second, the hemispheres had a secondary roughness. The model shows that, without the secondary structure, the repellency of this surface geometry is relatively poor. The secondary structure directs the surface tension upward, allowing much greater resistance to penetration of water and prevents the loss of repellency. From the proposed model, the maximum intrusion pressure (or so-called Cassie-Wenzel transition) of the lotus leaf is estimated to be 12-15 kPa. The predicted maximum pressure agrees well with reported values from experimental measurements. © 2011 American Chemical Society. Source

Entegris | Date: 2015-08-12

A purifier for removing metal, such as chromium, from an organic solvent is disclosed. The purifier comprises a housing having a fluid inlet and a fluid outlet in fluid communication with the fluid inlet; a volume of ion-exchange resin disposed within the housing downstream of the fluid inlet; and a filtration member downstream of the volume of ion-exchange resin, the filtration member comprising at least one microporous membrane having a substantially neutral surface and a microporous polytetrafluoroethylene membrane downstream of the at least one microporous membrane. A method for removing metal, including chromium, from an organic solvent using a purifier of the invention is also disclosed.

Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of

A fluid storage and dispensing apparatus including a fluid storage and dispensing vessel having a rectangular parallelepiped shape, and an integrated gas cabinet assembly including such fluid storage and dispensing apparatus and/or a point-of-use ventilation gas scrubber in the vented gas cabinet. By the use of physical adsorbent and chemical sorbent media, the gas cabinet can be enhanced in safety of operation, e.g., where the process gas supplied from the gas cabinet is of a toxic or otherwise hazardous character.

Apparatus and method for determining endpoint of a fluid supply vessel in which fluid flow is controlled through a flow passage disposed in an interior volume of the fluid supply vessel with a static flow restricting device and a selectively actuatable valve element upon establishing fluid flow. The endpoint determination can be employed to terminate fluid supply from the fluid supply vessel and/or to switch from a fluid-depleted supply vessel to a fresh vessel for continuity or renewal of fluid supply operation. The apparatus and method are suitable for use with fluid-utilizing apparatus such as ion implanters.

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