Kho R.,Robert Bosch GmbH |
Boursin D.,Qimonda AG |
Brox M.,Elpida Memory Europe GmbH |
Gregorius P.,Infineon Technologies |
And 21 more authors.
IEEE Journal of Solid-State Circuits | Year: 2010
Modern graphics subsystems (gaming PCs, midhigh end graphics cards, game consoles) have reached the 2.6-2.8 Gb/s/pin regime with GDDR3/GDDR4, and experimental work has shown per pin rates up to 6 Gb/s/pin on individual test setups. In order to satisfy the continuous demand for even higher data bandwidths and increased memory densities, more advanced design techniques are required. This paper describes a 7 Gb/s/pin 1 Gb GDDR5 DRAM and the circuit design and optimization features employed to achieve these speeds. These features include: an array architecture for fast column access, a command-FIFO designed to take advantage of special training/tracking requirements of the GDDR5 interface, a boosting transmitter to increase read eye height, sampling receivers with pre-amplification and offset control, multiple regulated internal voltage (VINT = 1.3 V) domains to control on chip power noise, and a high-speed internal VINT power generator system. The memory device was fabricated in a conventional 75 nm DRAM process and characterized for a 7 Gb/s/pin data transfer rate at 1.5 V Vext. © 2009 IEEE.