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Ioisher A.M.,Research Institute ELIRI | Aleinicov E.A.,Research Institute ELIRI | Badinter E.Ya.,Research Institute ELIRI | Leporda N.I.,Moldova Academy of Sciences | And 2 more authors.
Proceedings of the International Semiconductor Conference, CAS | Year: 2012

We investigate the possibility of revealing the magneto-concentration, particularly the galvano-magneto-recombination (GMR) effect in semiconductor filiform micro- and nano-strurcures (FMS u FNS). These structures represent isolated from each other micro- and nano-wires in glass envelope with the core from a semiconductor material. Different rates of charge carrier surface recombination rates are realized at diametrically opposed surfaces of cores. This difference assure conditions for the emergence of the GMR effect on segments of such FMS and FNS placed in a transversal magnetic field which leads to the change of the sample resistance proportionally to the intensity of the magnetic field. © 2012 IEEE. Source

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