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Saint Petersburg, Russia

Petrunov A.N.,Elfolum Ltd. | Podoskin A.A.,Elfolum Ltd. | Shashkin I.S.,Elfolum Ltd. | Slipchenko S.O.,RAS Ioffe Physical - Technical Institute | And 8 more authors.
Semiconductors | Year: 2010

Asymmetric heterostructures with an ultrathick waveguide based on an AlGaAs/GaAs alloy system that allow lasing at a wavelength of 905 nm have been developed and fabricated by hydride metalorganic vapor-phase epitaxy. The internal optical loss and internal quantum efficiency of semiconductor lasers based on such structures were 0.7 cm -1 and 97%, respectively. It is shown that the highest output optical power of laser diodes with antireflecting (SiO 2) and reflecting (Si/SiO 2) coatings deposited on untreated Fabry-Perot cavity facets obtained by cleaving in an oxygen atmosphere reached 67 W in the pulsed mode and is limited by mirror damage. Treatment of Fabry-Perot cavity facets by etching in argon plasma and the formation of coatings with passivating and oxygen-blocking GaN and Si 3N 4 layers allowed an increase in the maximum output optical power to 120 W. Mirror damage was not observed at the attained output optical power. © 2010 Pleiades Publishing, Ltd. Source

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