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Mito S.,Toyohashi University of Technology | Sakurai H.,Toyohashi University of Technology | Takagi H.,Toyohashi University of Technology | Baryshev A.V.,Electronics Inspired Interdisciplinary Research Institute | And 2 more authors.
Journal of Applied Physics | Year: 2012

We have investigated the magnetization process of the polycrystalline magnetic garnet films in order to determine the most suitable composition of garnet films for piezoelectrically-driven magneto-optic spatial light modulators (MOSLMs). For experiment, the bismuth-dysprosium-aluminum-substituted yttrium iron (Bi 1.3Dy 0.7Y 1.0Fe 3.1Al 1.9O 12) garnet films were deposited by an RF magnetron sputter and annealed at 700°C in air. The annealing time was varied in a range of several minutes to control the grain size. The saturation magnetization, the remanent magnetization and the composition of the fabricated garnet films slightly changed versus the annealing time. Experiments showed that the coercivity and the grain size increased at longer annealing; the coercivity was larger for films with bigger grains. This work shows that garnet films with smaller coercivity are most suitable for controlling the magnetization of garnet and, correspondingly, the magneto-optical rotation of MOSLM pixels driven by piezoelectrics. © 2012 American Institute of Physics. Source

Baek S.,Toyohashi University of Technology | Baryshev A.V.,Electronics Inspired Interdisciplinary Research Institute | Baryshev A.V.,RAS Ioffe Physical - Technical Institute | Inoue M.,Toyohashi University of Technology
Journal of Applied Physics | Year: 2012

Magneto-optical phenomena in quasi two-dimensional magnetophotonic crystals (Q-2D MPCs) have been investigated experimentally and numerically. Multiple Bragg diffraction was shown to be responsible for enhancement of the Faraday rotation and for alteration of its sign in spectra of experimental samples fabricated from bismuth-substituted yttrium iron garnet. It was shown that, for the magnetic superprism effect-control of the light propagation direction by the external magnetic, materials with much larger magneto-optical activity than that of experimental samples are necessary. Spectra obtained by numerical simulations were in a good agreement with experimental ones. Magnetic superprism effect was demonstrated for model samples and parameters necessary for alteration flow of light in quasi-2D MPCs were obtained. © 2012 American Institute of Physics. Source

Oishi K.,Toyohashi University of Technology | Akai D.,Electronics Inspired Interdisciplinary Research Institute | Ishida M.,Toyohashi University of Technology | Ishida M.,Electronics Inspired Interdisciplinary Research Institute
Solid-State Electronics | Year: 2014

In this paper, integration of crystalline orientated γ-Al2O3 films and complementary metal-oxide-semiconductor (CMOS) circuits on Si(1 0 0) substrate was reported. In this integration processes, crystalline γ-Al2O3 films need to be preserved their crystallinity during high temperature annealing processes of CMOS fabrication in order to prevent surface condition changes. The γ-Al2O3 films grown on Si substrates are annealed in the CMOS fabrication process conditions, drive-in annealing at 1150 °C in O2 atmosphere and wet annealing 1000 °C in H2O vapor atmosphere. Reflection high energy electron diffraction (RHEED) and x-ray diffraction (XRD) were used to characterize the crystallinity of γ-Al2O3 films after the annealing processes. Surface conditions of the films are analyzed and observed with X-ray photoelectron spectroscopy (XPS) and scanning electron microscope (SEM). As a result, RHEED patterns of the γ-Al2O3 films indicated that wet oxidation annealing was a critical process severally inferior surface condition of crystalline γ-Al2O3 films. XRD, XPS, and SEM investigation unveiled further details of the crystallinity changes on γ-Al2O3 films for each process. These results indicated passivation films were required to integrate γ-Al2O3 films with CMOS fabrication process. Therefore we proposed and introduced Si3N4/TEOS passivation films on γ-Al2O3 films in CMOS fabrication processes. At last, MOSFETs on γ-Al2O3 integrated Si(1 0 0) substrate were fabricated and characterized. The designed characteristics of MOSFETs were obtained on γ-Al2O3 integrated Si substrate. © 2014 Elsevier Ltd. All rights reserved. Source

Takahashi S.,Toyohashi University of Technology | Futagawa M.,University of Shizuoka | Ishida M.,Toyohashi University of Technology | Ishida M.,Electronics Inspired Interdisciplinary Research Institute | And 2 more authors.
IEICE Transactions on Electronics | Year: 2016

Because redox sensors can detect multi-ions and the concentration within a single sensing area using current and potential signals, they have been studied for chemical analysis applications. A small sensing area and a low concentration measurement typically reduce the output current of a redox sensor. Therefore, we previously fabricated the Amplified Redox Sensor, which has a working electrode combined with a bipolar transistor to amplify a small current signal. However, the current gain of the bipolar transistor had been changed by the redox current because the redox current flows in the base terminal of the bipolar transistor. In this study, we propose a new measurement method in which an offset current is inserted along with the redox current in the base terminal. The proposed measurement method can detect potassium ferricyanide (K3[Fe (CN)6]) concentrations as low as 1 μM using the Square Wave Voltammetry method. © Copyright 2016 The Institute of Electronics, Information and Communication Engineers. Source

Nakazawa H.,Toyohashi University of Technology | Nakazawa H.,Japan Society for the Promotion of Science | Ishida M.,Toyohashi University of Technology | Ishida M.,Electronics Inspired Interdisciplinary Research Institute | And 3 more authors.
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 | Year: 2011

A multimodal bio-image sensor for proton (pH, power of Hydrogen) and filter-less fluorescence imaging is developed, and its prototype has been fabricated using CMOS silicon integrated circuit technology. Both pH and fluorescence images were successfully obtained without optical filters or gratings and simultaneously in the same area in real time using the developed image sensor for the first time. In the developed device, a pH sensor which uses CCD image sensor technology and a filter-less fluorescence detection sensor are fused in the same pixel. © 2011 IEEE. Source

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