Entity

Time filter

Source Type

Daejeon, South Korea

The Electronics and Telecommunications Research Institute, Korea is a government-backed research institute in Daedeok Science Town in Daejeon, Republic of Korea. As of 2008, ETRI has about 3000 employees where about 2000 of them are researchers. Wikipedia.


Kim J.T.,Electronics and Telecommunications Research Institute
Optics Letters | Year: 2014

To extend the application of an emerging plasmonic material, vanadium dioxide (VO2), in silicon photonics technology, we propose a complementary metal-oxide-semiconductor (CMOS)-compatible hybrid plasmonic modulator using an VO2 insulator-metal phase transition. The optical device is based on a directional coupler that consists of a Si waveguide and a Si - SiO2 - VO2 - SiO2 - Si hybrid plasmonic waveguide. By electrically triggering the phase of VO2 with a driving voltage of 2 V, the propagation loss of the hybrid plasmonic waveguide is switched, and hence the output optical power is modulated. The on/off extinction ratio is larger than 3.0 dB on the entire C-band. © 2014 Optical Society of America. Source


Kim J.T.,Electronics and Telecommunications Research Institute
Journal of Lightwave Technology | Year: 2014

To achieve intra-chip three-dimensional (3-D) integration of silicon photonic circuits, we design a polarization beam splitter based on complementary metal-oxide-semiconductor (CMOS) platform. With the aid of the polarization-dependent nature of the center waveguide in a three-port directional coupler, the device separates the TM-and TE-polarization modes onto different layers of 3-D silicon photonic circuits. Numerical simulations with a full vectorial beam propagation method exhibit that we can obtain a 10 μm-long polarization splitter with extinction ratio better than 20 dB on the entire C-band. The optical device without the vertical offset can serve as a horizontal polarization splitter with nearly the same optical characteristics. We conclude that the proposed polarization beam splitter is compatible not only with the CMOS structure but also with the CMOS fabrication process. © 2014 IEEE. Source


Aggarwal J.K.,University of Texas at Austin | Ryoo M.S.,University of Texas at Austin | Ryoo M.S.,Electronics and Telecommunications Research Institute
ACM Computing Surveys | Year: 2011

Human activity recognition is an important area of computer vision research. Its applications include surveillance systems, patient monitoring systems, and a variety of systems that involve interactions between persons and electronic devices such as human-computer interfaces. Most of these applications require an automated recognition of high-level activities, composed of multiple simple (or atomic) actions of persons. This article provides a detailed overview of various state-of-the-art research papers on human activity recognition. We discuss both the methodologies developed for simple human actions and those for high-level activities. An approach-based taxonomy is chosen that compares the advantages and limitations of each approach. Recognition methodologies for an analysis of the simple actions of a single person are first presented in the article. Space-time volume approaches and sequential approaches that represent and recognize activities directly from input images are discussed. Next, hierarchical recognition methodologies for high-level activities are presented and compared. Statistical approaches, syntactic approaches, and description-based approaches for hierarchical recognition are discussed in the article. In addition, we further discuss the papers on the recognition of human-object interactions and group activities. Public datasets designed for the evaluation of the recognition methodologies are illustrated in our article as well, comparing the methodologies' performances. This review will provide the impetus for future research in more productive areas. © 2011 ACM. Source


Kim J.T.,Electronics and Telecommunications Research Institute
IEEE Photonics Technology Letters | Year: 2011

For development of complementary metal-oxide-semiconductor (CMOS)-compatible plasmonic waveguides, a microstrip-based hybrid surface plasmonic waveguide is proposed and the characteristics of its guided subwavelength hybrid modes are investigated by the finite-element method. The multiple dielectric layers with a high refractive index contrast provide subwavelength confinement of light. The guided mode is like a combination of a surface plasmon polariton mode and a dielectric slab mode. The field intensity of the guided hybrid mode is confined more in the core layer. Thus, the propagation loss is significantly reduced. The proposed hybrid surface plasmonic waveguide can be exploited for on-chip integration of Si-based electronic circuits and planar lightwave circuits. © 2006 IEEE. Source


Kim J.T.,Electronics and Telecommunications Research Institute
IEEE Photonics Technology Letters | Year: 2011

For development of on-chip photonic circuits, a complementary metal-oxide-semiconductor (CMOS)-compatible hybrid plasmonic slot waveguide is proposed. The characteristics of its guided hybrid modes at a wavelength of 1.55 μm are investigated by the finite-element method. The combination of a Si gate and metallic features of a CMOS electronic device provides both subwavelength light confinement and long propagation length with high power intensity. The characteristics of the guided hybrid mode are improved by optimizing the configurations of the Si core. The proposed hybrid plasmonic slot waveguide is compatible not only with the silicon electronics fabrication processes but also with the metallic features of CMOS electronic devices. © 2011 IEEE. Source

Discover hidden collaborations