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Cardoza D.,Electronics and Photonics Laboratory | Lalumondiere S.D.,Electronics and Photonics Laboratory | Tockstein M.A.,United Microelectronics | Brewe D.L.,Argonne National Laboratory | And 5 more authors.
IEEE Transactions on Nuclear Science | Year: 2014

We report an experimental study of the transients generated by pulsed X-rays, heavy ions, and different laser wavelengths in a Si p-i-n photodiode. We compare the charge collected by all of the excitation methods to determine the equivalent LET for pulsed X-rays relative to heavy ions. Our comparisons show that pulsed X-rays from synchrotron sources can generate a large range of equivalent LET and generate transients similar to those excited by laser pulses and heavy ion strikes. We also look at how the pulse width of the transients changes for the different excitation methods. We show that the charge collected with pulsed X-rays is greater than expected as the X-ray photon energy increases. Combined with their capability of focusing to small spot sizes and of penetrating metallization, pulsed X-rays are a promising new tool for high resolution screening of SEE susceptibility. © 1963-2012 IEEE. Source


Cardoza D.M.,Electronics and Photonics Laboratory | Lalumondiere S.D.,Electronics and Photonics Laboratory | Tockstein M.A.,United Microelectronics | Witczak S.C.,United Microelectronics | And 4 more authors.
IEEE Transactions on Nuclear Science | Year: 2012

We perform measurements which show that focused, picosecond pulses of X-rays can be used to generate single event transients (SET) in a GaAs heterostructure field effect transistor (HFET) and a GaN high electron mobility transistor. X-ray pulses with photon energies of 8, 10 and 12 keV from the Advanced Photon Source at Argonne National Laboratory were used to excite transients. SETs are observed when X-ray pulses are incident upon metal layers above sensitive areas on the transistors. We use focused ion beam (FIB) cross-sectioning and scanning transmission electron microscopy energy dispersive X-ray spectroscopy (STEM-EDXS) to determine the compositional structure of the devices. We present a first order analysis of energy deposition in the devices and correlate it to the transient response to make preliminary interpretations of the results. We compare the X-ray transients from the GaAs HFET with transients generated by 750 nm and 870 nm femtosecond laser pulses. We also present results on the total dose susceptibility of the GaN HEMTs. © 1963-2012 IEEE. Source

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