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Garcia-Moreno E.,Electronic Engineering Group | Isern E.,Electronic Engineering Group | Roca M.,Electronic Engineering Group | Picos R.,Electronic Engineering Group | And 3 more authors.
IEEE Transactions on Nuclear Science | Year: 2013

This paper presents an improved version of our previous gamma radiation sensor based on a floating gate MOSFET whose output current is changed by the total ionizing dose. Both versions exhibit zero bias operation and reprogramming capabilities. They have been designed in a standard CMOS technology, require little silicon area, and exhibit low power consumption. Sensitivity to radiation dose is {-}11.4\ \mu A/krad, dose range over 3.6 krad, and lowest detectable dose lower than 2 rad. The new version features much higher linearity and supply voltage rejection and much lower sensitivity to ambient temperature. © 1963-2012 IEEE.

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