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Peng C.,CAS Shanghai Institute of Microsystem and Information Technology | Hu Z.,CAS Shanghai Institute of Microsystem and Information Technology | Ning B.,CAS Shanghai Institute of Microsystem and Information Technology | Huang H.,CAS Shanghai Institute of Microsystem and Information Technology | And 4 more authors.
IEEE Electron Device Letters | Year: 2014

The tolerance of partially depleted (PD) silicon-on-insulator nMOSFETs to total-ionizing-dose-induced trapped charge in the buried oxide is investigated. The radiation-induced coupling effect due to the metamorphosis of PD device into a fully depleted one is observed. The coupling effect is responsible for the negative threshold voltage shift, enhanced drain-induced barrier lowering effect, subthreshold slope increase, and transconductance variation in the front channel device. The back channel implantation is introduced as an effective way to suppress the radiation-induced coupling effect. © 1980-2012 IEEE. Source


Lu G.-G.,Fifth Research Institute | Lu G.-G.,Electronic Component Laboratory | Hao M.-M.,Fifth Research Institute | Hao M.-M.,Electronic Component Laboratory | And 4 more authors.
2015 12th China International Forum on Solid State Lighting, SSLCHINA 2015 | Year: 2015

We showed a detailed thermal simulation of a high power flip-chip packaged LED, simulation results show that the junction temperature of the LED is more sensitive to the adhesive layer material between the Si substrate and the 1000μm thick Cu heatsink, and less sensitive to the bonding ball material and the heatsink material. Furthermore, three groups of aging tests were conducted on this type of high power flip chip LED, according to the linear regression analysis, the extrapolated lifetime of the high power flip chip LED at 25°C is 37718 hours, we also obtain an acceleration factor 70.5 of resulting in a thermal activation energy of Ea=0.35eV using Arrhenius function. © 2015 IEEE. Source


Chen Y.Q.,Electronic Component Laboratory | Xu X.B.,Electronic Component Laboratory | Lei Z.F.,Electronic Component Laboratory | Zeng C.,Electronic Component Laboratory | And 4 more authors.
IEEE Electron Device Letters | Year: 2015

Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with SrBi2Ta2O9 as a ferroelectric layer and HfTaO as an insulator layer were fabricated, and the electrical properties were investigated before and after the hydrogen treatment. The size of memory window for the MFIS capacitors seriously decreases and even vanishes. This could be attributed to the diffusion of hydrogen ions into the ferroelectric layer, which leads to the degradation of coercive field for ferroelectric layer. Moreover, it was found that the leakage current density of the MFIS increases as much as one order of magnitude after the hydrogen treatment, which could be attributed to the electrons produced by the ionized of oxygen vacancy and H atoms. The results could provide useful guidelines for the design and application of ferroelectric memory. © 2015 IEEE. Source

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