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Nagoya-shi, Japan

Aoyama K.,Meijo University | Suzuki A.,El seed | Kitano T.,El seed | Kamiyama S.,Meijo University | And 4 more authors.
Japanese Journal of Applied Physics | Year: 2013

The Shockley-Read-Hall (SRH) model was applied to the determination of photoluminescence (PL) and electroluminescence (EL) characteristics. From the ratio of the internal quantum efficiency (IQE) obtained from the PL and EL intensities, the carrier injection efficiencies (CIE) for 405nm LEDs were derived. All the efficiency components including the IQE, CIE, and light extraction efficiency for 405nm LEDs were obtained for various structural parameters by fitting the experimental data to theoretical equations of the SRH model. © 2013 The Japan Society of Applied Physics. Source

Umeda S.,Meijo University | Kato T.,Meijo University | Kitano T.,El seed | Kondo T.,El seed | And 6 more authors.
Japanese Journal of Applied Physics | Year: 2013

The use of nanocolumn crystals is thought to be effective in producing a low-dislocation-density GaN layers. In this paper, we propose a metal- organic vapor phase epitaxial (MOVPE) growth method for producing uniform GaN nanocolumns using deep through-holes in a thick SiO2 selective growth mask. A SiO2 film with a thickness of 500nm was deposited by sputtering on an AlN buffer layer/SiC substrate. A nanoimprinting technique was applied to produce dot openings. Then, dry etching with CF4 gas was carried out to form deep through-holes in the SiO2 film. In the second MOVPE growth, individual GaN nanocolumns coalesced into a planarized GaN layer, after thinning the SiO2 mask to 100 nm. A cathodeluminescence image of the GaN layer on a GaN nanocolumn template shows a low dislocation density of 1:3 × 108 cm-2, while that of a GaN layer directly grown on an AlN buffer layer shows a dislocation density of 9:4 × 108 cm-2. © 2013 The Japan Society of Applied Physics. Source

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