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Benramache S.,University Mohamed Khider of Biskra | Chabane F.,University Mohamed Khider of Biskra | Benhaoua B.,El - Oued University Center | Lemmadi F.Z.,University Mohamed Khider of Biskra
Journal of Semiconductors | Year: 2013

This paper examines the growth of ZnO thin films on glass substrate at 350 °C using an ultrasonic spray technique. We have investigated the influence of growth time ranging from 1 to 4 min on structural, optical and electrical properties of ZnO thin films. The as-grown films exhibit a hexagonal structure wurtzite and are (002) oriented. The maximum value of grain size G = 63.99 nm is attained for ZnO films grown at 2 min. The average transmittance is about 80%, thus the films are transparent in the visible region. The optical gap energy is found to increase from 3.26 to 3.37 eV with growth time increased from 1 to 2 min. The minimum value of electrical resistivity of the films is 0.13 ω·cm obtained at 2 min. A systematic study on the influence of growth time on the properties of ZnO thin films deposited by ultrasonic spray at 350 °C has been reported. © 2013 Chinese Institute of Electronics. Source


Ydri B.,Annaba University | Ahmim R.,El - Oued University Center
Physical Review D - Particles, Fields, Gravitation and Cosmology | Year: 2013

In this article, we exhibit explicitly the matrix model (θ=∞) fixed point of φ4 theory on noncommutative spacetime with only two noncommuting directions, using the Wilson renormalization group recursion formula and the 1/N expansion of the zero-dimensional reduction, and then calculate the mass critical exponent ν and the anomalous dimension η in various dimensions. © 2013 American Physical Society. Source


Benramache S.,University Mohamed Khider of Biskra | Benhaoua B.,El - Oued University Center | Chabane F.,University Mohamed Khider of Biskra | Guettaf A.,University Mohamed Khider of Biskra
Optik | Year: 2013

Nanocrystalline ZnO thin films are deposited through two different chemical methods: (i) the films prepared by ultrasonic spray with 0.1 M and (ii) dip-coating from zinc acetate complex solutions with 0.5 M, the films obtained at different temperatures. The XRD analyses indicated that ZnO films have nanocrystalline hexagonal structure with (0 0 2) preferential orientation and the maximum crystallite size value of 103 nm measured from the films prepared by dip-coating. UV-vis measurement indicated that all films are transparency in the visible region. The optical band gap increased with decreasing of the Urbach tail energy indicating that the increase in the transition tail width and decrease of the defects, respectively. © 2013 Elsevier GmbH. Source


Benramache S.,University Mohamed Khider of Biskra | Benhaoua B.,El - Oued University Center | Chabane F.,University Mohamed Khider of Biskra
Journal of Semiconductors | Year: 2012

Transparent conducting Co doped ZnO thin films have been fabricated by Ultrasonic spray. The thin films were deposited at three different substrate temperatures of 300, 350 and 400°C. The obtained films had a hexagonal wurtzite structure with a strong (002) preferred orientation. The maximum crystallite size value of the film deposited at 350 °C is 55.46 run. Spectrophotometer (UV-vis) of a Co doped ZnO film deposited at 350 °C shows an average transmittance of about 90%. The band gap energy increased from 3.351 to 3.362 eV when the substrate temperature increased from 300 to 350 °C. The electrical conductivity of the films deposited at 300, 350 and 400 °C were 7.424, 7.547 and 6.743 (Ω·cm) -1 respectively. The maximum activation energy value of the films at 350 °C was 1.28 eV, indicating that the films exhibit a n-type semiconducting nature. © 2012 Chinese Institute of Electronics. Source


Benramache S.,University Mohamed Khider of Biskra | Benhaoua B.,El - Oued University Center
Superlattices and Microstructures | Year: 2012

Transparent conducting indium doped zinc oxide was deposited on glass substrate by ultrasonic spray method. The In doped ZnO samples with indium concentration of 3 wt.% were deposited at 300, 350 and 400 °C with 2 min of deposition time. The effects of substrate temperature and annealing temperature on the structural, electrical and optical properties were examined. The DRX analyses indicated that In doped ZnO films have polycrystalline nature and hexagonal wurtzite structure with (0 0 2) preferential orientation and the maximum average crystallite size of ZnO: In before and annealed at 500 °C were 45.78 and 55.47 nm at a substrate temperature of 350 °C. The crystallinity of the thin films increased by increasing the substrate temperature up 350 °C, the crystallinity improved after annealing temperature at 500 °C. The film annealed at 500 °C and deposited at 350 °C show lower absorption within the visible wavelength region. The band gap energy increased from E g = 3.25 to 3.36 eV for without annealing and annealed films at 500 °C, respectively, indicating that the increase in the transition tail width. This is due to the increase in the electrical conductivity of the films after annealing temperature. © 2012 Elsevier Ltd. All rights reserved. Source

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