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News Article | February 28, 2017
Site: globenewswire.com

Trappes, Bollène, Cambridge MD et San Diego CA, 28 février 2017 - 07:00 CET - Poursuivant sa stratégie de positionnement sur des marchés à forts potentiels, Egide (ISIN: FR0000072373 - Euronext Paris (TM) - Compartiment C), annonce aujourd'hui l'acquisition, comme prévu, des actifs et des passifs d'exploitation de la société américaine TMS LLC (ou Thermal Management Solutions, exerçant son activité sous le nom de Santier), aux conditions fixées entre les parties. Ces actifs et passifs seront incorporés dans une nouvelle société de droit américain, créée à cet effet et nommée Santier Inc. Ainsi, l'organigramme d'Egide est désormais le suivant : Egide SA (France), détient 100% d'Egide USA LLC, qui détient elle-même 100% d'Egide USA Inc. et de Santier Inc. Egide SA, Egide USA Inc. et Santier Inc. exercent leurs activités respectivement à Trappes et Bollène (France), à Cambridge, Maryland (USA) et San Diego, Californie (USA). Egide gèrera Santier Inc. avec les équipes dirigeantes actuelles : Kevin Cotner, l'actuel directeur général de TMS, prendra la direction générale de Santier Inc. tandis que Mansoor Mosallaie, actuel vice-président de TMS, sera nommé Directeur général délégué de Santier Inc. Pour mémoire, Santier conçoit et fabrique des composants métalliques (matériaux dissipant, découpage métallique par fil, usinage) et des ensembles hermétiques et non hermétiques pour applications électroniques ; ils offrent également une expertise en traitement de surface et en usinage métallique. En 2016, Santier a enregistré un chiffre d'affaires d'environ 10 M$. L'opération aura un effet positif immédiat sur la marge opérationnelle du groupe Egide ainsi que sur son résultat net. Confirmation des objectifs La technologie, la clientèle et l'organisation de Santier devraient permettre de générer des synergies significatives au niveau du groupe Egide, ainsi qu'une amélioration immédiate de sa rentabilité. Cette acquisition permettra également à Egide de poursuivre son changement de dimension, par le renforcement de sa présence sur les marchés de l'imagerie thermique et de la défense mondiale, avec une prédominance aux Etats-Unis. Santier va enfin contribuer à développer et enrichir l'offre du groupe Egide sur tous ses marchés, et ce en parfaite cohérence avec la stratégie de diversification que le groupe mène depuis plusieurs années. Egide a renouvelé sa qualification OSEO d'entreprise innovante le 30 juillet 2015 Système de management qualité et environnement certifié ISO 9001:2008 et ISO 14001:2004 EGIDE est coté sur Euronext Paris(TM)- Compartiment C - ISIN : FR0000072373 - Reuters : EGID.PA - Bloomberg : GID Les actions EGIDE sont éligibles PEA-PME et FCPI


Faqir M.,University of Bristol | Manoi A.,University of Bristol | Mrotzek T.,Plansee Group | Knippscheer S.,Plansee Group | And 6 more authors.
43rd International Symposium on Microelectronics 2010, IMAPS 2010 | Year: 2010

Raman thermography measurements were performed on AlGaN/GaN multi-finger high electron mobility transistors (HEMTs) to determine their channel temperature at various power levels. The devices were mounted on both silver diamond composite and CuW base plates, in order to benchmark the thermal performance of novel diamond composite base plates compared to traditional materials. We illustrate that AlGaN/GaN HEMT devices mounted on silver diamond composite base plates show peak temperatures which are 50% lower than the peak temperatures exhibited by devices mounted on traditional CuW base plates. This is a dramatic improvement in terms of heat extraction, as basis to enabling longer device life-times and better performances. In addition, time-resolved Raman thermography measurements were carrier out to obtain thermal dynamics of devices on the silver-diamond base plate and on heat diffusion during pulsed device operation. This time-dependent information is of great importance for reliability and failure analyses, as pulsed operation of a HEMT is a typically device operation condition. Finite-element thermal simulations were performed for comparison with the experimental results, and good agreement with the experimental data was obtained. Copyright© (2010) by IMAPS - International Microelectronics & Packaging Society.


Faqir M.,University of Bristol | Faqir M.,University Internationale Of Rabat Uir | Batten T.,University of Bristol | Mrotzek T.,Plansee Group | And 7 more authors.
Microelectronics Reliability | Year: 2012

A novel packaging solution for GaN power electronics for efficient heat extraction in high power devices is presented. The benefits of using silver diamond composites as base plate in packages for GaN power bars are demonstrated. Micro-Raman thermography measurements were carried out to probe the device temperature for devices mounted on different base plates, silver diamond composites and standard CuW, at a range of operating power levels. A significant improvement in terms of thermal management, achieving a reduction in GaN power electronics temperature by up to a factor of two, was obtained when using silver diamond composites base plates with respect to the existing packaging technologies such as of CuW. Bare silver diamond and Cu-plated silver diamond base plates were compared. The influence of die attach to the base plates on thermal performance of GaN power electronics is also discussed. Finite element thermal model was built to correlate to the experiments, and good agreement was achieved. © 2012 Elsevier Ltd. All rights reserved.


Grant
Agency: Cordis | Branch: FP7 | Program: CP | Phase: SPA-2007-2.2-01 | Award Amount: 2.85M | Year: 2008

On the very last months, the Gallium Nitride (GaN) technology has made a remarked breakthrough in the world of the microwave electronics with the announcement of commercially available transistors from 5W to 180W at microwave frequencies. Coming from major transistor industrial vendors from Japon but also from US, it let equipment manufacturers and especially the one from space think that time has come now for a rapid insertion into their systems. Outside the reliability and the European source concerns, these GaN power transistors will roughly increase power density by more than an order of magnitude for large devices (from 0.5 W/mm to 5 W/mm for space applications including deratings). The consequence will then directly impact the packaging technology for which the thermal resistance needs to be importantly reduced if the advantages obtained at die level want to remain at its highest at module and equipment level. To address this critical item for space satellite applications is the aim of the proposed project which is in the ESA roadmap [Ref. ESTEC/AC/418-20, ESA-IPC 2006] for GaN component strategy but not funded by ESA. The ESA funding is being mainly dedicated toward GaN transistor process optimization, reliability and industrialization. In this project, AGAPAC, which stands for Advanced GaN Packaging, we want to establish a space compatible European supply chain for packaging solution of GaN HEMTs and GaN MMICs by 2010. To realize this project objective, we have defined sub-objectives which directly relate to 7 workpackages targeting: This project will extend beyond state of the art for high thermal dissipation composite (up to 600 W/mK) either based onto diamond or carbon nano-fiber compatible with hybride micropackage manufacturing technologies. The challenge remains in developing a space compatible power micropackage able to withstand up to 100 W of dissipated power when standard same size micropackage are around 25 W.


Vivet L.,Valeo | Joudrier A.-L.,French National Center for Scientific Research | Tan K.-L.,Valeo | Morelle J.-M.,Valeo | And 2 more authors.
Applied Surface Science | Year: 2013

Electroless nickel-high-phosphorus Ni-P plating is used as substrate coating in the electronic component technology. The ability to minimize pores formation in solder joints and the wettability of the Ni-P layerremain points of investigation. The qualities and the control of the physical and chemical properties of the deposits are essential for the reliability of the products. In this contribution it has been measured how a controlled change of one property of the Ni-P surface, its average roughness, changes the wettability of this surface before soldering completion, at ambient temperature and under ambient air, and howit contribute to change the amount and size of pores inside solder joints, after soldering completion. Before all, observations of the Ni-P surfaces using scanning electron microscopy have been achieved. Then the wettability has been measured through the determination of both the disperse and the polar fractions of the substrate surface tension, based on the measurements of the wetting angle for droplets of four different liquids, under ambient air and at room temperature (classical sessile drop technique).Finally the X-ray micro-radiography measurements of both the area fraction of pores and the size of the largest pore inside the solder joint of dice laser soldered on the studied substrate, using high melting temperature solder (300°C, PbSnAg) have been achieved. This study clearly demonstrates that both the ability to minimize pores formation in solder joints and the wettability under ambient conditions of the Ni-P substrate decrease and become more variable when its average roughness increases. These effects can be explained considering the Cassie-Baxter model for rough surface wetting behaviour, completed by the model of heterogeneous nucleation and growth for gas bubbles inside a liquid. © 2013 Elsevier B.V. All rights reserved.


Vivet L.,Valeo | Joudrier A.-L.,French National Center for Scientific Research | Bouttemy M.,French National Center for Scientific Research | Vigneron J.,French National Center for Scientific Research | And 4 more authors.
Applied Surface Science | Year: 2013

Electroless nickel-high-phosphorus Ni-P plating is known for its physical properties. In case of electronic and mechatronic assembly processes achieved under ambient conditions the wettability of the Ni-P layer under ambient temperature and ambient air stays a point of surface quality investigation. This contribution will be devoted to the study of the surface properties of Ni-P films for which we performed air plasma treatment. We focus our attention on the evolution of the surface wettability, using the classical sessile drop technique. Interpreting the results with the OWRK model we extract the polar and disperse surface tension components from which we deduced typical evolution of the surface properties with the different treatment settings. By controlling the variations of the parameters of the plasma exposure we are able to change the responses of our Ni-P sample from total hydrophobic to total hydrophilic behaviours. All the intermediate states can be reached by adapting the treatment parameters. So it is demonstrated that the apparent Ni-P surface properties can be fully adapted and the surface setting can be well characterized by wettability measurements. To deep our knowledge of the surface modifications induced by plasma we performed parallel SEM and XPS analyses which provide informations on the structure and the chemical composition of the surface for each set of treatment parameters. Using this double approach we were able to propose a correlation between the evolution of surface chemical composition and surface wettability which are completely governed by the plasma treatment conditions. Chemical parameters as the elimination of the carbon contamination, the progressive surface oxidation, and the slight incorporation of nitrogen due to the air plasma interaction are well associated with the evolution of the wettability properties. So a complete engineering for the Ni-P surface preparation has been established. The sessile drop method can be considered as a very efficient method to propose qualification of treatments onto Ni-P surfaces before performing electronic and mechatronic assembly processes that are achieved under ambient conditions. © 2013 Elsevier B.V. All rights reserved.


News Article | February 28, 2017
Site: globenewswire.com

Completion of the acquisition of SANTIER in the USA Trappes, Bollène, Cambridge MD & San Diego CA, February 28, 2017- 07:00 am CET - Following its strategy to concentrate on high-potential markets, Egide (ISIN: FR0000072373 - Euronext Paris (TM) - Compartment C), announces that is has acquired, as planned, the assets of TMS LLC (or Thermal Management Solutions, dba Santier), with the conditions laid down previously with them. All these elements will be incorporated into a new US company, created for this purpose and named Santier Inc. Then, the Egide Group structure will be: Egide SA (France), owning 100% of Egide USA LLC, the later owning 100% of Egide USA Inc and Santier Inc. Egide SA, Egide USA Inc. and Santier Inc. are operating business respectively in Trappes and Bollene (France), Cambridge, MD (USA) and San Diego, CA (USA). Egide intends to integrate Santier, Inc. with its current executive leadership team: Kevin Cotner, current CEO of TMS, will continue as CEO of Santier Inc., and Mansoor Mosallaie, current Vice-President of TMS, will continue as the General Manager of Santier Inc. . Santier is a world-class manufacturer of engineered thermal management materials, as well as hermetic and non-hermetic assemblies.  They also provide plating services and metal machining capabilities in the San Diego facility. Santier has achieved in 2016 a total turnover of 10 M$. This operation will have an immediate positive effect on Egide's operating margin and net income. This acquisition was funded by an over-subscribed capital increase of over eight million euros on the Paris Stock Exchange (Euronext Paris). Confirmation of outlooks Santier's technology, its customer base and its organization should result in meaningful synergies with Egide, as well as an immediate profit improvement. This acquisition will also enable Egide to considerably change its scope, achieving heightened market presence within the thermal imaging and the Defense markets worldwide, and with a US predominance. Santier will also expand and enrich the Egide group's offering on all its markets, in line with the market diversification strategy carried on by Egide over the past few years. Egide maintains its outlooks, including an increase company turnover to about 35 M€ for 2017. "We are very pleased to announce the acquisition of Santier by the EGIDE group," said James F. Collins, Chairman and CEO of EGIDE SA.  "The addition of Santier will bring synergies within our operations, as well as our commercial activities. Santier is a customer oriented business, and adds to the current product offerings by EGIDE. We expect our customers to be pleased with our new capabilities." About Egide Egide is a group with an international dimension, specialized in the manufacture of hermetic packages for sensitive electronic components. It operates in cutting edge markets with strong technology barriers to entry in all critical industry segments (Thermal Imaging, Optronics, Microwave, Power Management, .). Egide has manufacturing facilities in France and the United States. All information about Egide is available at the new website: www.egide-group.com Egide shares are eligible for the French tax incentivized PEA-PME, FCPI investment vehicles Egide is listed on Euronext Paris(TM)- Segment C - ISIN: FR0000072373 - Reuters: EGID.PA - Bloomberg: GID Egide renewed its OSEO label as an innovative company (entreprise innovante) on July 30, 2015 ISO 9001:2008 and ISO 14001:2004 certified quality and environmental management systems


Robert C.,Ecole Normale Superieure de Cachan | Pommier S.,Ecole Normale Superieure de Cachan | Lefebvre S.,Ecole Normale Superieure de Cachan | Ortali M.,EGIDE | Massiot M.,EGIDE
ASME 2012 11th Biennial Conference on Engineering Systems Design and Analysis, ESDA 2012 | Year: 2012

Since few years a 3D electric lines is developed. But new applications will be to expose this circuit to high variation of temperature and use them for electronic power. Circuits lines are made of tungsten and insulation in alumina. These materials have different behavior. That difference implies mechanics stress and stress singularities. Some stress concentration can fracture materials or interface between them. Alumina is a brittle material. We need to know his fracture behavior. A statistic model is already used: Weibull model. The idea is to break about hundred samples and to related the probabilities to break of alumina used in the circuit versus stress. Copyright © 2012 by ASME.


Fontaine M.,Laue Langevin Institute | Paris B.,3S Photonics | Grard E.,3S Photonics | Letteron L.,Egide | And 2 more authors.
IEEE Transactions on Components, Packaging and Manufacturing Technology | Year: 2013

In telecommunication laser emission modules, thermal management is a critical issue for driving lifetime, performances, and power consumption. Combining studies of the thermal properties of materials, the thermoelectrical behavior of the Peltier cooler, and infrared or thermoreflectance temperature imaging, we experimentally validated a finite element-based thermoelectrical model of the whole emission module, providing valuable information for their optimization. © 2012 IEEE.


News Article | February 21, 2017
Site: globenewswire.com

Commentant le succès de cette opération, James F. Collins, Président Directeur Général du groupe EGIDE, déclare : « Nous sommes très heureux d'annoncer le succès de notre augmentation de capital et tenons à vivement remercier nos actionnaires de la confiance qu'ils nous accordent. Les fonds recueillis vont nous permettre de mener avec sérénité la phase finale de l'acquisition des actifs de SANTIER tout en poursuivant la conquête de nouveaux marchés. L'activité de SANTIER s'intégrera parfaitement à celle d'EGIDE et lui permettra de croître sur le marché de la défense aux Etats-Unis. Nous pensons que les synergies entre les deux sociétés permettront une croissance encore plus rapide, et anticipons une augmentation du chiffre d'affaires qui passerait de 24/25 M€ à 35 M€ en 2017. » Egide a renouvelé sa qualification OSEO d'entreprise innovante le 30 juillet 2015 Système de management qualité et environnement certifié ISO 9001:2008 et ISO 14001:2004 EGIDE est coté sur Euronext Paris(TM)- Compartiment C - ISIN : FR0000072373 - Reuters : EGID.PA - Bloomberg : GID Les actions EGIDE sont éligibles PEA-PME et FCPI

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