Fujisawa, Japan
Fujisawa, Japan

Ebara Corporation is a publicly traded company based in Tokyo, Japan which makes environmental and industrial machinery such as pumps and turbines. It is the owner of the Elliott Company in the United States and Sumoto S.r.l. in Italy. This company does not make food products such as barbecue sauce and teriyaki sauce- those products are made by a different company of the same name.Ebara is divided into three main divisions:Fluid Machinery & Systems Company, which produces:Pumps: standard and engineered pumps and pumping system engineeringTurbines: Gas and steam turbines of various sizes, including micro gas turbinesTurbo-compressors, blowers, and fansChillersEnvironmental Engineering Company, which produces:Water treatment and sewage and industrial wastewater systemsSolid waste processing/utilization systemsGas treatment systemsEnvironmental remediation servicesPlant operation & maintenance servicesPrecision Machinery Company which produces:CMP, Plating, and Cleaning systemsDry vacuum and turbo-molecular pumpsGas scrubber systemsOzonized water generatorsChemical filters↑ 1.0 1.1 1.2 1.3 1.4 ↑ ↑ ↑ Wikipedia.


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A polishing method which can remove foreign matters from an entire back surface of a substrate at a high removal rate is provided. The polishing method includes placing a polishing tool in sliding contact with an outer circumferential region of a back surface of a substrate while holding a center-side region of the back surface of the substrate, and placing a polishing tool in sliding contact with the center-side region of the back surface of the substrate while holding a bevel portion of the substrate to polish the back surface in its entirety.


Patent
Ebara Corporation | Date: 2017-02-08

The present invention relates to a driving apparatus for driving an electric motor, such as a synchronous motor or an induction motor, and more particularly to a driving apparatus which performs a vector control based on an output current of an inverter. The driving apparatus of the present invention includes an inverter (10), a current detector (12) configured to detect an output current of the inverter (10), and a vector controller (11) configured to transform the output current, detected by the current detector (12), into a torque current and a magnetization current and to control the torque current and the magnetization current. The vector controller (11) includes a target-output-voltage determination section (27) configured to determine a target output voltage from the torque current, the magnetization current, an angular velocity of the rotor, and motor constants, and a target-magnetization-current determination section (26) configured to determine a magnetization-current command value based on a deviation between the torque-voltage command value and the target output voltage.


Patent
Ebara Corporation | Date: 2016-12-20

A polishing method capable of obtaining an accurate thickness of a silicon layer during polishing of a substrate and determining an accurate polishing end point of the substrate based on the thickness of the silicon layer obtained. The method includes: calculating relative reflectance by dividing the measured intensity of the infrared ray by predetermined reference intensity; producing spectral waveform representing relationship between the relative reflectance and wavelength of the infrared ray; performing a Fourier transform process on the spectral waveform to determine a thickness of the silicon layer and a corresponding strength of frequency component; and determining a polishing end point of the substrate based on a point of time when the determined thickness of the silicon layer has reached a predetermined target value.


Patent
Ebara Corporation | Date: 2016-12-21

A polishing apparatus is used for polishing a substrate such as a semiconductor wafer. The polishing apparatus includes a substrate holder to hold a substrate and to rotate the substrate, a pressing member configured to press a polishing tool against the substrate and to polish the substrate, a pressing force control mechanism configured to control a pressing force of the pressing member, and a polishing position limiting mechanism configured to limit a polishing position of the pressing member. A polishing tape or a fixed abrasive is used as the polishing tool.


Patent
Ebara Corporation | Date: 2016-10-19

Disclosed is a polishing apparatus that polishes a substrate by causing the substrate to be in slide contact with a polishing pad. The polishing apparatus includes a pad temperature control mechanism configured to control a surface temperature of the polishing pad, which includes a pad contact member that comes in contact with the surface of the polishing pad and a liquid supply system configured to supply a temperature-controlled liquid to the pad contact member. The pad contact member includes a liquid flow path therein, and the liquid flow path communicates with a liquid inlet and a liquid outlet connected to the liquid supply system. At least one planar baffle is disposed in the liquid flow path, and the baffle has a space therein.


Patent
Ebara Corporation | Date: 2016-09-30

The polishing apparatus has: a polishing pad that has a polishing surface to polish a semiconductor wafer; a polishing table to which a back surface of the polishing pad on an opposite side of the polishing surface can be attached; a top ring that is opposed to the polishing surface, and can hold the semiconductor wafer; and an eddy current sensor that is arranged in the polishing table, and detects an end point of polishing. The polishing table has on an attachment surface a projection member projecting from the attachment surface to which the polishing pad is attached. The back surface of the polishing pad has a concave portion in a portion opposed to the projection member, and at least a part of the eddy current sensor is arranged inside the projection member.


Patent
Ebara Corporation | Date: 2016-11-21

A polishing method capable of obtaining a stable film thickness without being affected by a difference in measurement position is disclosed. The polishing method includes: rotating a polishing table that supports a polishing pad; pressing the surface of the wafer against the polishing pad; obtaining a plurality of film-thickness signals from a film thickness sensor during a latest predetermined number of revolutions of the polishing pad, the film thickness sensor being installed in the polishing table; determining a plurality of measured film thicknesses from the plurality of film-thickness signals; determining an estimated film thickness at a topmost portion of the raised portion based on the plurality of measured film thicknesses; and monitoring polishing of the wafer based on the estimated film thickness at the topmost portion of the raised portion.


Patent
Ebara Corporation | Date: 2016-11-14

A substrate holding apparatus that can minimize a deflection amount of a substrate due to its own weight and can suppress vibration of the substrate at the time of rotation of the substrate even if a diameter of the substrate becomes large is disclosed. The substrate holding apparatus holds a periphery of a substrate and rotates the substrate. The substrate holding apparatus includes a plurality of support posts supported by a base and vertically movable relative to the base, a plurality of chucks respectively provided on the plurality of support posts and configured to hold the periphery of the substrate, and at least one support pin configured to support a lower surface of the substrate held by the plurality of chucks.


According to one embodiment of the present disclosure, provided is a method of calibrating a relationship among a pressure command value, a pressure in an air-bag, and a pressure read value of the air-bag in a substrate polishing apparatus, the substrate polishing apparatus including: a polishing table; the air-bag configured to press a substrate against the polishing table, the pressure for pressing the substrate being variable; and a pressure control unit configured to control the pressure in the air-bag in accordance with the pressure command value inputted to the pressure control unit, and read the pressure in the air-bag.


An elastic membrane capable of precisely controlling a polishing profile in a narrow area of a wafer edge portion is disclosed. The elastic membrane includes a contact portion to be brought into contact with a substrate; a first edge circumferential wall extending upwardly from a peripheral edge of the contact portion; and a second edge circumferential wall having a horizontal portion connected to an inner circumferential surface of the first edge circumferential wall. The inner circumferential surface of the first edge circumferential wall includes an upper inner circumferential surface and a lower inner circumferential surface, both of which are perpendicular to the contact portion, The upper inner circumferential surface extends upwardly from the horizontal portion of the second edge circumferential wall, and the lower inner circumferential surface extends downwardly from the horizontal portion.

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