East West University of Bangladesh

www.ewubd.edu
Dhaka, Bangladesh

East West University is a private university located in Dhaka, Bangladesh. It was established in 1996 by the Private University Act, 1992. Its campus is in Jahrul Islam City, Aftabnagar.The university is accredited by the government of the People’s Republic of Bangladesh, and its curricula and programs have been approved by the Bangladesh University Grants Commission. The President of the People’s Republic of Bangladesh is the Chancellor of EWU. The Vice Chancellor, the Pro-Vice Chancellor, and the Treasurer are appointees of the President of the country in his capacity as the Chancellor of the University.East West University has collaboration agreements with Pace University, Suffolk University, Southern Illinois University, University of Luton, University of Fukui. EWU has entered into collaboration agreements with universities in the USA, UK and Australia.Pharmacy Council of Bangladesh is the sole accreditation authority in Bangladesh to accredit professional degree programme in Pharmacy. The council accredited the Department of Pharmacy, East West University on August 13, 2007.The university has student clubs to promote sporting and academic activities. Wikipedia.

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Alam K.,East West University of Bangladesh | Lake R.K.,University of California at Riverside
IEEE Transactions on Electron Devices | Year: 2012

The performance of a 5-nm gate length monolayer MoS2 transistor is benchmarked against an ultrathin body Si transistor of similar dimensions and the ITRS requirements for 2026 low operating power (LOP) technology. The MoS2 transistor has a subthreshold slope of 70 mV/dec, an on-/off-current ratio of 4.8 × 104, a drive current of 238 μA/μM, a peak transconductance of 2.65 mS/μm, a total capacitance of 0.164 fF/μm , and an intrinsic switching delay of 0.276 ps. These numbers for the silicon competitor are 79 mV/dec, 1.8 × 104, 89 μA/μm, 1.22 mS/μm, 0.0733 fF/μm, and 0.331 ps, respectively. The heavier effective mass of the MoS2 significantly reduces the direct source-drain leakage current, and it increases the drive current and the transconductance. The performance metrics of MoS2 transistor are comparable to the ITRS 2026 LOP technology requirements. © 1963-2012 IEEE.


Karim M.A.,United International University Dhanmondi | Haque A.,East West University of Bangladesh
IEEE Transactions on Electron Devices | Year: 2010

We present a physically based explicit analytical model for the quantum mechanical (QM) correction to the surface potential of nanoscale metaloxidesemiconductor (MOS) devices. The effect of wave function penetration into the gate dielectric is taken into account. Instead of using the band-gap widening approach, which indirectly includes QM correction, the proposed correction term is directly added to the semiclassical surface potential. Under accumulation bias, charges in extended states and quantized states contribute to the surface potential in different ways. The proposed QM correction considers this difference in contributions. Comparison with two existing analytical QM correction models and two self-consistent QM numerical models show that the proposed correction is more accurate than the existing analytical models. The improvement achieved under the accumulation bias is particularly significant. The gate C-V characteristics of a number of different MOS devices have been simulated using the proposed correction. Excellent agreement with published experimental data has been observed. © 2009 IEEE.


Alam K.,East West University of Bangladesh | Sajjad R.N.,University of Virginia
IEEE Transactions on Electron Devices | Year: 2010

The electronic properties, namely, the band structures, the band gaps, and the electron effective masses of hydrogen-passivated InAs nanowires grown in 〈100〉, 〈110〉, and 〈111〉 crystallographic directions are studied using sp3d5s* orbital-basis tight-binding model. We then parameterize the band gaps and electron effective masses to facilitate device simulation and to study the orientation-dependent performance of n-channel InAs nanowire transistors using a top-of-the-barrier model. The 〈111〉 and 〈110〉 wire transistors have better performance metrics. The quantum-confinement effect is largest in the 〈 100〉 wire, which results in a higher band gap and a heavier effective mass for relatively smaller diameter wires. The consequence is lower current, higher density of states, higher quantum capacitance, and longer delay in the 〈100〉 wire transistors. The 〈110〉 and 〈111〉 wires have a very similar quantum-confinement effect, even for the smaller diameters, which results in similar band gaps, similar effective masses, and similar performance metrics. © 2010 IEEE.


Alam K.C.A.,East West University of Bangladesh | Saha B.B.,Kyushu University | Akisawa A.,Tokyo University of Agriculture and Technology
Applied Thermal Engineering | Year: 2013

An analytical investigation has been performed to study the possibility of application of solar cooling for the climatic condition of Tokyo, Japan. Silica gel-water adsorption cooling system has been taken into consideration for the present study and lumped parameter model is used to investigate the performance of the system. Based on the solar radiation data it is found that at least 15 collector (each of 2.415 m2) is required to achieve the required heat source temperature (around 85 °C) to run the cooling unit. It is also observed that the solar powered adsorption cooling unit provides cooling capacity around 10 kW at noon with base run conditions, while the system provides solar COP around 0.3, however, the solar collector size can be reduced by optimizing the cycle time. © 2012 Published by Elsevier Ltd.


Paul B.P.,New York University | Uddin G.S.,East West University of Bangladesh
Energy Economics | Year: 2011

The relationship between energy consumption and output is still ambiguous in the existing literature. The economy of Bangladesh, having spectacular output growth and rising energy demand as well as energy efficiency in recent decades, can be an ideal case for examining energy-output dynamics. We find that while fluctuations in energy consumption do not affect output fluctuations, movements in output inversely affect movements in energy use. The results of Granger causality tests in this respect are consistent with those of innovative accounting that includes variance decompositions and impulse responses. Autoregressive distributed lag models also suggest a role of output in Bangladesh's energy use. Hence, the findings of this study have policy implications for other developing nations where measures for energy conservation and efficiency can be relevant in policymaking. © 2010 Elsevier B.V.


Alam K.,East West University of Bangladesh
IEEE Transactions on Electron Devices | Year: 2012

A tight-binding sp 3d 5s * orbital basis quantum simulation is performed to study the uniaxial stress-modulated electronic properties of an InAs nanowire in three different crystallographic directions. Over the entire range of axial stress used in this study, the wire exhibits a direct band gap under uniaxial stress in 〈100〉 and 〈111〉 directions; however, a direct to indirect transition is observed in 〈110〉 direction at a relatively large tensile stress. The band gap variation with stress is linear in 〈100〉 and 〈111〉 directions, and the gap is relatively insensitive to external stress in 〈110〉 direction. However, after the direct to indirect transition in 〈110〉 direction, the band gap is reduced with stress. The electron and hole effective masses show the highest dependence on external stress in 〈100〉 direction, and a big jump in the hole effective mass is observed in 〈100〉 and 〈110〉 directions under tensile stress. From the projection of normalized wave function to different orbitals, it is found that the direct to indirect transition in 〈110〉 direction and the discontinuity in the hole effective mass in 〈100〉 and 〈110〉 directions result from the change in top valence band wave function symmetry. © 2011 IEEE.


Rahman S.,University of Plymouth | Barmon B.K.,East West University of Bangladesh
Energy | Year: 2012

'Gher' farming is a unique system that incorporates the joint operation of three enterprises: freshwater prawn, fish and HYV rice, and is expanding rapidly in the coastal regions of Bangladesh because of its proven high income earning potential. In this paper, the sustainability of this system is evaluated by analysing its performance in terms of energy use by applying a stochastic distance function approach which revealed interesting and unexpected results. The prawn enterprise which is the key income earning component is found to be technically inefficient while the rice enterprise is found to be efficient. The net energy balance and the energy use efficiency of the 'gher' farming system is estimated at 18,510 MJ ha -1 and 1.72 respectively. The 'gher' farmers are operating at a very high level of technical (energy) efficiency (92%). Diversification amongst enterprises is associated with technical (energy) inefficiency. However, larger operation size enhances efficiency. The key policy implication is that the 'gher' farming system can be sustained in the long run provided that productivity from the rice enterprise remains high. Also, policies to support the expansion of 'gher' farm sizes will improve efficiency. © 2012 Elsevier Ltd.


Amin M.R.,East West University of Bangladesh
Physics of Plasmas | Year: 2015

Amplitude modulation of a compressional Alfven wave in compensated electron-hole semiconductor plasmas is considered in the quantum magnetohydrodynamic regime in this paper. The important ingredients of this study are the inclusion of the particle degeneracy pressure, exchange-correlation potential, and the quantum diffraction effects via the Bohm potential in the momentum balance equations of the charge carriers. A modified nonlinear Schrödinger equation is derived for the evolution of the slowly varying amplitude of the compressional Alfven wave by employing the standard reductive perturbation technique. Typical values of the parameters for GaAs, GaSb, and GaN semiconductors are considered in analyzing the linear and nonlinear dispersions of the compressional Alfven wave. Detailed analysis of the modulation instability in the long-wavelength regime is presented. For typical parameter ranges of the semiconductor plasmas and at the long-wavelength regime, it is found that the wave is modulationally unstable above a certain critical wavenumber. Effects of the exchange-correlation potential and the Bohm potential in the wave dynamics are also studied. It is found that the effect of the Bohm potential may be neglected in comparison with the effect of the exchange-correlation potential in the linear and nonlinear dispersions of the compressional Alfven wave. © 2015 AIP Publishing LLC.


Satter Md.M.,Bangladesh University of Engineering and Technology | Haque A.,East West University of Bangladesh
Solid-State Electronics | Year: 2010

A physically based, quantum mechanical (QM) model is presented for simulating low frequency gate C-V characteristics of MOS devices on arbitrary substrates including interface trap (Dit) effects. MOS electrostatics is determined from the self-consistent solution of one-dimensional Schrödinger's and Poisson's equations considering wave function penetration into the gate dielectric. The effects of strain and/or the variation of material composition in each layer of MOS structures on non-conventional substrates are also included in the model. The proposed model can support arbitrary Dit distributions (both donor and acceptor types) within the entire bandgap as well as within the conduction and the valence bands. Comparisons with two other existing C-V models are also made. Numerical results show that for accurate simulation of the low frequency C-V characteristics, the energy distributions of the Dit over the entire bias range and a model that considers QM effects with wave function penetration are necessary. Excellent agreement with published experimental data for MOS structures on Si, Ge and III-V substrates is achieved through appropriate selection of the Dit distributions. The proposed model can be used to extract Dit profiles of MOS structures on alternative substrates by comparing with measured low frequency C-V characteristics and to verify the accuracy of Dit profiles extracted using other techniques. © 2010 Elsevier Ltd. All rights reserved.


Amin M.R.,East West University of Bangladesh
Physica Scripta | Year: 2015

Amplitude modulation of electrostatic Langmuir waves in a quantum electron-hole semiconductor plasma is considered in the quantum magnetohydrodynamic regime. The important ingredients of this study are the inclusion of the particle degeneracy pressure, exchange-correlation potential, and the quantum diffraction effects via the Bohm potential. A nonlinear Schrödinger equation (NLSE) is developed for the evolution of the amplitude of the electrostatic wave by employing the standard reductive perturbation technique. The dynamics of the wave in the slow space-time scales is governed by the NLSE. Typical values of the parameters for GaAs, GaSb, and GaN semiconductors are considered in analyzing the nonlinear dispersion of the electrostatic wave. Detail analysis of the nature of the modulation, here modulation instability, in the long-wavelength regime is presented. For some parameter ranges of the semiconductor plasmas, and at the long-wavelength regime, it is found that the electrostatic wave is modulationally unstable. Effects of the exchange-correlation potential and the Bohm potential are also studied. It is found that the exchange-correlation potential has profound effects compared to the Bohm potential in the amplitude modulation of the electrostatic wave. © 2015 The Royal Swedish Academy of Sciences.

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