East China Institute of Photo electronic

Suzhou, China

East China Institute of Photo electronic

Suzhou, China

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Jiang D.,Changchun University of Science and Technology | Tian C.,Changchun University of Science and Technology | Liu Q.,East China Institute of Photo electronic | Zhao M.,PLA Air Force Aviation University | And 5 more authors.
Materials Science and Engineering A | Year: 2014

We used a contact-mode atomic force microscopy (AFM) to study the mechanical properties of an individual ZnO nanowire in the open air. It is noteworthy that the Young's modulus can be determined by an AFM tip compressing a single nanowire on a rigid substrate, which can bring more repeatability and accuracy for the measurements. In particular, the calculated radial Young's modulus of ZnO nanowires is consistent with the data of ZnO bulks and thin films. We also present the Young's modulus with different diameters, and all these are discussed deeply. © 2014 Elsevier B.V.


Tian C.,Changchun University of Science and Technology | Jiang D.,Changchun University of Science and Technology | Zhao Y.,Changchun University of Science and Technology | Liu Q.,East China Institute of Photo electronic | And 5 more authors.
Materials Science and Engineering B: Solid-State Materials for Advanced Technology | Year: 2014

In this study, metal-semiconductor-metal (MSM) Schottky ultraviolet (UV) photodetectors were based on c-axis preferred oriented zinc oxide (ZnO) films, which were prepared on quartz substrates by radio frequency (RF) magnetron sputtering technique. The responsivity of the photodetector was enlarged greatly after annealing the MSM device. Meanwhile, the enhancement in the dark current that resulted from the experiment was accompanied by the increasing annealing temperature. The origin is preliminarily discussed combining the observations of dark currents and responsivities. The physical mechanism of the continuous annealing is proposed on the basis of metal-semiconductor contact theory and diffusion effect. By this model, Au atoms from the electrode play an important role in the Schottky barrier during annealing process. These results demonstrate that a simple route to improve the responsivities of photodetectors can be realized easily by annealing the devices. © 2014 Elsevier B.V.

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