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Kameshima T.,Japan Synchrotron Radiation Research Institute | Ono S.,RIKEN | Kudo T.,RIKEN | Ozaki K.,RIKEN | And 12 more authors.
Review of Scientific Instruments | Year: 2014

This paper presents development of an X-ray pixel detector with a multi-port charge-coupled device (MPCCD) for X-ray Free-Electron laser experiments. The fabrication process of the CCD was selected based on the X-ray radiation hardness against the estimated annual dose of 1.6 × 10 14 photon/mm2. The sensor device was optimized by maximizing the full well capacity as high as 5 Me- within 50 μm square pixels while keeping the single photon detection capability for X-ray photons higher than 6 keV and a readout speed of 60 frames/s. The system development also included a detector system for the MPCCD sensor. This paper summarizes the performance, calibration methods, and operation status. © 2014 Author(s).

News Article | November 10, 2016
Site: www.prnewswire.co.uk

Global CMOS Sensor Market 2016 Research Report initially provides a basic overview of the industry that covers definition, applications and manufacturing technology, post which the report explores into the international players in the market. Complete report on CMOS Sensor market spread across 110 pages providing 17 company profiles and 125 tables and figures is available at http://www.deepresearchreports.com/287976.html . Market Segment by Regions, this report splits Global into several key Region, with production, consumption, revenue, market share and growth rate of CMOS Sensor in these regions, from 2011 to 2021 (forecast), like North America, China, Europe, Japan, India, Southeast Asia split by product type, with production, revenue, price, market share and growth rate of each type Split by application, this report focuses on consumption, market share and growth rate of CMOS Sensor in each application. This report studies CMOS Sensor in Global market, especially in North America, Europe, China, Japan, Southeast Asia and India, focuses on top manufacturers in the global market, with sales, price, revenue and market share for each manufacturer, covering Sony, Samsung, OmniVision Technologies, On Semiconductor, STMicroelectronics, Galaxycore, Pixelplus, Siliconfile, Canon, Nikon, SK HYNIX, Toshiba, Panasonic, CMOSIS, Teledyne DALSA, E2v and Forza Silicon. Order a copy at http://www.deepresearchreports.com/contacts/purchase.php?name=287976 . Some key points from list of tables and figures: Figure 2015 CMOS Sensor Production Share by Manufacturers Figure 2016 CMOS Sensor Production Share by Manufacturers Table Global CMOS Sensor Revenue (Million USD) by Manufacturers (2015 and 2016) Table Global CMOS Sensor Revenue Share by Manufacturers (2015 and 2016) Table 2015 Global CMOS Sensor Revenue Share by Manufacturers Table 2016 Global CMOS Sensor Revenue Share by Manufacturers Table Global Market CMOS Sensor Average Price of Key Manufacturers (2015 and 2016) Figure Global Market CMOS Sensor Average Price of Key Manufacturers in 2015 Table Manufacturers CMOS Sensor Manufacturing Base Distribution and Sales Area Table Manufacturers CMOS Sensor Product Type Figure CMOS Sensor Market Share of Top 3 Manufacturers Figure CMOS Sensor Market Share of Top 5 Manufacturers Table Global CMOS Sensor Production by Regions (2011-2016) Similar research titled "2016 Market Research Report on United States CMOS Sensor Industry" spread across 137 pages and profiles 17 companies that provide a basic overview of the industry including definitions, classifications, applications and industry chain structure. The CMOS Sensor market analysis is provided for the United States markets, including development trends, competitive landscape analysis, and key regions development status. Development policies and plans are discussed as well as manufacturing processes and Bill of Materials cost structures are also analyzed. This report also states import/export, consumption, supply and demand Figures, cost, price, revenue and gross margins. The report focuses on United States major leading industry players, providing information such as company profiles, product picture and specification, capacity, production, price, cost, revenue and contact information. Upstream raw materials and downstream demand analysis is also carried out. The CMOS Sensor industry development trends and marketing channels are analyzed. Finally the feasibility of new investment projects is assessed and overall research conclusions offered. Few key manufacturers included in this report are Sony, Samsung, OmniVision Technologies, On Semiconductor, STMicroelectronics,Galaxycore, Pixelplus, Siliconfile, Canon, Nikon, SK HYNIX, Toshiba, Panasonic, CMOSIS, Teledyne DALSA, e2v and Forza Silicon. 2016 Market Research Report on United States CMOS Sensor Industry is available at http://www.deepresearchreports.com/158118.html . Explore more reports on Electronics market at http://www.deepresearchreports.com/cat/electronics-market-research.html . About Us: Deep Research Reports is digital database of syndicated market reports for global and China industries. These reports offer competitive intelligence data for companies in varied market segments and for decision makers at multiple levels in these organizations. We provide 24/7 online and offline support to our customers

Brugiere T.,Institute Of Physique Nucleaire Of Lyon | Brugiere T.,University of Lyon | Mayer F.,e2v | Fereyre P.,e2v | And 7 more authors.
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | Year: 2015

Abstract Scientific low light imaging devices benefit today from designs for pushing the mean noise to the single electron level. When readout noise reduction reaches its limit, signal-to-noise ratio improvement can be driven by an electron multiplication process, driven by impact ionization, before adding the readout noises. This concept already implemented in CCD structures using extra-pixel shift registers can today be integrated inside each pixel in CMOS technology. The EBCMOS group at IPNL is in charge of the characterization of new prototypes developed by E2V using this concept: the electron multiplying CMOS (EMCMOS). The CMOS technology enables electron multiplication inside the photodiode itself, and thus, an overlap of the charge integration and multiplication. A new modeling has been developed to describe the output signal mean and variance after the impact ionization process in such a case. In this paper the feasibility of impact ionization process inside a 8μm-pitch pixel is demonstrated. The new modeling is also validated by data and a value of 0.32% is obtained for the impact ionization parameter α with an electric field intensity of 24V/μm. © 2015 Published by Elsevier B.V.

Buton C.,University of Lyon | Buton C.,French National Center for Scientific Research | Fereyre P.,E2V | Fournier M.,University of Lyon | And 3 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2016

We will present in this article the latest developments on the electron multiplying CMOS (emCMOS) image sensor and its potential for adaptive optics applications. We will focus on the E2V pixel structures made in a 180 nm standard technology which have proved their ability to multiply signal significantly during integration of photo-generated carriers with an impact ionizing probability around 1%. Finally, we will discuss our study on different sources of charge carriers during the integration, multiplication and readout phases in order to understand the contribution of the electron multiplication to the output signal, the excess noise factor and the signal-To-noise ratio. © 2016 SPIE.

Martin E.,French National Center for Space Studies | Nuns T.,ONERA | David J.-P.,ONERA | Gilard O.,French National Center for Space Studies | And 4 more authors.
IEEE Transactions on Nuclear Science | Year: 2014

The radiation tolerance of a 0.18 μm technology CMOS commercial image sensor has been evaluated with Co60 and proton irradiations. The effects of protons on the hot pixels and dynamic bias and duty cycle conditions during gamma irradiations are studied. © 1963-2012 IEEE.

Wingender M.,E2v | Benn A.,E2v
IEEE National Radar Conference - Proceedings | Year: 2010

In advanced applications such as digital radar, Ultra Wide Bandwidth communications and software defined radio, the need for instantaneous bandwidth often drives system design decisions. Access to high speed data converters enabling up and down conversion directly in the L Band and S Band removes the limit imposed by bandwidth scarcity and allows the design of flexible and simplified system architectures. Broadband ADC's (Analogue to Digital Converters) are key enabling components which open up new design opportunities for digital Receiver systems. In this regard, this paper describes a new 10bit 3GS/s ADC with 5 GHz Bandwidth, based on a 200 GHz SiGeC bipolar Technology, which enables the direct digitizing of 1GHz arbitrary broadband waveforms directly in the high IF region closer to the Antenna (L-Band or S-Band). © 2010 IEEE.

Glascott-Jones A.,E2v | Wingender M.,E2v | Bore F.,E2v | Chantier N.,E2v | Bellin D.,E2v
IEEE Aerospace Conference Proceedings | Year: 2014

In advanced applications such as satellite telecommunications, digital radar, frequency hopping data links and micro-wave communications, powerful signal processors able to handle broadband signal vectors are becoming more common. The bottleneck is now the availability of high sampling rate and high linearity data converters, ADCs (Analog to Digital Converter) for reception and DACs (Digital to Analog Converter) for transmission. © 2014 IEEE.

Jerram P.,E2v | Morris D.,E2v
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2016

The large number of missions associated with ESA's Copernicus program has necessitated several new image sensor designs for earth observation (or living planet) applications as each instrument needs to be highly optimized. Whilst the majority of these sensors have utilised CCD technology, the use of CMOS is starting to increase. New CCD designs and technology trends for hyperspectral applications such as Sentinel 4, Sentinel 5, Sentinel 5 precursor (TropOMI), Flex and 3MI are described. In these the sensor design has been optimized to provide highest possible signal levels with lowest possible noise in combination with higher frame rates and reduced image smear. CMOS sensors for MTG (Meteosat Third Generation) and METImage are then described. Both use extremely large pixels, up to 250μm square, at high line rates. Radiation test data and key performance measurements are shown for MTG and for a test device that has been made for METImage. Finally, newer developments including back-illumination and means for achieving a TDI function in standard-processed CMOS are briefly described. COPYRIGHT © SPIE. Downloading of the abstract is permitted for personal use only.

Glascott-Jones A.,E2v | Wingender M.,E2v | Bore F.,E2v | Chantier N.,E2v
International Radar Symposium, IRS 2011 - Proceedings | Year: 2011

This paper will describe the architecture and results obtained with two new e2v products designed for Space grade applications which open up new design possibilities for direct conversion of signals to and from L band. © 2011 DGON.

Glascott-Jones A.,E2v | Chantier N.,E2v | Bore F.,E2v | Wingender M.,E2v
Proceedings International Radar Symposium | Year: 2013

New components for direct conversion Radar systems have been introduced, these include: A single chip, 10 bit Analog to Digital converter (ADC) with a sample rate of 3GSps and an analog bandwidth of 5GHz giving a usable bandwidth of 1.5GHz in the L and S bands; © 2013 German Inst of Navigation.

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