Deerfield, IL, United States
Deerfield, IL, United States

Beam Suntory, Inc. is an American manufacturer of spirits headquartered in Deerfield, Illinois. It is a subsidiary of Suntory Holdings of Osaka, Japan.The company'’s principal products include bourbon whiskey, tequila, Scotch whisky, Irish whiskey, Canadian whisky, vodka, cognac, rum, cordials, and ready-to-drink pre-mixed cocktails.As a distinct entity, the company was established as Beam Inc. on October 3, 2011, from the remainder of the Fortune Brands holding company after it sold and spun off various other product lines to form a business focused exclusively on spirits and directly related products.On Monday, January 13, 2014, Suntory announced a deal to buy Beam Inc. for about $13.6 billion. The acquisition was completed on April 30, 2014, for a final cost of about $16 billion – when it was also announced that Beam would be renamed as "Beam Suntory". Suntory Beverage & Food Ltd trades on the Tokyo Stock Exchange . Wikipedia.


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A plasma-based processing system and a corresponding operation method are proposed. One or more absorbers are positioned between a plasma generation volume inside the plasma chamber and a support structure configured to support the workpiece, and then a portion of plasma delivered from the plasma generation volume to the support structure (or the workpiece) is absorbed by the absorber(s). Further, the absorber(s) are made of electrical conductive material(s), and the structure of at least one absorber and/or the relative geometric relation between at least two absorbers is adjustable. Hence, the position(s) of the electric conductor(s) overlap(s) with the delivered plasma may be adjusted, and then the ion current distribution on the cross section of the delivered plasma may be modified correspondingly.


A method is provided for relaying instant messages between a first user of a first mobile device and a second user of a second mobile device. By input through an interface of an instant messaging application, a first instant message is received from a first user of a first mobile device, at least a portion of which first instant message is recorded as a voice input. The voice input is automatically transcribed as text as it is received. The first instant message is transmitted to an instant messaging application on a second mobile device. Voice and transcribed text portions of the first instant message are transmitted substantially simultaneously as the first instant message is received.


Patent
Beam Inc | Date: 2016-04-20

Systems and processes for plasma-based material modification of a work piece are provided. In an example process, a first plasma in a plasma source chamber is generated. A magnetic field is generated using a plurality of magnets. The magnetic field confines electrons of the first plasma having energy greater than 10 eV within the plasma source chamber. A second plasma is generated in a process chamber coupled to the plasma source chamber. An ion beam is generated in the process chamber by extracting ions from the first plasma through the plurality of magnets. The ion beam travels through the second plasma and is neutralized by the second plasma to generate a neutral beam. The work piece is positioned in the process chamber such that the neutral beam treats a surface of the work piece.


Patent
Beam Inc | Date: 2015-01-26

A deceleration apparatus capable of decelerating a short spot beam or a tall ribbon beam is disclosed. In either case, effects tending to degrade the shape of the beam profile are controlled. Caps to shield the ion beam from external potentials are provided. Electrodes whose position and potentials are adjustable are provided, on opposite sides of the beam, to ensure that the shape of the decelerating and deflecting electric fields does not significantly deviate from the optimum shape, even in the presence of the significant space-charge of high current low-energy beams of heavy ions.


Patent
Beam Inc | Date: 2015-04-03

In forming a punch-through stopper region in a fin field effect transistor (finFET) device, a substrate may be etched to form a pair of trenches that define a fin structure. A portion of a first dose of ions may be implanted into the substrate through a bottom wall of each trench to form a pair of first dopant regions that at least partially extend under a channel region of the fin structure. The substrate at the bottom wall of each trench may be etched to increase a depth of each trench. Etching the substrate at the bottom wall of each trench may remove a portion of each first dopant region under each trench. A remaining portion of the pair of first dopant regions under the fin structure may at least partially define the punch-through stopper region of the finFET device.


A method is provided for relaying instant messages between a first user of a first mobile device and a second user of a second mobile device. After at least a first character of a first message input by the first user is received, the at least first character of the first message is sent to be displayed on the second mobile device of the second user substantially simultaneously as the at least first character is input by the first user. The at least first character is sent without the first user pressing a send button or otherwise expressly issuing a send command.


A 2-dimensional grating generates multi-mode light from two or more single-mode inputs. One or more waveguides couple the light from the single-mode inputs to the 2-dimensional grating. The 2-dimensional grading couples and transmits the generated multi-mode light to an optical fiber configured to support multiple modes.


Patent
Beam Inc | Date: 2016-05-06

A multi-mode optical fiber includes alternating cores have positive and negative differential mode delays over a range of wavelengths.


Patent
Beam Inc | Date: 2016-04-13

The time-averaged ion beam profile of an ion beam for implanting ions on a work piece may be smoothed to reduce noise, spikes, peaks, and the like and to improve dosage uniformity. Auxiliary magnetic field devices, such as electromagnets, may be located along an ion beam path and may be driven by periodic signals to generate a fluctuating magnetic field to smooth the ion beam profile (i.e., beam current density profile). The auxiliary magnetic field devices may be positioned outside the width and height of the ion beam, and may generate a non-uniform fluctuating magnetic field that may be strongest near the center of the ion beam where the highest concentration of ions may be positioned. The fluctuating magnetic field may cause the beam profile shape to change continuously, thereby averaging out noise over time.


Patent
Beam Inc | Date: 2015-06-26

A method for an ion implantation is provided. First, a non-parallel ion beam is provided. Thereafter, a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively. Particularly, when at least one three-dimensional structure is located on the upper surface of the workpiece, both the top surface and the side surface of the three-dimensional structure may be implanted properly by the non-parallel ion beam when the workpiece is moved across the non-parallel ion beam one and only one times. Herein, the non-parallel ion beam can be a divergent ion beam or a convergent ion beam (both may be viewed as the integrated divergent beam), also can be generated directly from an ion source or is modified from a parallel ion beam, a divergent ion beam or a convergent ion beam.

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