Lincoln, United Kingdom
Lincoln, United Kingdom

Dynex Semiconductor based in Lincoln, England, United Kingdom is a global supplier of products and services specialising in the field of power semiconductor devices and silicon on sapphire integrated circuit products. The power products they manufacture include IGBTs, various types of thyristor and GTOs. Wikipedia.


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Grant
Agency: GTR | Branch: Innovate UK | Program: | Phase: Collaborative Research & Development | Award Amount: 643.30K | Year: 2014

The improvement of the UKs energy infrastructure is critical moving into a low carbon economy. A paradigm shift in technology will be required in order to cope effectively with an ever increasing amount of renewable energy being brought online. The UK has committed to connecting 32,000 MW of offshore wind power by the year 2030 in an effort to meet ambitious (low) carbon emissions targets. It is envisaged that other forms of renewable energy e.g. tidal, solar could also play a role alongside traditional coal fired power stations and nuclear energy generation. Revolutionary changes to large (multi gigawatt) scale power conversion is indispensable if these carbon emissions targets are to be met. The objective is to enable a step change in power conversion, transmission and distribution through silicon carbide (SiC) power electronics. This will be achieved by bringing together world leading companies and academics in the fields of high voltage power electronics, semiconductor technology and power generation, transmission and distribution. The consortium will build upon existing materials knowledge, attained through academic research to deliver the project.


Grant
Agency: Cordis | Branch: FP7 | Program: BSG-SME | Phase: SME-2011-1 | Award Amount: 1.50M | Year: 2011

Through a mixture of applied research and development, the Uni-Pack project will deliver technologies to reduce the manufacturing costs and improve the performance of plastic packaged IGBT (Insulated gate bipolar transistor) modules, in particular those for use in Voltage Source Converters (VSC) for High Voltage Direct Current (HVDC) power transmission. VSC technology enables efficient access to renewable energy sources and economic connection to the electric utilities grid. Trade studies have identified target IGBT module performance parameters for the HVDC market sector and the need to address the influence of gate drive strategies on converter cell/ module performance. Tailoring of IGBT structures for on-state/ switching loss trade-off across each market sector will be demonstrated and applied to develop 4.5KV enhanced DMOS and /or trench IGBT die exhibiting optimum performance for HVDC transmission. Applied research into a high thermal performance low profile package, designed for low inductance and having fully bonded interconnects will deliver step improvements in performance / reliability and reduced manufacturing cost. An important characteristic of the package will be its capability to fail to short circuit, a feature which is highly beneficial in reducing the system costs. A VSC system is currently in the design stage using standard IGBT modules and this will be used as a benchmark to demonstrate and quantify the degree of success.


Wei J.,Hong Kong University of Science and Technology | Jiang H.,Dynex Semiconductor | Jiang Q.,Zhuzhou CRRC Times Electrical Co. | Chen K.J.,Hong Kong University of Science and Technology
IEEE Transactions on Electron Devices | Year: 2016

A GaN/SiC hybrid field-effect transistor (HyFET) is proposed as a high-voltage power device that provides a high-mobility lateral AlGaN/GaN channel to reduce the channel resistance and a vertical SiC drift region to sustain the high OFF-state voltage. The performance of the HyFET is evaluated by numerical device simulations. Compared with the conventional SiC MOSFET, the HyFET exhibits a greatly reduced $R-{\mathrm{\scriptscriptstyle ON}}$ together with a low $C-{\mathrm{ GD}}$ and low gate charges. The figures of merit $Q-{\mathrm{ G}}\times R-{\mathrm{\scriptscriptstyle ON}}$ and $Q-{\mathrm{ GD}}\times R-{\mathrm{\scriptscriptstyle ON}}$ of the HyFET are dramatically improved. © 1963-2012 IEEE.


Musallam M.,Dynex Semiconductor | Yin C.,University of Greenwich | Bailey C.,University of Greenwich | Johnson M.,University of Nottingham
IEEE Transactions on Power Electronics | Year: 2014

Power electronics are efficient for conversion and conditioning of the electrical energy through a wide range of applications. Proper life consumption estimation methods applied for power electronics that can operate in real time under in-service mission profile conditions will not only provide an effective assessment of the products life expectancy but they can also deliver reliability design information. This is important to aid in manufacturing and thus helps in reducing costs and maximizing through-life availability. In this paper, a mission profile-based approach for real-time life consumption estimation which can be used for reliability design of power electronics is presented. The paper presents the use of electrothermal models coupled with physics-of-failure analysis by means of real-time counting algorithm to provide accurate life consumption estimations for power modules operating under in-service conditions. These models, when driven by the actual mission profiles, can be utilized to provide advanced warning of failures and thus deliver information that can be useful to meet particular application requirements for reliability at the design stage. To implement this approach, an example of two case studies using mission profiles of a metro-system and wind-turbines applications is presented. © 1986-2012 IEEE.


Wang Y.,Dynex Semiconductor | Jones S.,Dynex Semiconductor | Chamund D.,Dynex Semiconductor | Liu G.,Dynex Semiconductor
PCIM Europe Conference Proceedings | Year: 2013

Lifetime models are proposed for estimating power IGBT module lifetime by power cycling tests. In this work, we develop a series of analytical models for IGBT modules power cycling lifetime prediction, which are based on the actual test data of samples packaged by conventional concept, AlN substrate and AlSiC base plate. The models are different for wire bonds, die solder joints and substrate solder joints. By using these models and the application mission profile, lifetime of an IGBT module can be predicted at the design stages. © VDE VERLAG GMBH · Berlin · Offenbach.


Xu F.,University of Exeter | Fahmi A.,Rhine-Waal University of Applied Sciences | Zhao Y.,Dynex Semiconductor | Xia Y.,University of Exeter | Zhu Y.,University of Exeter
Nanoscale | Year: 2012

This manuscript first describes a simple synthesis of tungsten oxide (WOx) nanorods from templated W foil using a chemical vapour deposition (CVD) technique at 600-750 °C, then presents the formation of tungsten oxynitride (WOxNy) nanorods via nitridation at 650 °C for different reaction times. The W foil, blade engraved, acid etched, or spin coated with Au-block copolymer composites then plasma etched, was used as a substrate for the nanorod growth. The Au patterns that were created on the surface of a W foil following the removal of the copolymer, led to a reverse patterned growth of WOx nanorods on the Au free areas. Consequently, following the oxide-to-nitride conversion, WOxN y nanorods were obtained with an identical patterned feature as to that of the parental WOx. Combined techniques including XRD, SEM, TEM and Raman were used to visualise and analyse the resulting WOx and WOxNy nanorods. The diameter, length, and chemical composition of the nanorods are found to vary with reaction time and temperatures, as well as different substrate pre-treatments. This result represents a simple, innovative and efficient process for reverse-patterned growth of new nanomaterials. © 2012 The Royal Society of Chemistry.


Grant
Agency: Cordis | Branch: FP7 | Program: JTI-CS | Phase: JTI-CS-2011-3-SGO-02-014 | Award Amount: 246.42K | Year: 2012

The objective of this proposal is to develop double side cooled packaging solutions for semiconductors eliminating the use of inherently unreliable aluminium wire bonds and replacing with seamless contacting techniques to either side of the active semiconductor thereby providing a very reliable low thermal resistance,low inductance contact . The solutions developed using innovative additive laser machining and lost wax techniques will be applicable to not only todays active components but tomorrows.Theconstructional methods developed to package the active devices will be inherently low cost compared to those associated with todays double side cooled structures. The double side cooled structures emanating out of this project will be extremely manufacturable and will offer the ultimate in longterm reliability required by the aerospace industry and will facilitate the use of higher temeprature devices operating at higher current densities and frequencies i.e SiC. In the event of system over currents the devices designed within the project are intended to fail short circuit . The ability for Europe to have an indigenous semiconductor supplier able to supply advanced components packaged in a unique thermal efficient, compact and reliable manner will give the EUs systems suppliers a significant competitive edge in aerospace and other advanced applications. A 10KW silicon carbide inverter based on specification supplied by the SGOs is envisaged.


Grant
Agency: Cordis | Branch: H2020 | Program: RIA | Phase: MG-1.1-2014 | Award Amount: 7.18M | Year: 2015

Increasingly demanding requirements in the transportation industry for higher efficiency and reduced carbon footprint are leading to an ever increasing interest in electrically operated drives which offer significant benefits over their pneumatic or hydraulic counterparts. More electric aircraft technologies with fully electrical actuation and environmental conditioning systems are moving from topics of academic interest to commercial applications. Despite the progress in power electronics and electrical drives, significant advances in power density and reliability are still required before electrical technologies are fully accepted in the aircraft industry. The thermal management of losses generated in the power converters, with the associated requirements for heavy cooling systems, is proving to be the stumbling block for further improvements in power density. Ground-breaking advances in wide band-gap semiconductor materials are promising to deliver significant benefits to power conversion systems with unprecedented levels of power density thanks to considerably reduced losses and high temperature operation, making them ideal building blocks for aerospace power electronics. Leveraging on some of EU best expertise in device manufacture and packaging, components integration, thermal management, converters design, reliability analysis, control and condition monitoring, as well as aircraft power systems, the proposal will demonstrate significant advances of the state of the art in power converters for harsh environments. Innovative 3D device packaging based on planar interconnect technologies with double-sided integrated cooling, will be demonstrated for wide band-gap wire-bond free power semiconductor devices. These technological breakthroughs, coupled with novel methodologies for active thermal management, lifetime testing, health management and prognosis will contribute to unprecedented levels of power density, efficiency and reliability in aerospace application


Grant
Agency: GTR | Branch: Innovate UK | Program: | Phase: Collaborative Research & Development | Award Amount: 427.95K | Year: 2015

The advantages brought by Hybrid and Electric Vehicles (HEV/EV) such as being environmentally friendly, less dependent on fossil fuels, cost effective in long term operation etc, HEV/EV has highly focused governments and car manufacturers. Power control is essential in HEV/EV powertrain systems of which the core part is the power IGBT modules. The requirements of modules are strict in electrical and thermal performance, efficiency and reliability. In this project, a power IGBT module incorporating intelligent driver, efficient thermal management concept and advanced packaging technologies for HEV/EV is developed. By combining Dynex Semiconductors leading expertise in power semiconductors and the University of Nottinghams cutting edge research in enhanced heat transfer and cooling. A new power IGBT module with a flat heat pipe baseplate and intelligent gate driver using advanced bonding and joining technologies such as copper wires, silver sintering and ultrasonic welding will be developed. The module increases heat transfer efficiency by 20% compared with pin fin structures and simplifies cooling system by removing costly, unreliable parts and enhancing efficiency.


Grant
Agency: Cordis | Branch: FP7 | Program: JTI-CS | Phase: JTI-CS-2010-3-SGO-02-019 | Award Amount: 499.57K | Year: 2011

Power Module Reliability (PEMREL) addresses the clean skys call Sample PEM (Power Electronic Module) construction for testing, characterisation and manufacturability assessment. This proposal aims to compliment other research into the development of an all SiC 10kW inverter, implemented in a double-side cooled, non-hermetic sandwich packaging technology (no bondwires), able to withstand a nominal ambient temperature range of -60C to \200C. Key developments will include FMMEA, and the development of physics-of-failure reliability models for both type 1 & 2 modules. These modules will be tested for electrical and thermal chracterisation. Power and passive cycling of the modules will be undertaken to generate reliability data for validating the developed reliability models.

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