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Lincoln, United Kingdom

Dynex Semiconductor based in Lincoln, England, United Kingdom is a global supplier of products and services specialising in the field of power semiconductor devices and silicon on sapphire integrated circuit products. The power products they manufacture include IGBTs, various types of thyristor and GTOs. Wikipedia.


Musallam M.,Dynex Semiconductor | Yin C.,University of Greenwich | Bailey C.,University of Greenwich | Johnson M.,University of Nottingham
IEEE Transactions on Power Electronics | Year: 2014

Power electronics are efficient for conversion and conditioning of the electrical energy through a wide range of applications. Proper life consumption estimation methods applied for power electronics that can operate in real time under in-service mission profile conditions will not only provide an effective assessment of the products life expectancy but they can also deliver reliability design information. This is important to aid in manufacturing and thus helps in reducing costs and maximizing through-life availability. In this paper, a mission profile-based approach for real-time life consumption estimation which can be used for reliability design of power electronics is presented. The paper presents the use of electrothermal models coupled with physics-of-failure analysis by means of real-time counting algorithm to provide accurate life consumption estimations for power modules operating under in-service conditions. These models, when driven by the actual mission profiles, can be utilized to provide advanced warning of failures and thus deliver information that can be useful to meet particular application requirements for reliability at the design stage. To implement this approach, an example of two case studies using mission profiles of a metro-system and wind-turbines applications is presented. © 1986-2012 IEEE. Source


Grant
Agency: Cordis | Branch: FP7 | Program: BSG-SME | Phase: SME-2011-1 | Award Amount: 1.50M | Year: 2011

Through a mixture of applied research and development, the Uni-Pack project will deliver technologies to reduce the manufacturing costs and improve the performance of plastic packaged IGBT (Insulated gate bipolar transistor) modules, in particular those for use in Voltage Source Converters (VSC) for High Voltage Direct Current (HVDC) power transmission. VSC technology enables efficient access to renewable energy sources and economic connection to the electric utilities grid. Trade studies have identified target IGBT module performance parameters for the HVDC market sector and the need to address the influence of gate drive strategies on converter cell/ module performance. Tailoring of IGBT structures for on-state/ switching loss trade-off across each market sector will be demonstrated and applied to develop 4.5KV enhanced DMOS and /or trench IGBT die exhibiting optimum performance for HVDC transmission. Applied research into a high thermal performance low profile package, designed for low inductance and having fully bonded interconnects will deliver step improvements in performance / reliability and reduced manufacturing cost. An important characteristic of the package will be its capability to fail to short circuit, a feature which is highly beneficial in reducing the system costs. A VSC system is currently in the design stage using standard IGBT modules and this will be used as a benchmark to demonstrate and quantify the degree of success.


Grant
Agency: GTR | Branch: Innovate UK | Program: | Phase: Department of Trade & Industry | Award Amount: 247.84K | Year: 2006

Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.


Grant
Agency: GTR | Branch: Innovate UK | Program: | Phase: Collaborative Research & Development | Award Amount: 300.62K | Year: 2005

Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.


Grant
Agency: Cordis | Branch: FP7 | Program: JTI-CS | Phase: JTI-CS-2011-3-SGO-02-014 | Award Amount: 246.42K | Year: 2012

The objective of this proposal is to develop double side cooled packaging solutions for semiconductors eliminating the use of inherently unreliable aluminium wire bonds and replacing with seamless contacting techniques to either side of the active semiconductor thereby providing a very reliable low thermal resistance,low inductance contact . The solutions developed using innovative additive laser machining and lost wax techniques will be applicable to not only todays active components but tomorrows.Theconstructional methods developed to package the active devices will be inherently low cost compared to those associated with todays double side cooled structures. The double side cooled structures emanating out of this project will be extremely manufacturable and will offer the ultimate in longterm reliability required by the aerospace industry and will facilitate the use of higher temeprature devices operating at higher current densities and frequencies i.e SiC. In the event of system over currents the devices designed within the project are intended to fail short circuit . The ability for Europe to have an indigenous semiconductor supplier able to supply advanced components packaged in a unique thermal efficient, compact and reliable manner will give the EUs systems suppliers a significant competitive edge in aerospace and other advanced applications. A 10KW silicon carbide inverter based on specification supplied by the SGOs is envisaged.

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