Vishwakarma S.R.,Dr vadh University |
Kumar A.,Dr vadh University |
Das S.,Dr vadh University |
Verma A.K.,Dr vadh University |
Tripathi R.S.N.,Dr vadh University
Chalcogenide Letters | Year: 2013
The nano crystalline semiconducting thin films of n-CdSe having different thicknesses have been fabricated on glass substrate at room temperature by electron beam evaporation technique using optimized source material. Thicknesses of the n-CdSe thin films are in the range of 600nm to 1200nm. The variations of electrical, optical and structural properties of n-CdSe thin films with thickness have been studied. The structural property of thin films has studied by X-ray diffractometer which reveals that films have polycrystalline hexagonal structure with preferred orientation (002) plane. The surface morphology of films has also been studied by scanning electron microscope. The morphological and crystalline studies revealed that the thin film surface and crystallinity of the grains in films were improved with increase of film thickness. The optical band gaps are calculated for films using absorption coefficient. The electrical resistivity and activation energy of n-CdSe thin films are calculated by four probe resistivity measurement. The carrier concentration and Hall mobility of n-CdSe thin films are calculated by Hall measurement. The dependence of electrical parameters of n-CdSe films on thickness has also been studied. Thus the thickness of n-CdSe thin film 1000 nm is optimized on the basis of structural, optical and electrical properties.