Ulsan, South Korea
Ulsan, South Korea

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Patent
Hyundai Motor Company, Nifco Inc and Dongkook Ind. Co. | Date: 2014-11-07

An apparatus for opening and closing a sliding armrest console may include having a console body, an opening and closing plate rotatably secured to an upper portion of the console body to thereby open and close an upper surface of the console body, and an armrest slid from the opening and closing plate, may include a hook provided to a front end portion of the opening and closing plate and controlling opening and closing of the opening and closing plate from the console body, and a locking unit provided to the armrest, controlling a sliding operation of the armrest by a rotation operation and operating the hook together with the controlling of the sliding operation of the armrest at the same time.


Patent
Hyundai Motor Company, Nifco Inc and Dongkook Ind. Co. | Date: 2014-10-28

An armrest lock may include a lever coupled to one side of the sliding cover, a rod provided in the sliding cover such that one side thereof is coupled to the lever, a trigger coupled to the other side of the rod and configured to operate in response to a motion of the lever, and a locking element coupled to the opening door and the armrest body and configured to be unlocked from at least one of the opening door and the armrest body when coming into contact with the trigger.


Patent
Hyundai Motor Company, Hyundai Mobis, Dongkook Ind. Co. and Kia Motors | Date: 2013-10-23

A multibox for vehicles includes a housing, a sliding plate, a cover and a knob unit. The housing has a receiving space for receiving articles. The sliding plate is disposed around the housing to translate forward and rearward by a force of a spring of the housing. The cover finishes a front surface of the receiving space of the housing and is supported on the sliding plate by a hinge structure though hinge arms thereof. The cover is rotated upward and downward by a force of a spring. The knob unit is disposed at one side of a front surface of the housing to lock or unlock the housing and the cover through a pushing operation. The multibox is opened and closed by translation of the sliding plate and rotation of the cover.


Kim S.-K.,University of Ulsan | Kim S.-Y.,University of Ulsan | Kim S.-H.,University of Ulsan | Jeon J.-H.,University of Ulsan | And 4 more authors.
Transactions on Electrical and Electronic Materials | Year: 2013

100 nm thick Ga doped ZnO (GZO) thin films were deposited with DC and RF magnetron sputtering at room temperature on glass substrate and Al coated glass substrate, respectively. and the effect of the Al underlayer on the optical and electrical properties of the GZO films was investigated. As-deposited GZO single layer films had an optical transmittance of 80% in the visible wavelength region, and sheet resistance of 1,516 Ω/□, while the optical and electrical properties of GZO/Al bi-layered films were influenced by the thickness of the Al buffer layer. GZO films with 2 nm thick Al film show a lower sheet resistance of 990 Ω/□, and an optical transmittance of 78%. Based on the figure of merit (FOM), it can be concluded that the thin Al buffer layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process. © 2013 KIEEME. All rights reserved.


Kim S.-K.,University of Ulsan | Kim S.-Y.,University of Ulsan | Kim S.-H.,University of Ulsan | Jeon J.-H.,University of Ulsan | And 4 more authors.
Transactions on Electrical and Electronic Materials | Year: 2014

100 nm thick Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on polyethylene terephthalate (PET) and ZnO coated PET substrate and then the effect of the ZnO thickness on the optical and electrical properties of the GZO films was investigated. GZO single layer films had an optical transmittance of 83.7% in the visible wavelength region and a sheet resistance of 2.41 Ω/□, while the optical and electrical properties of the GZO/ZnO bi-layered films were influenced by the thickness of the ZnO buffer layer. GZO films with a 20 nm thick ZnO buffer layer showed a lower sheet resistance of 1.45 Ω/□ and an optical transmittance of 85.9%. As the thickness of ZnO buffer layer in GZO/ZnO bi-layered films increased, both the conductivity and optical transmittance in the visible wavelength region were increased. Based on the figure of merit (FOM), it can be concluded that the ZnO buffer layer effectively increases the optical and electrical performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process. © 2014 KIEEME. All rights reserved.


Jeon J.-H.,University of Ulsan | Gong T.-K.,University of Ulsan | Kim S.-K.,University of Ulsan | Kim S.-H.,University of Ulsan | And 4 more authors.
Journal of Alloys and Compounds | Year: 2015

Abstract Ga-doped ZnO (GZO) and GZO/Ni bi-layered films were prepared on polycarbonate (PC) substrates by DC and RF magnetron sputtering at room temperature in order to determine the influence of a Ni buffer layer on the structural, optical, and electrical properties of the GZO/Ni films. The thickness of the Ni buffer layer was varied between 2 and 5 nm. As-deposited GZO films that contained the PC substrate show an average optical transmittance of 81.3% in the visible wavelength region and an electrical resistivity of 3.1 × 10-3 Ω cm, while GZO/Ni bi-layered films show different optical and electrical properties that are dependent on the thickness of the Ni buffer layer. Although the GZO 100 nm/Ni 5 nm films possessed the lowest electrical resistivity (7.3 × 10-4 Ω cm) and the largest grain size (16 nm) in this study, GZO 100 nm/Ni 2 nm films showed best optoelectrical performance among the films. This superiority was due to the simultaneous optimization of the optical and electrical properties. © 2015 Elsevier B.V. All rights reserved.


Kim S.-K.,University of Ulsan | Kim S.-H.,University of Ulsan | Kim S.-Y.,University of Ulsan | Jeon J.-H.,University of Ulsan | And 4 more authors.
Ceramics International | Year: 2014

Ga-doped ZnO (GZO)/ZnO bi-layered films were deposited on glass substrates by radio frequency magnetron sputtering at different substrate temperatures of 100, 200 and 300 C to investigate the effects of substrate temperature on the structural, electrical, and optical properties of the films. Thicknesses of the GZO and ZnO buffer layer were kept constant at 85 and 15 nm by controlling the deposition times. The films deposited at room temperature had a relatively low optical transmittance of 80.5%, while films deposited at substrate temperature of 300 C showed a higher transmittance of 84.5% compared to the other films. Electrical resistivity of the films was also influenced by substrate temperature and the lowest resistivity of 2.7×10-3 Ω cm was observed for films deposited at 300 C. The observed result means that increasing the substrate temperature enhanced the optical transmittance and electrical conductivity of GZO/ZnO bi-layered films, simultaneously. © 2013 Elsevier Ltd and Techna Group S.r.l.All rights reserved.

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