Daejeon, South Korea
Daejeon, South Korea

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Patent
Dongbu HiTek Co. | Date: 2016-03-21

An apparatus can include a test power supplier comprising a power supply to sense resistance between electrodes of a touch sensor, and a comparison unit configured to compare the sensed resistance between the electrodes with an allowable threshold to output a comparison result.


Patent
Dongbu Hitek Co. | Date: 2016-10-27

A bipolar junction transistor includes a first well region having a first conductive type, a second well region disposed adjacent to the first well region and having a second conductive type, a base disposed on the first well region and having the first conductive type, an emitter disposed on the first well region and having the second conductive type, and a collector disposed on the second well region and having the second conductive type. The first well region comprises a first impurity region and a second impurity region having an impurity concentration lower than that of the first impurity region. The base is disposed on the first impurity region, and the emitter is disposed on the second impurity region.


Patent
Dongbu Hitek Co. | Date: 2016-12-08

An image sensor includes a first charge storage region of a first conductive type disposed in a substrate, a second charge storage region of a second conductive type disposed on one side of the first charge storage region, a first floating diffusion region spaced apart from the first charge storage region, a second floating diffusion region spaced apart from the second charge storage region, a first transfer gate disposed on the substrate between the first charge storage region and the first floating diffusion region, and a second transfer gate disposed on the substrate between the second charge storage region and the second floating diffusion region.


Patent
Dongbu Hitek Co. | Date: 2016-12-06

A bipolar junction transistor includes a first well region having a first conductive type, a second well region disposed adjacent to the first well region and having a second conductive type, an emitter disposed on the first well region and having the second conductive type, a base disposed on the first well region and having the first conductive type, a collector disposed on the second well region and having the second conductive type, and device isolation regions disposed among the emitter, the base and the collector. Particularly, the emitter, the base and the collector are spaced apart from the device isolation regions.


A semiconductor device includes a high resistivity substrate, a first deep well region having a first conductive type and formed in the high resistivity substrate, a second deep well region having a second conductive type and formed on the first deep well region, a first well region having the first conductive type and formed on the second deep well region, and a transistor formed on the first well region.


A semiconductor device includes a high resistivity substrate, a transistor formed on the high resistivity substrate, and a deep trench device isolation region formed in the high resistivity substrate to surround the transistor. Particularly, the high resistivity substrate has a first conductive type, and a deep well region having a second conductive type is formed in the high resistivity substrate. Further, a low concentration well region having the first conductive type is formed on the deep well region, and the transistor is formed on the low concentration well region.


Patent
Dongbu HiTek Co. | Date: 2016-02-16

A touch sensor is disclosed. The touch sensor includes a touch panel including a plurality of sensing nodes in columns and rows and sensing lines connected to the sensing nodes, a touch sensing unit configured to provide a driving signal to at least one of sensing lines to charge at least one of the sensing nodes during a first time period and discharge voltages on the sensing nodes during a second period, and a charge sharer or equalizer configured to short-circuit the sensing lines during the second time period.


In embodiments, a radio frequency (RF) module includes an RF switching device, an RF active device, a passive device and a control device formed on a high resistivity substrate. The passive device can include a shallow trench device isolation region having a plate shape and formed at a surface portion of the high resistivity substrate, deep trench device isolation regions extending downward from a lower surface of the shallow trench device isolation region so as to define at least one isolated region therebetween, at least one insulating layer formed on the high resistivity substrate, and at least one passive component formed on the insulating layer.


In embodiments, a semiconductor device includes a high resistivity substrate, a transistor disposed on the high resistivity substrate, and a deep trench device isolation region disposed in the high resistivity substrate to surround the transistor. Particularly, the high resistivity substrate has a first conductive type, and a deep well region having a second conductive type is disposed in the high resistivity substrate. Further, a first well region having the first conductive type is disposed on the deep well region, and the transistor is disposed on the first well region.


In embodiments, a high voltage semiconductor device includes a gate structure disposed on a substrate, a source region disposed at a surface portion of the substrate adjacent to one side of the gate structure, a drift region disposed at a surface portion of the substrate adjacent to another side of the gate structure, a drain region disposed at a surface portion of the drift region spaced from the gate structure, and an electrode structure disposed on the drift region to generate a vertical electric field between the gate structure and the drain region.

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