Dongbu HiTek Co.

Daejeon, South Korea

Dongbu HiTek Co.

Daejeon, South Korea
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Patent
Dongbu HiTek Co. | Date: 2016-10-13

An image sensor includes a pixel array including a plurality of unit pixels in a matrix including rows and columns. The matrix being divided into a plurality of groups and each of the plurality of groups includes two or more different columns, a binning sampling unit configured to sample outputs of unit pixels in each of the plurality of groups and output binning sampling signals, and an analog-digital conversion block including first and second analog-digital conversion units corresponding to the columns. The first analog-digital conversion units convert the binning sampling signals. When the first analog-digital conversion units convert the binning sampling signals, the second analog-digital conversion units are turned off.


Patent
Dongbu Hitek Co. | Date: 2017-01-24

In embodiments, a semiconductor gas sensor includes a substrate having a cavity, a first insulation layer formed on the substrate, including an exposure hole formed at a position corresponding to the cavity and a peripheral portion of the cavity, a second insulation layer formed on the first insulation layer, covering the exposure hole, a heating electrode formed on the second insulation layer, being formed at a position corresponding to the cavity, a sensing electrode formed over the heating electrode, being electrically insulated from the heating electrode and a detection layer covering the sensing electrode, being capable of having a variable resistance when acting with a predetermined kind of gas.


A backside illuminated image sensor includes a substrate having a frontside surface and a backside surface, a photodiode disposed in the substrate, an insulating layer disposed on the backside surface and a fixed charge layer disposed on the insulating layer. A charge accumulation region capable of being used as a backside pinning layer is formed between the photodiode and the backside surface of the substrate by the fixed charge layer.


Patent
Dongbu HiTek Co. | Date: 2016-03-21

An apparatus can include a test power supplier comprising a power supply to sense resistance between electrodes of a touch sensor, and a comparison unit configured to compare the sensed resistance between the electrodes with an allowable threshold to output a comparison result.


A touch sensor is disclosed. The touch sensor includes a touch panel including sensing nodes arranged in a matrix form and sensing lines connected to the sensing nodes, a touch sensing unit for providing driving signals for driving the sensing nodes, and a selector including a plurality of multiplexers for selectively providing the driving signals provided from the touch sensing unit to the sensing lines of the touch panels, wherein each of the multiplexers is selectively connected to two or more corresponding sensing nodes among the sensing nodes, and the two or more sensing nodes of the touch panel, selectively connected to each of the multiplexers, are positioned at different columns and rows.


Patent
Dongbu Hitek Co. | Date: 2016-10-27

A bipolar junction transistor includes a first well region having a first conductive type, a second well region disposed adjacent to the first well region and having a second conductive type, a base disposed on the first well region and having the first conductive type, an emitter disposed on the first well region and having the second conductive type, and a collector disposed on the second well region and having the second conductive type. The first well region comprises a first impurity region and a second impurity region having an impurity concentration lower than that of the first impurity region. The base is disposed on the first impurity region, and the emitter is disposed on the second impurity region.


Patent
Dongbu Hitek Co. | Date: 2016-12-08

An image sensor includes a first charge storage region of a first conductive type disposed in a substrate, a second charge storage region of a second conductive type disposed on one side of the first charge storage region, a first floating diffusion region spaced apart from the first charge storage region, a second floating diffusion region spaced apart from the second charge storage region, a first transfer gate disposed on the substrate between the first charge storage region and the first floating diffusion region, and a second transfer gate disposed on the substrate between the second charge storage region and the second floating diffusion region.


Patent
Dongbu Hitek Co. | Date: 2016-12-06

A bipolar junction transistor includes a first well region having a first conductive type, a second well region disposed adjacent to the first well region and having a second conductive type, an emitter disposed on the first well region and having the second conductive type, a base disposed on the first well region and having the first conductive type, a collector disposed on the second well region and having the second conductive type, and device isolation regions disposed among the emitter, the base and the collector. Particularly, the emitter, the base and the collector are spaced apart from the device isolation regions.


A semiconductor device includes a high resistivity substrate, a first deep well region having a first conductive type and formed in the high resistivity substrate, a second deep well region having a second conductive type and formed on the first deep well region, a first well region having the first conductive type and formed on the second deep well region, and a transistor formed on the first well region.


Patent
Dongbu HiTek Co. | Date: 2016-02-16

A touch sensor is disclosed. The touch sensor includes a touch panel including a plurality of sensing nodes in columns and rows and sensing lines connected to the sensing nodes, a touch sensing unit configured to provide a driving signal to at least one of sensing lines to charge at least one of the sensing nodes during a first time period and discharge voltages on the sensing nodes during a second period, and a charge sharer or equalizer configured to short-circuit the sensing lines during the second time period.

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