Daejeon, South Korea
Daejeon, South Korea

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Patent
Dongbu HiTek Co. | Date: 2016-03-21

An apparatus can include a test power supplier comprising a power supply to sense resistance between electrodes of a touch sensor, and a comparison unit configured to compare the sensed resistance between the electrodes with an allowable threshold to output a comparison result.


A touch sensor is disclosed. The touch sensor includes a touch panel including sensing nodes arranged in a matrix form and sensing lines connected to the sensing nodes, a touch sensing unit for providing driving signals for driving the sensing nodes, and a selector including a plurality of multiplexers for selectively providing the driving signals provided from the touch sensing unit to the sensing lines of the touch panels, wherein each of the multiplexers is selectively connected to two or more corresponding sensing nodes among the sensing nodes, and the two or more sensing nodes of the touch panel, selectively connected to each of the multiplexers, are positioned at different columns and rows.


A semiconductor device includes a high resistivity substrate, a first deep well region having a first conductive type and formed in the high resistivity substrate, a second deep well region having a second conductive type and formed on the first deep well region, a first well region having the first conductive type and formed on the second deep well region, and a transistor formed on the first well region.


A semiconductor device includes a high resistivity substrate, a transistor formed on the high resistivity substrate, and a deep trench device isolation region formed in the high resistivity substrate to surround the transistor. Particularly, the high resistivity substrate has a first conductive type, and a deep well region having a second conductive type is formed in the high resistivity substrate. Further, a low concentration well region having the first conductive type is formed on the deep well region, and the transistor is formed on the low concentration well region.


Patent
Dongbu HiTek Co. | Date: 2016-02-16

A touch sensor is disclosed. The touch sensor includes a touch panel including a plurality of sensing nodes in columns and rows and sensing lines connected to the sensing nodes, a touch sensing unit configured to provide a driving signal to at least one of sensing lines to charge at least one of the sensing nodes during a first time period and discharge voltages on the sensing nodes during a second period, and a charge sharer or equalizer configured to short-circuit the sensing lines during the second time period.


In embodiments, a radio frequency (RF) module includes an RF switching device, an RF active device, a passive device and a control device formed on a high resistivity substrate. The passive device can include a shallow trench device isolation region having a plate shape and formed at a surface portion of the high resistivity substrate, deep trench device isolation regions extending downward from a lower surface of the shallow trench device isolation region so as to define at least one isolated region therebetween, at least one insulating layer formed on the high resistivity substrate, and at least one passive component formed on the insulating layer.


In embodiments, a semiconductor device includes a high resistivity substrate, a transistor disposed on the high resistivity substrate, and a deep trench device isolation region disposed in the high resistivity substrate to surround the transistor. Particularly, the high resistivity substrate has a first conductive type, and a deep well region having a second conductive type is disposed in the high resistivity substrate. Further, a first well region having the first conductive type is disposed on the deep well region, and the transistor is disposed on the first well region.


In embodiments, a high voltage semiconductor device includes a gate structure disposed on a substrate, a source region disposed at a surface portion of the substrate adjacent to one side of the gate structure, a drift region disposed at a surface portion of the substrate adjacent to another side of the gate structure, a drain region disposed at a surface portion of the drift region spaced from the gate structure, and an electrode structure disposed on the drift region to generate a vertical electric field between the gate structure and the drain region.


Patent
Dongbu Hitek Co. | Date: 2015-05-15

Disclosed is an image sensor that includes a pixel array including a plurality of unit pixels in a matrix having rows and columns, a binning sampling unit configured to (i) amplify with different gains signals from unit pixels selected from the unit pixels in each of the columns, and (ii) output a binning sampling signal according to an average of the amplified signals, and an analog-to-digital converter configured to convert the binning sampling signal to a digital signal.


Patent
Dongbu HiTek Co. | Date: 2015-04-13

Disclosed is an image sensor. The disclosed image sensor includes a pixel array including a plurality of unit pixels arranged in a matrix form having rows and columns, a binning sampling unit configured to output a binning sampling signal according to an average of signals from two or more unit pixels selected from among the unit pixels of each of the columns, and an analog-to-digital converter configured to convert the binning sampling signal to a digital signal. The selected unit pixels have different exposure times.

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