Daejeon, South Korea
Daejeon, South Korea

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Provided are a novel amino-silyl amine compound and a manufacturing method of a dielectric film containing SiN bond using the same. Since the amino-silyl amine compound according to the present invention, which is a thermally stable and highly volatile compound, may be treated at room temperature and used as a liquid state compound at room temperature and pressure, the present invention provides a manufacturing method of a high purity dielectric film containing a SiN bond even at a low temperature and plasma condition by using atomic layer deposition (PEALD).

Inspired by biological systems, many biomimetic methods suggest fabrication of functional materials with unique physicochemical properties. Such methods frequently generate organic–inorganic composites that feature highly ordered hierarchical structures with intriguing properties, distinct from their individual components. A striking example is that of DNA–inorganic hybrid micro/nanostructures, fabricated by the rolling circle technique. Here, a novel concept for the encapsulation of bioactive proteins in DNA flowers (DNF) while maintaining the activity of protein payloads is reported. A wide range of proteins, including enzymes, can be simultaneously associated with the growing DNA strands and Mg PPi crystals during the rolling circle process, ultimately leading to the direct immobilization of proteins into DNF. The unique porous structure of this construct, along with the abundance of Mg ions and DNA molecules present, provides many interaction sites for proteins, enabling high loading efficiency and enhanced stability. Further, as a proof of concept, it is demonstrated that the DNF can deliver payloads of cytotoxic protein (i.e., RNase A) to the cells without a loss in its biological function and structural integrity, resulting in highly increased cell death compared to the free protein.

Jeong Y.,Durham University | Pearson C.,Durham University | Kim H.-G.,DNF Co. | Park M.-Y.,DNF Co. | And 3 more authors.
RSC Advances | Year: 2015

We report on the lowerature formation (180 °C) of a SiO2 dielectric layer from solution-processed perhydropolysilazane. A bottom-gate zinc oxide thin-film transistor has subsequently been fabricated that possesses a carrier mobility of 3 cm2 V s-1, an on/off ratio of 107 and minimal hysteresis in its transfer and output characteristics. © 2015 The Royal Society of Chemistry.

PubMed | Electronics and Telecommunications Research Institute, Durham University, DNF Co. and Kyung Hee University
Type: Journal Article | Journal: ACS applied materials & interfaces | Year: 2016

We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently thermally annealed, followed by exposure to an oxygen plasma, to form an insulating (leakage current density of 10(-7) A/cm(2)) SiO2 layer. Optimized ZnO TFTs (40 W plasma treatment of the gate insulator for 10 s) possessed a carrier mobility of 3.2 cm(2)/(V s), an on/off ratio of 10(7), a threshold voltage of -1.3 V, and a subthreshold swing of 0.2 V/decade. In addition, long-term exposure (150 min) of the pre-annealed PHPS to the oxygen plasma enabled the maximum processing temperature to be reduced from 180 to 150 C. The resulting ZnO TFT exhibited a carrier mobility of 1.3 cm(2)/(V s) and on/off ratio of 10(7).

PubMed | KAIST and DNF Co.
Type: | Journal: Scientific reports | Year: 2017

Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray diffraction. The film composition studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy corresponded to a B:N stoichiometric ratio close to 1:1, and the band-gap value (5.65eV) obtained by electron energy loss spectroscopy was consistent with the dielectric properties. The h-BN-containing capacitors were characterized by highly uniform properties, a reasonable dielectric constant (3), and low leakage current density, while graphene on h-BN substrates exhibited enhanced electrical performance such as the high carrier mobility and neutral Dirac voltage, which resulted from the low density of charged impurities on the h-BN surface.

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