Daejeon, South Korea
Daejeon, South Korea

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Jeong Y.,Durham University | Pearson C.,Durham University | Kim H.-G.,DNF Co. | Park M.-Y.,DNF Co. | And 3 more authors.
ACS Applied Materials and Interfaces | Year: 2016

We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently thermally annealed, followed by exposure to an oxygen plasma, to form an insulating (leakage current density of ∼10-7 A/cm2) SiO2 layer. Optimized ZnO TFTs (40 W plasma treatment of the gate insulator for 10 s) possessed a carrier mobility of 3.2 cm2/(V s), an on/off ratio of ∼107, a threshold voltage of -1.3 V, and a subthreshold swing of 0.2 V/decade. In addition, long-term exposure (150 min) of the pre-annealed PHPS to the oxygen plasma enabled the maximum processing temperature to be reduced from 180 to 150°C. The resulting ZnO TFT exhibited a carrier mobility of 1.3 cm2/(V s) and on/off ratio of ∼107. © 2015 American Chemical Society.


Jeong Y.,Durham University | Pearson C.,Durham University | Kim H.-G.,DNF Co. | Park M.-Y.,DNF Co. | And 3 more authors.
RSC Advances | Year: 2015

We report on the lowerature formation (180 °C) of a SiO2 dielectric layer from solution-processed perhydropolysilazane. A bottom-gate zinc oxide thin-film transistor has subsequently been fabricated that possesses a carrier mobility of 3 cm2 V s-1, an on/off ratio of 107 and minimal hysteresis in its transfer and output characteristics. © 2015 The Royal Society of Chemistry.


PubMed | Electronics and Telecommunications Research Institute, Durham University, DNF Co. and Kyung Hee University
Type: Journal Article | Journal: ACS applied materials & interfaces | Year: 2016

We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently thermally annealed, followed by exposure to an oxygen plasma, to form an insulating (leakage current density of 10(-7) A/cm(2)) SiO2 layer. Optimized ZnO TFTs (40 W plasma treatment of the gate insulator for 10 s) possessed a carrier mobility of 3.2 cm(2)/(V s), an on/off ratio of 10(7), a threshold voltage of -1.3 V, and a subthreshold swing of 0.2 V/decade. In addition, long-term exposure (150 min) of the pre-annealed PHPS to the oxygen plasma enabled the maximum processing temperature to be reduced from 180 to 150 C. The resulting ZnO TFT exhibited a carrier mobility of 1.3 cm(2)/(V s) and on/off ratio of 10(7).


PubMed | KAIST and DNF Co.
Type: | Journal: Scientific reports | Year: 2017

Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray diffraction. The film composition studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy corresponded to a B:N stoichiometric ratio close to 1:1, and the band-gap value (5.65eV) obtained by electron energy loss spectroscopy was consistent with the dielectric properties. The h-BN-containing capacitors were characterized by highly uniform properties, a reasonable dielectric constant (3), and low leakage current density, while graphene on h-BN substrates exhibited enhanced electrical performance such as the high carrier mobility and neutral Dirac voltage, which resulted from the low density of charged impurities on the h-BN surface.

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