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Raipur, India

The Disha Institute of Management and Technology , is a university offering undergraduate and graduate degrees, located in Raipur, the capital of Chhatisgarh.It is part of the Disha Education Society affiliated with the Chhattisgarh Swami Vivekanand Technical University. Wikipedia.

Nashine H.K.,Disha Institute of Management and Technology | Samet B.,University of Tunis | Vetro C.,University of Palermo
Mathematical and Computer Modelling | Year: 2011

The purpose of this paper is to present some fixed point theorems for T-weakly isotone increasing mappings which satisfy a generalized nonlinear contractive condition in complete ordered metric spaces. As application, we establish an existence theorem for a solution of some integral equations. © 2011 Elsevier Ltd.

Nashine H.K.,Disha Institute of Management and Technology | Shatanawi W.,Hashemite University
Computers and Mathematics with Applications | Year: 2011

The purpose of this paper is to establish a coupled coincidence point for a pair of commuting mappings in partially ordered complete metric spaces. We also present a result on the existence and uniqueness of coupled common fixed points. An example is given to support the usability of our results. © 2011 Elsevier Ltd. All rights reserved.

Sodha M.S.,Disha Institute of Management and Technology | Misra S.,University of Lucknow | Mishra S.K.,University of Lucknow
Physics of Plasmas | Year: 2010

This paper presents an analysis of the kinetics of an illuminated complex plasma having spherical dust particles with a size distribution. It has been pointed out that in the steady state, the electric potential on the surface of all the particles is the same; as a corollary, all particles carry a charge of the same sign. It is seen that in the steady state, the plasma parameters are determined by the number per unit volume and root mean square radius of the dust particles. This fact makes the analysis similar to that for a complex plasma with dust of uniform size. It is seen that it is essential to consider both the number and energy balance of the constituents of the complex plasma. A parametric analysis, a discussion of the numerical results thus obtained, and conclusions have also been given. © 2010 American Institute of Physics.

Chandra V.K.,Chhatrapati Shivaji Institute of Technology | Chandra B.P.,Disha Institute of Management and Technology
Optical Materials | Year: 2011

Whereas the elastico mechanoluminescence (EML) of certain crystals increases linearly with the stress, nonlinearity occurs in the EML intensity versus stress plot of several crystals. The EML of crystals can be understood on the basis of piezoelectrically-induced detrapping model, whereby the localized piezoelectric field causes detrapping of electrons or holes and subsequently the capture of electrons in the excited states of activator ions, recombination of electrons in hole captured centres, recombination of holes in electron-captured centres or simply the electron-hole recombination gives rise to the light emission. Considering the piezoelectrically-induced detrapping model of EML expression is derived for the stress dependence of the EML intensity. It is shown that the crystals having uniform distribution of traps show linear relationship between the EML intensity and stress and the crystals having exponential distribution of traps show nonlinear relationship between the EML intensity and stress. The crystals having linear dependence of EML intensity on stress are suitable for the fabrication of EML-based stress sensors. The values of coefficient of deformation detrapping, relaxation time of the crosshead of the machine used to deform the samples and lifetime of the charge carriers in the shallow traps lying in the normal piezoelectric region of the crystals can be determined from the EML measurements. The values of the coefficient of deformation detrapping are 0.310, 0.018 and 0.021 MPa-1 for SrMgAl6O11:Eu, Sr2MgSi2O 7:Eu and SrCaMgSi2O7:Eu crystals, respectively. The coefficient of deformation detrapping is low for SrAl2O 4:Eu, SrAl2O4:Eu, Dy, SrBaMgSi 2O7:Eu and ZnS:Mn crystals and such crystals are suitable for EML-based stress sensors. A good agreement is found between the theoretical and experimental results. © 2011 Elsevier B.V. All rights reserved.

Dutta J.,Disha Institute of Management and Technology | Tripathi S.,Motilal Nehru National Institute of Technology | Dutta P.K.,Motilal Nehru National Institute of Technology
Food Science and Technology International | Year: 2012

In recent years, active biomolecules such as chitosan and its derivatives are undergoing a significant and very fast development in food application area. Due to recent outbreaks of contaminations associated with food products, there have been growing concerns regarding the negative environmental impact of packaging materials of antimicrobial biofilms, which have been studied. Chitosan has a great potential for a wide range of applications due to its biodegradability, biocompatibility, antimicrobial activity, nontoxicity and versatile chemical and physical properties. It can be formed into fibers, films, gels, sponges, beads or nanoparticles. Chitosan films have been used as a packaging material for the quality preservation of a variety of foods. Chitosan has high antimicrobial activities against a wide variety of pathogenic and spoilage microorganisms, including fungi, and Gram-positive and Gram-negative bacteria. A tremendous effort has been made over the past decade to develop and test films with antimicrobial properties to improve food safety and shelf-life. This review highlights the preparation, mechanism, antimicrobial activity, optimization of biocide properties of chitosan films and applications including biocatalysts for the improvement of quality and shelf-life of foods. © Author(s) 2011.

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