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Ewing, NJ, United States

Agency: Department of Defense | Branch: Navy | Program: SBIR | Phase: Phase I | Award Amount: 80.00K | Year: 2014

We will manufacture high current handling balanced photodiodes in a rugged 8-pin Kovar package having the following characteristics: (a) Small Package with height of 5 mm, and volume of 2.5 cubic cm; (b) Use 7 micron core, loose tube, SM fiber for tight bend radius; (c) Responsivity>0.7 A/W at 1310 and 1550 nm; (d) 20 GHz bandwidth with total 1dB saturation current of 100 mA (50 mA per photodiode); (e) 40 GHz bandwidth with total 1dB saturation current of 50 mA (25 mA per photodiode); (f) CMRR>20 dB for the entire frequency band; (g) Operating Temperature Range -40 to 100 degree Celcius; (h) OIP3 of minimum +40 dBm and, OIP2 +50 dBm per photodiode for 2 to 40 GHz frequency band. One packaged device of the high current handling balanced photodiode having a bandwidth of minimum 20 GHz will be delivered to NAVAIR.

Agency: Department of Defense | Branch: Defense Advanced Research Projects Agency | Program: STTR | Phase: Phase II | Award Amount: 750.00K | Year: 2007

In Phase II, we propose to develop high saturation current photodiodes that will meet the following design criteria: (a) Responsivity > 0.65 A/W, (b) 1 dB compression current > 100 mA, (c) Bandwidth DC to 18 GHz,(d) Wavelength response of 1300 to 1550 nm, and (e) OIP3 of +50 dBm. Three different photodiode designs will be tested for maximum saturation current: Partially Depleted Absorber (PDA), Dual-depletion Region (DDR), and Charge Compensated Uni Traveling Carrier (CC UTC). A comparative study of these three designs will determine which structure is more suitable for the above design goals. As saturation current levels increase above 100 mA, the problem of excessive Joule heating (multiple of voltage bias and photodiode current) creates the problem of "thermal runaway" leading to eventual device failure. We will investigate "wafer bonding" of InGaAs photodiodes to silicon wafers for better heat removal caused by Joule heating. This will ultimately lead to a more reliable photodiode. Additionally, both single and doublet Graded Index (GRIN) lenses will be used for optical beam shaping to convert a Gaussian beam to a flattop beam. This will help us achieve the above listed five goals.

Agency: National Aeronautics and Space Administration | Branch: | Program: SBIR | Phase: Phase II | Award Amount: 600.00K | Year: 2011

Broadband focal plane arrays, operating in UV-to-SWIR wavelength range, are required for atmospheric monitoring of greenhouse gases. Currently, separate image sensors are used for different spectral sub-bands: GaN for UV, Si for visible, and InGaAs for SWIR, requiring expensive component-level integration for hyper-spectral imaging. Also, the size of the InGaAs focal plane arrays is currently limited by the InP substrate area.We propose to develop a 640 x 512 UV-to-SWIR focal plane array sensor using GaAs substrate having following photodiode performance: (1) Cut-on Wavelength = 0.25 micron; (2) Cut-off Wavelength = 2.5 micron; (3) RoA>35 Ohm-cm^2 at 300K; and (4) Quantum Eficiency>30% in UV (0.25 to 0.4 micron),>80% in Visible (0.4 to 0.9 micron), and>70% in IR (0.9 to 2.5 micron) subbands.Based on P.I.'s experience on SCIAMACHY, this project will enable one image sensor for 8 spectroscopic channels currently orbiting on European Space Agency's ENVISAT.

Agency: National Aeronautics and Space Administration | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 100.00K | Year: 2009

Gravity wave detection using space-based long-baseline laser interferometric sensors imposes stringent noise requirements on the system components, including the large area photoreceiver front ends. The proposed innovation utilizes dual depletion region technology to produce a large area (1mm diameter) 2x2 quad p-i-n InGaAs photodiode array having ~2.1pF capacitance per quadrant. The small capacitance of the quad photodiode array is leveraged in combination with a low-noise JFET-input operational amplifier to manufacture ultra-low noise quad photoreceiver array. Each element (quadrant) of the photoreceiver array will have an input equivalent current noise

Agency: Department of Defense | Branch: Army | Program: SBIR | Phase: Phase I | Award Amount: 70.00K | Year: 2009

We propose to demonstrate a photonic radio-frequency (RF) arbitrary waveform generator (AWG) having (1) 3 dB bandwidth = 10 GHz, (2) time aperture > 2 ns (time-bandwidth product > 20), and (3) maximum RF output amplitude > 3 V. This performance will be facilitated by our proposed highly linear, high-power 10 GHz bandwidth photodiodes which will deliver > 3 V peak RF amplitude, thereby enabling a 6-fold improvement over the state-of-the-art in photonic AWGs. Additionally, the photodiode will provide high amplitude linearity (> 50 dBm OIP3) and high phase linearity (< 2 rad/W power-to-phase conversion factor) in order to maximize the dynamic range as well as to reduce the timing jitter of photonic AWGs. Our photodiodes’ inherently low polarization dependent loss (< 0.1 dB) combined with the proposed modifications in the photonic AWG architecture will lead to a stable operation for > 1 hour without any polarization adjustments. During the Phase I Option period, the 3 dB bandwidth of the proposed photodiode and the photonic AWG will be extended to 20 GHz, while maintaining the other specifications.

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