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Patent
Disco Corporation | Date: 2016-05-26

A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot, including a separation start point forming step of setting the focal point of a laser beam inside the ingot at a predetermined depth from the ingots upper surface, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam while relatively moving the focal point and the ingot to thereby form: (i) a modified layer parallel to the ingots upper surface, and (ii) cracks extending from the modified layer, thus forming a separation start point. The laser beam is applied to form the modified layer in a condition where the relation of 0.3(dx)/d0.5 holds, where d is the diameter of a focused spot of the laser beam and x is the spacing between adjacent focused spots of the laser beam.


Patent
Disco Corporation | Date: 2016-05-26

A wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot including a separation start point forming step of setting the focal point of a laser beam inside the ingot at a predetermined depth from the ingots upper surface, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the upper surface of the ingot while relatively moving the focal point and the ingot to thereby form: (i) a modified layer parallel to the ingots upper surface, and (ii) cracks extending from the modified layer, thus forming a separation start point. Preferably, the laser beam includes a plurality of laser beams to be simultaneously applied to form a plurality of linear modified layers. The focal points of the laser beams are arranged with predetermined spacing in the direction of formation of an off angle.


Patent
Disco Corporation | Date: 2016-06-21

A SAW device wafer has a crystal substrate having a front side partitioned into a plurality of regions by a plurality of crossing division lines, a pair of comblike electrodes formed in each region defined on the front side of the crystal substrate by the division lines, and a cover layer formed of resin for covering the whole of the front side of the crystal substrate. The SAW device is manufactured by forming a laser processed groove on the cover layer along each division line, the laser processed groove having a depth not reaching the crystal substrate, forming a modified layer inside the crystal substrate along each division line, and applying an external force to the SAW device wafer, thereby dividing the SAW device wafer along each division line to obtain the plural SAW devices.


Patent
Disco Corporation | Date: 2016-06-23

Disclosed herein is a small unmanned air vehicle repulsing apparatus including a capturing body adapted to capture a drone, a target to be captured; and a capturing body launching apparatus adapted to launch the capturing body at the drone, in which the capturing body launching apparatus can quickly capture the drone by launching the capturing body even if the suspicious drone flies into an area to be protected so as to protect the interest and safety of law-abiding people.


Patent
Disco Corporation | Date: 2016-04-01

A hexagonal single crystal wafer is produced from a hexagonal single crystal ingot. A wafer producing method includes a separation start point forming step of applying a laser beam to the ingot to form a modified layer parallel to the upper surface of the ingot and cracks extending from the modified layer, thus forming a separation start point. The focal point of the laser beam is relatively moved in a first direction perpendicular to a second direction where a c-axis in the ingot is inclined by an off angle with respect to a normal to the upper surface. The off angle is formed between the upper surface and a c-plane perpendicular to the c-axis, thereby linearly forming the modified layer extending in the first direction. The laser beam is applied to the ingot with the direction of the polarization plane of the laser beam set to the first direction.


Patent
Disco Corporation | Date: 2016-04-01

A wafer is produced from an ingot having an end surface. The method includes an end surface measuring step of measuring undulation present on the end surface, and a separation plane forming step of setting the focal point of a laser beam inside the ingot at a predetermined depth from the end surface, which depth corresponds to the thickness of the wafer to be produced, and next applying the laser beam to the end surface to thereby form a separation plane containing a modified layer and cracks extending from the modified layer. The height of an objective lens for forming the focal point of the laser beam is controlled so that the focal point is set in the same plane to form the separation plane, according to the numerical aperture NA of the lens, the refractive index N of the ingot, and the undulation present on the end surface.


Patent
Disco Corporation | Date: 2016-07-20

A wafer processing method includes a wafer holding step of holding a wafer having devices formed on the front side, a protective film forming step of forming a water-soluble protective film on the front side of the wafer, a laser beam applying step of applying a laser beam to the wafer along streets, a cleaning step of cleaning the wafer to then remove the protective film, and a foreign matter removing step of removing foreign matter from the wafer when a predetermined period of time has elapsed after cleaning. This period of time is set as a period of time until a phosphorus containing reaction product produced at a laser processed portion is evaporated to react with water in the air, thereby producing the foreign matter containing phosphorus on bumps formed on each device.


Patent
Disco Corporation | Date: 2016-07-13

Disclosed herein is a wafer thinning method for thinning a wafer formed from an SiC substrate having a first surface and a second surface opposite to the first surface. The wafer thinning method includes an annular groove forming step of forming an annular groove on the second surface of the SiC substrate in an annular area corresponding to the boundary between a device area and a peripheral marginal area in the condition where a thickness corresponding to the finished thickness of the wafer after thinning is left, and a separation start point forming step of applying the laser beam to the second surface as relatively moving a focal point and the SiC substrate to thereby form a modified layer and cracks inside the SiC substrate at the predetermined depth.


Patent
Disco Corporation | Date: 2016-07-18

Disclosed herein is a wafer thinning method for thinning a wafer formed from an SiC substrate having a first surface and a second surface opposite to the first surface. The wafer thinning method includes a separation start point forming step of applying the laser beam to the second surface as relatively moving the focal point and the SiC substrate to thereby form a modified layer parallel to the first surface and cracks inside the SiC substrate at the predetermined depth, thus forming a separation start point, and a wafer thinning step of applying an external force to the wafer, thereby separating the wafer into a first wafer having the first surface of the SiC substrate and a second wafer having the second surface of the SiC substrate at the separation start point.


Patent
Disco Corporation | Date: 2016-03-22

A method of inspecting a cutting blade having a cutting edge formed of abrasive grains of selected abrasive grain diameters which are bound by a bonding material, includes a cutting step of moving the chuck table and the cutting blade, which is being rotated at a high speed, relatively to each other along a direction perpendicular to an axis of rotation of a spindle, thereby forming a cut groove in the workpiece, and an inspecting step of capturing an image of the cut groove formed in the workpiece by image capturing means, and inspecting the state of the cut groove. The inspecting step examines whether or not the selected abrasive grain diameters are proper on the basis of any of the elements representing the size of an average chip, the number of chips, and the area of chips on both sides of the cut groove per unit length.

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