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Patent
Disco Corporation | Date: 2016-11-03

Disclosed herein is an SiC substrate separating method for separating an SiC substrate into at least two parts in a planar manner. The SiC substrate separating method includes an adhesive tape attaching step of attaching a transparent adhesive tape to a first surface of the SiC substrate, a support member attaching step of attaching a support member to a second, opposite surface of the SiC substrate, and a separation start point forming step of setting the focal point of a laser beam at a predetermined depth from the adhesive tape and next applying the laser beam to the adhesive tape while relatively moving the focal point and the SiC substrate to thereby form a modified layer parallel to the first surface of the SiC substrate and cracks propagating from the modified layer, thus forming a separation start point.


Patent
Disco Corporation | Date: 2016-11-10

A method for forming a water-soluble resin film on a wafer having a plurality of devices thereon. The wafer is supported through an adhesive tape to an annular frame. The method includes removing the resin scattered onto the surface of the frame in forming the film on the wafer held on a spinner table, and this step further includes: rotating the spinner table; positioning a water nozzle above the frame held on the spinner table, supplying water from the nozzle to the frame, positioning an air nozzle adjacent to the water nozzle on the downstream side thereof in the rotational direction of the spinner table, and supplying air from the air nozzle against the flow of the water on the frame, whereby the water is forced to temporarily stay on the surface of the frame by the air supplied and is then expelled outward of the frame.


Patent
Disco Corporation | Date: 2016-11-10

A method for dividing a wafer having a wiring layer including Cu on the front side, the front side of the wafer being partitioned by a plurality of crossing division lines to define a plurality of separate regions where a plurality of devices are formed. The method includes a laser processed groove forming step of applying a laser beam to the wiring layer along each division line to thereby remove the wiring layer along each division line and form a laser processed groove along each division line, a cutting step of using a cutting blade having a thickness smaller than the width of each laser processed groove to fully cut the wafer along each laser processed groove after performing the laser processed groove forming step, and a dry etching step of dry-etching at least each laser processed groove after performing the laser processed groove forming step.


Patent
Disco Corporation | Date: 2016-12-09

Disclosed herein is a protective film detecting method of detecting the formed condition of a protective film formed on the front side of a workpiece. The protective film detecting method includes a fluorescence intensity measuring step of forming a plurality of reference protective films having different thicknesses on the front sides of a plurality of reference workpieces, next applying excitation light absorbable by an absorbing agent contained in each reference protective film to each reference protective film, and next measuring the intensity of fluorescence emitted from the absorbing agent due to the absorption of the excitation light, and a threshold deciding step of deciding a threshold of the fluorescence intensity corresponding to a desired one of the different thicknesses of the reference protective films according to the fluorescence intensity measured above.


Patent
Disco Corporation | Date: 2016-12-02

A method of processing a wafer includes placing a supporting substrate in confronting relation to a face side of the wafer and integrally bonding the supporting substrate to the face side of the wafer with a bonding material, grinding a reverse side of the wafer to thin the wafer, cutting the wafer along division lines from the reverse side of the wafer into chips that carry individual devices thereon, placing a protective member on the reverse side of the wafer, applying a laser beam having a wavelength which is able to transmit the supporting substrate in the condition where a focused spot of the laser beam is set in the bonding material, thereby breaking the bonding material, and peeling the supporting substrate off from the devices to separate the chips that carry the individual devices thereon.


Patent
Disco Corporation | Date: 2016-11-30

A wafer is divided into a plurality of individual devices along a plurality of division lines, the wafer being composed of a substrate and a functional layer formed on the upper surface of the substrate through a buffer layer. The functional layer is partitioned by the division lines to define a plurality of separate regions where the devices are formed on the front side of the wafer. At least the functional layer is cut along the division lines. A protective member is provided on the front side of the wafer. The buffer layer is broken by applying a laser beam having a transmission wavelength to the substrate with the focal point of the laser beam set in the buffer layer, thereby breaking the buffer layer. The substrate is peeled from the functional layer, thereby forming the individual devices from the functional layer.


Patent
Disco Corporation | Date: 2016-12-06

Disclosed herein is a wafer processing method including a stacked member removing step of applying a laser beam having an absorption wavelength to a stacked member through a protective film along each division line formed on the front side of a wafer, thereby performing ablation to remove the stacked member present on each division line, a dividing step of applying an external force to the wafer to divide the wafer into individual device chips along each division line where a modified layer is previously formed, and a plasma etching step of supplying an etching gas in a plasma state to the wafer from the front side thereof after performing the stacked member removing step or after performing the dividing step, thereby removing damage due to the ablation in the stacked member removing step.


Patent
Disco Corporation | Date: 2016-12-06

Disclosed herein is a human transporting drone including a drone core, a human receptacle for accommodating a human, the human receptacle being detachably housed in the drone core, ropes connected to the human receptacle, and rope winding mechanisms mounted on the drone core, for winding the ropes to house the human receptacle into the drone core and unwinding the ropes to release the human receptacle from the drone core.


Patent
Disco Corporation | Date: 2017-01-03

A SiC wafer is produced from an SiC ingot having an end surface by setting the focal point of a laser beam at a predetermined depth from the end surface. The depth corresponds to the thickness of the SiC wafer to be produced. The laser beam is applied to the end surface of the SiC ingot while relatively moving the focal point and the SiC ingot to thereby form a modified layer parallel to the end surface and cracks extending from the modified layer, thus forming a separation start point. The separation start point is formed by setting the numerical aperture of a focusing lens to form the focal point to 0.45 to 0.9 and substantially setting the M^(2 )factor of the laser beam between 5 and 50 to thereby set the diameter of the focal point to 15 to 150 m.


Patent
Disco Corporation | Date: 2017-01-03

A wafer production method for producing a wafer from a lithium tantalate ingot includes a step of irradiating, from an end face of a lithium tantalate ingot which is a 42-degree rotation Y cut ingot having an orientation flat formed in parallel to a Y axis, a laser beam of a wavelength having transparency to lithium tantalate with a focal point of the laser beam positioned in the inside of the ingot to form a modified layer in the inside of the ingot while the ingot is fed for processing, and a step of applying external force to the ingot to peel off a plate-shaped material from the ingot to produce a wafer. At the step of forming a modified layer, the ingot is relatively fed for processing in a direction parallel or perpendicular to the orientation flat.

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