Disco Corporation | Date: 2015-01-07
An optical device including a substrate and a light emitting layer formed on the front surface of the substrate. Both the front surface and the back surface of the substrate are parallel to each other and have substantially the same rectangular shape. The substrate has four side surfaces connecting the front surface and the back surface of the substrate. Of the four side surfaces, each of the two side surfaces adjacent to each other has a convex sectional shape between the front surface and the back surface of the substrate, and each of the other two side surfaces adjacent to each other has a concave sectional shape between the front surface and the back surface of the substrate.
Disco Corporation | Date: 2015-08-07
A workpiece has a plurality of low-dielectric-constant insulation films and a metallic pattern stacked on a surface of a semiconductor substrate. Devices are formed in a plurality of regions partitioned by streets formed in a grid pattern. Surfaces of the devices formed on the workpiece are covered with a surface protective member, leaving the streets exposed. A dispersion of abrasive grains in an etching liquid capable of dissolving the metallic pattern is blasted against the workpiece together with compressed gas so as to remove the low-dielectric-constant insulation films and the metallic pattern on the streets, thereby exposing the semiconductor substrate. The workpiece is divided with the semiconductor substrate exposed by the wet blasting step subjected to dry etching so as to divide the workpiece along the streets.
Disco Corporation | Date: 2015-08-04
A wafer processing method includes forming a resist film on the front side of a wafer in an area except division lines, plasma etching the wafer to form a groove on the front side of the wafer along each division line, the groove having a depth greater than a finished thickness, removing the resist film from the front side of the wafer by cleaning, and grinding the back side of the wafer to reduce the thickness of the wafer to the finished thickness, so that the groove is exposed to the back side of the wafer to thereby divide the wafer into individual device chips. In the resist film removing step, a chemical fluid is sprayed to the resist film formed on the front side of the wafer, thereby removing the resist film.
Disco Corporation | Date: 2015-09-30
A wafer inspection method includes a step of picking up an image of a processed face of a wafer, a step of extracting a pixel having a pixel value higher than those of peripheral pixels as a characteristic point from among pixels in each predetermined region of picked up image data to create a first image, and a step of extracting a pixel having a pixel value lower than those of peripheral pixels as a characteristic point from among the pixels in each predetermined region of the picked up image data to create a second image. The first and second images are used to inspect the processed face of the wafer.
Disco Corporation | Date: 2015-08-11
Disclosed herein is a laser beam spot shape detection method for detecting a spot shape of a laser beam oscillated by laser beam oscillator and collected by a condenser in a laser machining apparatus, the laser beam spot shape detection method including: a concave mirror holding step of holding a concave mirror having a spherical face forming a reflecting face with a chuck table; a focal point positioning step of positioning the focal point of the condenser in a proximity including the center of the spherical face forming the reflecting face of the concave mirror held by the chuck table; a laser beam irradiation step of irradiating a laser beam onto the held concave mirror, and an imaging step of capturing images of reflected light with a camera.