Pudong District, China
Pudong District, China

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Voigt M.M.,Imperial College London | Cuite A.,Imperial College London | Chung D.-Y.,Imperial College London | Chung D.-Y.,Merck And Co. | And 25 more authors.
Advanced Functional Materials | Year: 2010

The mass production technique of gravure contact printing is used to fabricate state-of-the art polymer field-effect transistors (FETs). Using plastic substrates with prepatterned indium tin oxide source and drain contacts as required for display applications, four different layers are sequentially gravureprinted; the semiconductor poly(3-hexylthiophene-2,S-diyl) (P3HT), two insulator layers, and an Ag gate. A Crosslin kable insulator and an Ag ink are developed which are both printable and highly robust Printing in ambient and using this bottom-contact/top-gate geometry, an on/off ratio of >10 4 and a mobility of 0.04 cm2 V-1 s-1 are achieved. This rivals the best top-gate polymer FETs fabricated with these materials. Printing using low concentration, low viscosity ink formulations, and different P3HT molecular weights is demonstrated. The printing speed of 40 m min-1 on a flexible polymer substrate demonstrates that very high-volume, reel-to-reel production of organic electronic devices is possible. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA.

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