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Gupta C.,Deptartment of niversity of California Santa BarbaraSanta BarbaraCalifornia93106 | Enatsu Y.,Deptartment of niversity of California Santa BarbaraSanta BarbaraCalifornia93106 | Gupta G.,Deptartment of niversity of California Santa BarbaraSanta BarbaraCalifornia93106 | Keller S.,Deptartment of niversity of California Santa BarbaraSanta BarbaraCalifornia93106 | Mishra U.K.,Deptartment of niversity of California Santa BarbaraSanta BarbaraCalifornia93106
Physica Status Solidi (A) Applications and Materials Science | Year: 2016

In order to achieve high breakdown voltage in GaN vertical power devices, low threading dislocation density and low background carrier concentration is required. This work demonstrates a decrease in the background carrier concentration and threading dislocation density (TDD) with an increase in the thickness of un-intentionally doped (UID) GaN grown on sapphire. p-n diodes grown and fabricated on this epi, using 4.8μm UID GaN, showed a breakdown voltage of 730V, breakdown field of 1.75MVcm-1 and an on-resistance of 5.1mΩcm2. The figure of merit (FOM), VBR 2/RON, thus obtained is approximately 105MWcm-2 . This is the highest reported FOM value for p-n diodes on GaN on sapphire or Si. Lowering the carrier concentration and dislocation density is thus shown to be critical for achieving high breakdown voltages on GaN on sapphire. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source

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