DCG Systems Inc.

Fremont, CA, United States

DCG Systems Inc.

Fremont, CA, United States
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A method for testing an integrated circuit (IC) using a nanoprobe, by using a scanning electron microscope (SEM) to register the nanoprobe to an identified feature on the IC; navigating the nanoprobe to a region of interest; scanning the nanoprobe over the surface of the IC while reading data from the nanoprobe; when the data from the nanoprobe indicates that the nanoprobe traverse a feature of interest, decelerating the scanning speed of the nanoprobe and performing testing of the IC. The scanning can be done at a prescribed nanoprobe tip force, and during the step of decelerating the scanning speed, the method further includes increasing the nanoprobe tip force.


Patent
DCG Systems Inc. | Date: 2016-02-03

Using a local-potential-driving probe drives a conductor to a known potential while adjacent lines are grounded through the sample body reduces electrostatic scanning microscope signal from adjacent lines, allows imaging of metal lines deeper in the sample. Providing different potentials locally on different conductive lines using multiple local-potential-driving probes allows different conductors to be highlighted in the same image, for example, by changing the phase of the signal being applied to the different local-potential-driving probes.


Patent
DCG Systems Inc. | Date: 2016-03-19

A charged particle beam, such as an electron beam or an ion beam, scans a device while a signal is applied to the device. As the particle beam scans, it locally heats the device, altering the local electrical characteristics of the device. The change in electrical characteristic is detected to and correlated to the position of the electron beam to localize a defect.


Patent
DCG Systems Inc. | Date: 2016-06-14

Milling using a scanning probe microscope with a diamond tip removes a layer of material and produces a surface that is sufficiently smooth that it can be probed using a nanoprober to provide site-specific sample preparation and delayering. Diamond milling provides in situ, localized, precision delayering inside of a nanoprobing tool, thereby decreasing the turnaround time for integrated circuit analysis. Furthermore, unlike focused ion beam delayering, the diamond tip should not alter the electrical characteristics of the integrated circuit.


Patent
DCG Systems Inc. | Date: 2015-04-08

An apparatus and method for optical probing of a DUT is disclosed. The system enables identifying, localizing and classifying faulty devices within the DUT. A selected area of the DUT is imaged while the DUT is receiving test signals, which may be static or dynamic, i.e., causing certain of the active devices to modulate. Light from the DUT is collected and is passed through a transparent diffracting grating prior to imaging it by a sensor and converting it into an electrical signal. The resulting image includes the zero order and first order diffraction of the grating. The grating is configured such that the zero order is in registration with emission sites imaged when the grating is outside the optical path.


Patent
DCG Systems Inc. | Date: 2016-01-15

Probing an integrated circuit (IC), by: electrically applying stimulation signal to said IC; scanning a selected area of said IC with a monochromatic beam; collecting beam reflection from the selected area of said IC, wherein the beam reflection correspond to modulation of the monochromatic beam by active devices of said IC; converting said beam reflection to an electrical probing signal; selecting a frequency or a band of frequencies of said probing signal; utilizing the probing signal to generate a spatial modulation map for various locations over the selected area of said IC; and displaying the spatial map on a monitor, wherein grey scale values correspond to modulation signal values.


Patent
DCG Systems Inc. | Date: 2016-01-21

An apparatus and method for laser probing of a DUT is disclosed. The system enables laser voltage imaging state mapping of devices within the DUT. A selected area of the DUT is illuminating a while the DUT is receiving test signals causing certain of the active devices to modulate. Light reflected from the DUT is collected and is converted into an electrical signal. Phase information is extracting from the electrical signal and a two-dimensional image is generated from the phase information, wherein the two-dimensional image spatially correlates to the selected area.


Patent
DCG Systems Inc. | Date: 2015-06-25

A method for probing a semiconductor device under test (DUT) using a combination of scanning electron microscope (SEM) and nanoprobes, by: obtaining an SEM image of a region of interest (ROI) in the DUT; obtaining a CAD design image of the ROI; registering the CAD design image with the SEM image to identify contact targets; obtaining a Netlist corresponding to the contact targets and using the Netlist to determine which of the contact targets should be selected as test target; and, navigating nanoprobes to land a nanoprobe on each of the test targets and form electrical contact between the nanoprobe and the respective test target.


System for performing in-line nanoprobing on semiconductor wafer. A wafer support or vertical wafer positioner is attached to a wafer stage. An SEM column, an optical microscope and a plurality of nanoprobe positioners are all attached to the ceiling. The nanoprobe positioners have one nanoprobe configured for physically contacting selected points on the wafer. A force (or touch) sensor measures contact force applied by the probe to the wafer (or the moment) when the probe physically contacts the wafer. A plurality of drift sensors are provided for calculating probe vs. wafer alignment drift in real-time during measurements.


A method and a system for determining material parameters of a sample layer (24) by using lock-in thermography (LIT) comprise applying a test signal to a heat source to heat up the sample layer and imaging the sample layer using an infrared sensor to obtain IR images of the sample layer while the test signal is applied to the heat source; detecting a thermal response signal obtained from the imaging being in correlation to thermal heat propagation within the sample layer; determining the phase shifts of the frequency specific response signal; and using the phase shift of the frequency specific response signal to calculate material parameters of the sample layer, the material parameters being any of material density, specific heat capacity, heat conductivity and thermal diffusion length.

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