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Kimball M.,Maxim Integrated Products Inc. | Nemirow C.,DCG Systems
Conference Proceedings from the International Symposium for Testing and Failure Analysis | Year: 2012

Failure analysis of RFICs can be a challenging problem, particularly as frequencies ascend into the medium to high GHz region. As frequency goes up, active probes become less and less accurate due to capacitive loading of circuit nodes, and capacitive coupling of stray signals into the probe from nearby circuit traces. We have found that Laser Voltage Imaging (LVi) offers an alternative measurement technique that can avoid these problems. But our work also showed that there are unusual failure signatures which appear as signal frequencies go up. A combination of LVI and RF-SDL was found to yield the best result. Copyright © 2012 ASM International® All rights reserved. Source


Wadhwa K.,DCG Systems Inc. | Schmidt C.,DCG Systems | Wagner L.,LWSN Consulting Inc.
Electronic Device Failure Analysis | Year: 2013

The shrinking geometries in the existing 3-D integrated circuit (IC) designs generate an urgent need for a variety of tools to isolate failures on advanced semiconductor devices. Lock-in thermography (LIT) has addressed these issues by exponentially increasing the sensitivity to detect thermal emissions. It has the added advantage of eliminating the application of a thermally sensitive material to the surface of the device. The issue with spatial resolution has also been addressed with the use of the solid immersion lens (SIL) with backside analysis. Phase shifts related to the heat propagation inside the device under test (DUT) can also be used to indicate the depth of thermal emission below the surface, providing high-resolution localization in the third dimension. LIT addresses the sensitivity of hot-spot techniques and overcomes system noise, along with noise associated with sample emissivity. Source


Forli L.,Lfoundry | Picart B.,Lfoundry | Reverdy A.,Sector Technologies | Schlangen R.,DCG Systems
Conference Proceedings from the International Symposium for Testing and Failure Analysis | Year: 2011

In this paper, we demonstrate that lock-in thermography (LIT) appears as a key and complementary technique for Failure Analysis across different use cases. Even if the failure requires a complex emulation setup, thanks to a specific capability of our thermal system, this kind of failure can be addressed. In our FA case study, we will show that LIT is a most efficient solution to address a bridge defect located inside a complex logic area, and furthermore that LIT highlights the defect itself and not only the consequences of the defect. Copyright © 2011 ASM International®. All rights reserved. Source


Seimiya N.,MARUBUN CPRPORATION | Watanabe T.,Kanagawa University | Ichinomiya T.,DCG Systems
Conference Proceedings from the International Symposium for Testing and Failure Analysis | Year: 2013

We developed the non-destructive failure analysis method that is combination of Lock-in thermography (LIT) and high resolution 3D oblique CT. It made possible to complete the total analysis efficiently, because we can distinguish the type of failure by this non-destructive method. Copyright © 2013 ASM International® All rights reserved. Source


Scholz P.,TU Berlin | Gallrapp C.,TU Berlin | Gallrapp C.,CERN | Kerst U.,TU Berlin | And 2 more authors.
Microelectronics Reliability | Year: 2010

In search of efficient solutions improving image resolution for backside failure analysis, the creation of solid immersion lenses in bulk silicon using focused ion beam has been investigated deeply in parametric detail. This technique is optimized using design of experiments, providing a better understanding of the pure ion beam sputtering process. It produces SILs in less than 20 min of processing time and offers an additional magnification of 3.2×. The optimal setup of this FIB created SIL is demonstrated and provides an improvement in resolution by a factor of 1.8. Limits of this technique are encountered and analyzed for future development. © 2010 Elsevier Ltd. All rights reserved. Source

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