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Dalian, China

Pan W.-Y.,Dalian DC Silicon Co. | Fan G.-Y.,Dalian DC Silicon Co. | Lin W.-T.,Dalian DC Silicon Co.
Yejin Fenxi/Metallurgical Analysis | Year: 2010

Trace boron in industrial silicon was determined by inductively coupled plasma atomic emission spectrometry (ICP-AES) after the sample was decomposed with HNO3-HF mixed acid. The results showed that the volatilization of boron could be effectively inhibited by controlling the heating temperature at 140-180°C. The analytical spectral lines were investigated, and B208.9 nm{161}was selected. Moreover, by properly deducting the background under the experimental conditions, the matrix and other coexiting elements had no interference with the spectra of B208.9 nm{161}. Under the optimal working conditions of instrument, the detection limit of method was 0.03 μg/mL and the recovery was 90%-105% with the relative standard deviation (RSD) of no more than 7.0% (n=11). The proposed method has been applied to the determination of boron in industrial silicon certified reference materials, and the results were consistent with the certified values.

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