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Nagoya-shi, Japan

Matsuda T.,Toyama Prefectural University | Yamada K.,Toyama Prefectural University | Iwata H.,Toyama Prefectural University | Hatakeyama T.,Toyama Prefectural University | And 2 more authors.
IEEE International Conference on Microelectronic Test Structures | Year: 2014

A test structure for analysis of temperature distribution in stacked IC, which has a top tier chip attached on a bottom dummy chip with adhesive layer, is presented. The devices with four kinds of thickness of 50-410 um were fabricated. Dependences of the temperature on distance from the heater resistor were analyzed with on-chip sensor arrays, as well as fast transient phenomena. The thinner top tier structures showed the higher temperature and affected the temperature distributions. The test structure can provide an effective way for analysis of thermal properties in various LSIs. © 2014 IEEE. Source


Matsuda T.,Toyama Prefectural University | Yamada K.,Toyama Prefectural University | Demachi H.,Toyama Prefectural University | Iwata H.,Toyama Prefectural University | And 3 more authors.
IEEE Transactions on Semiconductor Manufacturing | Year: 2015

Temperature distributions in 3-D integrated circuits (ICs) are analyzed with a test structure, which has a top-tier chip attached on a bottom dummy chip with adhesive layer. The devices with four kinds of top-tier chip thickness tSi of 50-410 μm were fabricated by a standard 0.18 μm CMOS process. The test structure consists of 24 sensor blocks, each of which has sensor p-n diodes, an on-chip heater resistor, and selector switches. The temperature distributions of the top-tier test chip under the constant and pulsed heater power were analyzed by both measurements and thermal simulations. Temperature T, which decreases with the distance L, is proportional to the reciprocal of L (1/L). Stacking effects on the temperature distributions become clear for the device with thinner tSi , and tSi = 50 μm device has a different proportional constant for the region of larger L. Thermal simulations with an entire chip model show similar temperature distributions and the effects of bonding pads. Thermal transient phenomena in stacked ICs were analyzed under the pulsed heating and compared with simulation results. T rises abruptly after the heating pulse input and then gradually increases, and the thermal simulation reproduces the similar results. The test structure and the simulation modeling can provide an effective way for analysis of thermal conduction in stacked ICs. © 2015 IEEE. Source


Ohzone T.,Dawn Enterprise | Matsuda T.,Toyama Prefectural University | Hase S.,Toyama Prefectural University | Nohara S.,Toyama Prefectural University | Iwata H.,Toyama Prefectural University
Japanese Journal of Applied Physics | Year: 2010

Current-voltage (IG-VG) and electroluminescence (EL) characteristics are reported for indium-tin oxide (ITO)/Tb-Si-O layer/n +-Si metal-oxide-semiconductor (MOS) devices. The Tb-Si-O layer was fabricated from a Tb organic compound film, which was spin-coated on an n +-Si substrate and annealed with temperatures from 700 to 1000 °C for 30 min in air. The EL intensity increased proportionally to the supply current, and it also increased with annealing temperature at the same current. The EL device emitted green light with four photon energy peaks at 2.52 eV (492 nm), 2.27 eV (547 nm), 2.11 eV (589 nm), and 1.99 eV (623 nm), which originated from the intrashell transitions of 5D4-7F J (J = 6, 5, 4, and 3) of Tb3+ ions excited by hot electrons. The surface layers on the Si substrate have a total thickness of about 30 nm and consist of a Tb2O3 layer, and a mixture layer of Tb2O3 and Tb-Si-O depending on the annealing temperature © 2010 The Japan Society of Applied Physics. Source


Ohzone T.,Dawn Enterprise | Matsuda T.,Toyama Prefectural University | Hase S.,Toyama Prefectural University | Nohara S.,Toyama Prefectural University | Iwata H.,Toyama Prefectural University
Japanese Journal of Applied Physics | Year: 2011

Current-voltage (Ig-Vg) characteristics and green/red electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with indium-tin oxide (ITO)/[(Tb/Ba-Si-O)/(Tb/Eu-Si-O)] layers/n+-Si substrate are reported. The (Tb/Ba-Si-O) and (Tb/Eu-Si-O) layers were fabricated from the mixtures of organic liquid sources of (Tb + Ba) and (Tb + Eu), respectively, which were spin-coated on the n+-Si substrate and annealed at 850 °C for 30min in air. IG currents under EL emission correspond to Fowler-Nordheim (FN) tunnel current. The MOS devices with the (Tb/Ba)-Si-O layer and the (Tb/Eu)-Si-O layer emitted green and red EL, which originated from the intrashell transitions of5D4-7FJ (J = 6, 5, 4, and 3) of Tb3+ ions and 5D0- 7FJ (J = 1, 2, 3, and 4) of Eu3+ ions, respectively. EL intensity increased proportionally to IG to the n-th power, where n was about 1.3, and the EL spectra were independent of the currents. The oxide layers on the Si substrate for the green and the red devices have the total thicknesses of about 40 and 30 nm, which consist of [Tb2O 3 and (Tb/Ba-Si-O)] and [Tb2O3/Eu 2O3 and (Tb/Eu-Si-O)] mixtures, respectively. © 2011 The Japan Society of Applied Physics. Source


Ohzone T.,Dawn Enterprise | Matsuda T.,Toyama Prefectural University | Saito S.,Toyama Prefectural University | Iwata H.,Toyama Prefectural University
Japanese Journal of Applied Physics | Year: 2014

Ultraviolet (UV) and white electroluminescence (EL) from metal-oxide-semiconductor (MOS) devices with indium-tin oxide (ITO)/[(Gd/(Gd + Dy/ La/Ca/Ba)-Si-O] insulator layers/n+-Si substrate are reported. The insulator layers were fabricated from mixtures of organic liquid sources of (Gd) or [Gd+(Dy/La/Ca/Ba)], which were spin-coated on the n+-Si substrate and annealed at 950 ° for 30 min in air. The current IG under EL emission corresponded to the Fowler-Nordheim (FN) tunnel current. The EL intensity increased proportionally to IG to the n-th power, where n was about 1.2, and the EL spectra were independent of IG. The MOS device with the [(Gd + Dy)-Si-O] layer had the weakest EL in the UV range among the measured devices, while it had the strongest EL in the visible wavelength range. The UV and visible range EL originated from the intrashell transitions of 6P7/2- 8S7/2 in Gd3+ and 4F 9/2-6HJ/2 (J = 9, 11, 13, and 15) in Dy 3+, respectively. The devices with [(Gd/(Gd + La/Ca/Ba)- Si-O] layers emitted strong UV EL, which originated from the intrashell transitions of 6P7/2-8S7/2 in Gd3+, and had the moderate intensity of EL in the visible range. The insulator layers of EL devices had a thickness of 25-30nm and the double layer structure, whose top surface layer contained [Gd2O3+DyOx+(Gd + Dy)-Si-O]/[Gd2O3+La2O3/CaO/BaO+(Gd + La/Ca/Ba)-Si-O] silicate, while the underlayer was composed of SiOx-rich oxide with various rare earth and alkaline earth oxides.© 2014 The Japan Society of Applied Physics. Source

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