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Amagasaki, Japan

Mashiko T.,University of Shizuoka | Sanada T.,University of Shizuoka | Nishiyama I.,Daipla Wintes Co. | Horibe H.,Kanazawa Institute of Technology
Japanese Journal of Applied Physics | Year: 2012

We performed experiments to elucidate the physical action of a steam-water mixture jet, which we have proposed as a promising, environmentally friendly tool for cleaning surfaces. Photoresist-coated silicon wafers were adopted as the target and the jet performance of resist removal was evaluated, with several parameters being varied. We found that the resist-removal performance improves as the thickness or the mechanical strength of the resist film decreases, resist-wafer adhesivity decreases, or jet duration increases. The results imply that the essential part of the resist removal by the jet is a physical process including peel-off, in contrast to the established techniques such as the batch cleaning method utilizing chemical reactions. The results also indicate that the physical impact of the jet can be controlled, which will be a significant advantage in applying the jet as a cleaning technique. © 2012 The Japan Society of Applied Physics.

Angata Y.,Kanazawa Institute of Technology | Goto Y.,Kanazawa Institute of Technology | Takahashi S.,Kanazawa Institute of Technology | Kono A.,Kanazawa Institute of Technology | And 4 more authors.
Kagaku Kogaku Ronbunshu | Year: 2013

The effect of prebake (PB) temperature on chemical structure and removal by wet ozone of the photo-active compound (PAC) positive-tone novolak resin/diazonaphthoquinone by use of FT-IR, micro-sampling mass spectrometry (μ-MS) and thermogravimetry analyzer (TGA). Resist films prebaked at between 100 °C and 200 °C were completely removable by wet ozone, but the resist removal rate decreased with increasing PB temperature and decreased significantly between 140 °C and 160 °C. The FT-IR spectrum revealed desorption of N2 from the PAC near the PB temperature of 160 °C. On the other hand, the novolak resin did not change with PB temperature. The μ-MS results confirmed that the decomposition temperature of the novolak resin and PAC did not change with changes in PB temperature. TGA curves indicated that the amount of the solvent remaining in the resist film was substantially desorbed at PB temperatures between 140 °C and 160 °C. From these results, we concluded that the chemical structure and thermal cross-linking of the resist are not affected by changes in the PB temperature. In contrast, the evaporation of residual solvents in the resist film increases with increasing PB temperature, resulting in shrinkage of the film. The decrease in resist removal rate of about 60% between 140 °C and 160 °C was therefore concluded to be due to the curing of the film. © 2013 The Society of Chemical Engineers, Japan.

Iwamori S.,Tokai University | Yoshino K.,Iwasaki Electrical Co. | Matsumoto H.,Iwasaki Electrical Co. | Noda K.,Japan National Institute of Advanced Industrial Science and Technology | Nishiyama I.,Daipla Wintes Co.
Sensors and Actuators, B: Chemical | Year: 2012

Organic thin films prepared by physical vapor deposition (PVD) have complex structures compared to the pristine materials. Therefore, these thin films have potentials to show different surface properties. Poly(tetrafluoroethylene) (PTFE) is one of the fluorocarbon polymers, and fluorocarbon thin films deposited by an r.f. sputtering with a PTFE target and spin coating with PTFE dispersion on a quartz crystal were investigated to determine their suitability for application in active oxygen sensors. Active oxygen generated under ultraviolet irradiation was successfully detected from frequency shifts using the QCM electrode coated with the fluorocarbon thin films. The sensitivity of the thin film prepared by the r.f. sputtering for active oxygen was higher than that of the thin film prepared by the spin coating. It is known that molecular structures of the fluorocarbon thin film prepared by the r.f. sputtering with a PTFE target were quite different from pristine PTFE. It is considered that this is one of the reasons why the sensitivity of the sputtered thin film for active oxygen was higher than that of the thin film prepared by the spin coating. © 2012 Elsevier B.V. All rights reserved.

Ikeda Y.,Tokai University | Iwamori S.,Tokai University | Matsumoto H.,Iwasaki Electrical Co. | Yoshino K.,Iwasaki Electrical Co. | And 2 more authors.
Journal of the Vacuum Society of Japan | Year: 2013

Thermal degradation property of fluorocarbon thin film prepared by an r.f. sputtering and poly (tetrafluoroethylene) (PTFE) thin film prepared by a spin coating technique was analyzed with a micro sampling mass spectroscopy and an effect of atomic oxygen exposure on the property of these thin films was evaluated. Main thermal degradation products of the PTFE thin film are C 2F4 and C2F3, however those of the fluorocarbon thin film are CO2, CF3 and C 4F7. Fragments which represent CF3, C 2F5, C3F7, C3F 5, C4F7 were observed in the spectrum of sputtered fluorocarbon thin films, while they were hardly obaserved in that of PTFE thin film. It is considered that these fragments would relate the thermal stability of the fluorocarbon thin film.

Saito F.,University of Tokyo | Nishiyama I.,Daipla Wintes Co. | Hyodo T.,High Energy Accelerator Research Organization
Materials Letters | Year: 2012

"Cutting strength" is proposed as a new indicator of the resistance of materials to cutting. This indicator is the ratio of the cutting force in the orthogonal cutting and the cross section of the part of the specimen to be cut. It essentially depends only on the property of the material and is independent of the cutting width or depth. It can also give an indication of the resistance of surfaces to scratching. © 2011 Elsevier B.V.

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