DA Design Oy

Jokioinen, Finland

DA Design Oy

Jokioinen, Finland
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Quay R.,Fraunhofer Institute for Applied Solid State Physics | Waltereit P.,Fraunhofer Institute for Applied Solid State Physics | Kuhn J.,Fraunhofer Institute for Applied Solid State Physics | Bruckner P.,Fraunhofer Institute for Applied Solid State Physics | And 4 more authors.
IEEE MTT-S International Microwave Symposium Digest | Year: 2013

This paper reports on two AlGaN/GaN MMIC technologies, performances of MMICs and modules, and reliability for space applications at X-band to W-band frequencies. Quarter-micron gate length HEMTs deliver 5 W/mm output power density at 30 V drain bias with >58% PAE at 10 GHz operating frequency. Dual-stage 8 W output power MMICs for telemetry applications in space have a PAE of more than 50% at 8.5 GHz with a lifetime of 106 h at a channel temperature of 200°C. Space evaluation tests indicate a stability of this technology suitable for space. For scientific missions a high-gain high power amplifier MMIC and module have been developed for 90 GHz operation with up to 16 dB of linear gain and 400 mW of output power. © 2013 IEEE.

Mennella A.,University of Milan | Bersanelli M.,University of Milan | Butler R.C.,Istituto di Astrofisica Spaziale e Fisica Cosmica | Cuttaia F.,Istituto di Astrofisica Spaziale e Fisica Cosmica | And 84 more authors.
Astronomy and Astrophysics | Year: 2010

We present the calibration and scientific performance parameters of the Planck Low Frequency Instrument (LFI) measured during the ground cryogenic test campaign. These parameters characterise the instrument response and constitute our optimal pre-launch knowledge of the LFI scientific performance. The LFI shows excellent 1/f stability and rejection of instrumental systematic effects; its measured noise performance shows that LFI is the most sensitive instrument of its kind. The calibration parameters will be updated during flight operations until the end of the mission. © ESO, 2010.

Niaki S.H.A.,KTH Royal Institute of Technology | Jakobsen M.K.,Technical University of Denmark | Sulonen T.,DA Design Oy | Sander I.,KTH Royal Institute of Technology
Forum on Specification and Design Languages | Year: 2012

Electronic System Level (ESL) design of embedded systems proposes raising the abstraction level of the design entry to cope with the increasing complexity of such systems. To exploit the benefits of ESL, design languages should allow specification of models which are a) heterogeneous, to describe different aspects of systems; b) formally defined, for application of analysis and synthesis methods; c) executable, to enable early detection of specification; and d) parallel, to exploit the multi- and many-core platforms for simulation and implementation. We present a modeling library on top of SystemC, targeting heterogeneous embedded system design, based on four models of computation. The library has a formal basis where all elements are well defined and lead in construction of analyzable models. The semantics of communication and computation are implemented by the library, which allows the designer to focus on specifying the pure functional aspects. A key advantage is that the formalism is used to export the structure and behavior of the models via introspection as an abstract representation for further analysis and synthesis. © 2012 ECSI.

Niaki S.H.A.,KTH Royal Institute of Technology | Beserra G.S.,University of Brasilia | Andersen N.,Novelda AS | Verdon M.,DA Design Oy | Sander I.,KTH Royal Institute of Technology
Proceedings - SBCCI 2012: 25th Symposium on Integrated Circuits and Systems Design | Year: 2012

The design of today's electronic embedded systems is an increasingly complicated task. This is especially problematic for Small and Medium Enterprises (SMEs) which have limited resources. In this work, we identify a set of common design practices used in industry, with a special focus on problems faced by smaller companies, and formulate them as design scenarios. We show how SMEs can benefit from a system-level design approach by customizing a formal heterogeneous system modeling framework for each scenario. The applicability of this approach is demonstrated by two industrial use cases, an impulse-radio radar and a UART-based protocol. ©2012 IEEE.

Diebold S.,Osaka University | Kuhn J.,Fraunhofer Institute for Applied Solid State Physics | Hulsmann A.,Fraunhofer Institute for Applied Solid State Physics | Leuther A.,Fraunhofer Institute for Applied Solid State Physics | And 6 more authors.
2014 Asia-Pacific Microwave Conference Proceedings, APMC 2014 | Year: 2014

For radiometric application in the frequency range around 325 GHz, two low noise amplifier millimeter-wave monolithic integrated circuits have been developed. They use metamorphic high electron mobility transistors with a gate-length of 35 nm. The first amplifier only uses transistors in common-source configuration, whereas the second only employs transistors in cascode configuration. Their simulated and measured performance is compared to find which configuration is advantageous for the design of low noise amplifiers in this frequency range. Copyright 2014 IEICE.

Kaisti M.,DA Design OY | Kaisti M.,University of Turku | Altti M.,DA Design OY | Poutanen T.,DA Design OY | Poutanen T.,Elektrobit
IEEE Transactions on Microwave Theory and Techniques | Year: 2014

We present an uncertainty analysis of radiometer calibration. The procedure can be used to determine the uncertainty in the nominal brightness temperature of the unknown scene. A total power radiometer requires frequent calibration with known reference loads that are connected to the radiometer. Our analysis includes uncertainties from the radiometer calibration loads and from the connecting network (CN) that is required to multiplex calibration loads and scene to the radiometer input. We show the design and analysis of three calibration loads and how their uncertainties propagate from load terminals to the radiometer calibration plane and to the scene. All three loads, including a cryogenic load, are simple, inexpensive, and show great stability and accuracy. We give an uncertainty calculation example for our three calibration loads and for the CN. We validate our model and the long-term stability of the loads through measurements. The analysis is done at 52 GHz, but the analysis and the construction of the loads are generic and easily scalable to other frequencies. © 2014 IEEE.

Kaisti M.,DA Design OY | Kaisti M.,University of Turku | Altti M.,DA Design OY | Poutanen T.,DA Design OY | Poutanen T.,Bittium Wireless Ltd
Remote Sensing | Year: 2016

Total power radiometer has a simple configuration and the best theoretical resolution. Gain fluctuations and calibration errors, however, can induce severe errors in the solved scene brightness temperature. To estimate the overall radiometer performance we present a numerical simulation tool that can be used to determine the radiometric resolution. Our model considers three main components that degrade the radiometric resolution: thermal noise, 1/f noise and calibration errors. These error sources have long been known to exist, but comprehensive models able to account all these effects quantitatively and accurately in a practical manner have been missing. We have developed a radiometer simulation model that is able to produce radiometer signals that incorporate realistic radiometer effects that show up as noise and other errors in the radiometer video signal. Our simulation tool integrates the fundamental radiometer theories numerically and allows the investigation of different calibration schemes and receiver topologies. The model can be used as a guide for design and optimization as well as for verification of the radiometer performance. Moreover, it can be extended to a much larger and more complex radiometer systems allowing better system level performance estimation and optimization with minimal bread-board implementations. The model mimics real radiometer video data and thus the complete data analysis pipeline can be developed and verified before the real video data is available. In this paper, the model has been applied to a total power radiometer operating in the 52 GHz frequency range. © 2016 by the authors.

Karkkainen M.,Aalto University | Kantanen M.,VTT Technical Research Center of Finland | Caujolle-Bert S.,Aalto University | Caujolle-Bert S.,French National Center for Scientific Research | And 8 more authors.
IEEE Transactions on Terahertz Science and Technology | Year: 2014

To improve the performance of G-band equipment for humidity sounding of the atmosphere, a high-gain and low-noise amplifier is needed. Here, the performances of 165 and 183 GHz low-noise amplifier microchips intended for atmospheric water vapor profiling application are reported. The microchips are manufactured in metamorphic high-electron mobility transistor technology having a gate length of 50 nm. The on-wafer measured results show noise figures of 4.4-7.4 dB and 16-25 dB gain at the operating frequencies. In addition, two of the amplifiers were assembled in waveguide packages and the measured results show a gain of 19-20 dB and 7 dB noise figure at both 165 and 183 GHz. © 2014 IEEE.

Karkkainen M.,DA Design Oy | Kantanen M.,VTT Technical Research Center of Finland | Alanne A.,DA Design Oy | Viitanen J.,DA Design Oy | And 5 more authors.
2016 Global Symposium on Millimeter Waves, GSMM 2016 and ESA Workshop on Millimetre-Wave Technology and Applications | Year: 2016

The reliability of the equipment that will be used in the MetOp Second Generation satellites is crucial, since there are significant storage and in-operation times. To evaluate the reliability performance of these receivers ESA has set up projects to assess these issues in advance. The most critical parts within the receivers of the atmospheric sounder and imager instruments are identified to be the detectors and the low-noise amplifiers. These components have a dedicated reliability assessment program within the projects on module level and the results can help in evaluating the most critical reliability aspects that should be investigated more carefully. In this paper, the 54 GHz (V-band) and 118 GHz (F-band) low-noise amplifier module design and reliability test results are presented. © 2016 IEEE.

Abu Bakar F.,Aalto University | Holmberg J.,VTT Technical Research Center of Finland | Nieminen T.,Aalto University | Nehal Q.,Aalto University | And 5 more authors.
2012 19th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2012 | Year: 2012

An integrated receiver consisting of RF front ends, analog baseband chain with an analog to digital converter (ADC) for a Synthetic Aperture Radar (SAR) implemented in 130 nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88 mm2. The RF front end consists of three parallel signal channels intended for L,C and X-band of the SAR receiver. The baseband (BB) is selectable between 50 MHz and 160 MHz bandwidths through switches. The ADC has selectable mode of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 dB and 37 dB and noise figure of 11 dB and 13.5 dB for 160 MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2 V supply voltage, dissipate maximum power of 650 mW with 50 MHz baseband and 8 bit mode ADC, and maximum power of 800 mW with 160 MHz baseband and 8 bit mode ADC. © 2012 IEEE.

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