Abu Bakar F.,Aalto University |
Abu Bakar F.,University Malaysia Perlis |
Holmberg J.,VTT Technical Research Center of Finland |
Nieminen T.,Aalto University |
And 6 more authors.
Analog Integrated Circuits and Signal Processing | Year: 2013
An integrated receiver consisting of RF front ends, analog baseband (BB) chain with an analog to digital converter (ADC) for a synthetic aperture radar (SAR) implemented in 130 nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88 mm2. The RF front end consists of three parallel signal channel intended for L, C and X-band of the SAR receiver. The BB is selectable between 50 and 160 MHz bandwidths through switches. The ADC has selectable modes of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 and 37 dB and noise figure of 11 and 13.5 dB for 160 MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2 V supply voltage, dissipate maximum power of 650 mW with 50 MHz BB and 8 bit mode ADC, and maximum power of 800 mW with 160 MHz BB and 8 bit mode ADC. © 2013 Springer Science+Business Media New York. Source
Kantanen M.,VTT Technical Research Center of Finland |
Weissbrodt E.,Fraunhofer Institute for Applied Solid State Physics |
Varis J.,VTT Technical Research Center of Finland |
Leuther A.,Fraunhofer Institute for Applied Solid State Physics |
And 9 more authors.
IET Microwaves, Antennas and Propagation | Year: 2015
Three active cold load circuits operating at millimetre-wave frequencies are presented. The circuits have been manufactured using 100 nm metamorphic high electron mobility transistor technology. On-wafer measurements of noise temperature and match are presented. Measured noise temperatures are 75 K, 141 K, and 170 K at 31.4 GHz, 52 GHz, and 89 GHz, respectively. Measured reflection coefficients are better than -19 dB for all designs. © The Institution of Engineering and Technology 2015. Source