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San Diego, CA, United States

Techniques for generating EUV light include directing a first pulse of radiation toward a target material droplet to form a modified droplet, the first pulse of radiation having an energy sufficient to alter a shape of the target material droplet; directing a second pulse of radiation toward the modified droplet to form an absorption material, the second pulse of radiation having an energy sufficient to change a property of the modified droplet, the property being related to absorption of radiation; and directing an amplified light beam toward the absorption material, the amplified light beam having an energy sufficient to convert at least a portion of the absorption material into extreme ultraviolet (EUV) light.


A system for an extreme ultraviolet light source includes one or more optical elements positioned to receive a reflected amplified light beam and to direct the reflected amplified light beam into first, second, and third channels, the reflected amplified light beam including a reflection of at least a portion of an irradiating amplified light beam that interacts with a target material; a first sensor that senses light from the first channel; a second sensor that senses light from the second channel and the third channel, the second sensor having a lower acquisition rate than the first sensor; and an electronic processor coupled to a computer-readable storage medium, the medium storing instructions that, when executed, cause the processor to: receive data from the first sensor and the second sensor, and determine, based on the received data, a location of the irradiating amplified light beam relative to the target material in more than one dimension.


Patent
Cymer Inc | Date: 2014-03-06

Techniques are described that enhance power from an extreme ultraviolet light source with feedback from a target material that has been modified prior to entering a target location into a spatially-extended target distribution or expanded target. The feedback from the spatially-extended target distribution provides a nonresonant optical cavity because the geometry of the path over which feedback occurs, such as the round-trip length and direction, can change in time, or the shape of the spatially-extended target distribution may not provide a smooth enough reflectance. However, it may be possible that the feedback from the spatially-extended target distribution provides a resonant and coherent optical cavity if the geometric and physical constraints noted above are overcome. In any case, the feedback can be generated using spontaneously emitted light that is produced from a non-oscillator gain medium.


Patent
Cymer Inc | Date: 2014-06-04

A photolithography method includes instructing an optical source to produce a pulsed light beam; scanning the pulsed light beam across a wafer of a lithography exposure apparatus to expose the wafer with the pulsed light beam; during scanning of the pulsed light beam across the wafer, receiving a characteristic of the pulsed light beam at the wafer; receiving a determined value of a physical property of a wafer for a particular pulsed light beam characteristic; and based on the pulsed light beam characteristic that is received during scanning and the received determined value of the physical property, modifying a performance parameter of the pulsed light beam during scanning across the wafer.


An EUV light source target material handling system is disclosed which may comprise a droplet generator having a target material reservoir in which the target material may be replenished while a nozzle portion of the droplet generator is maintained at temperature. Also disclosed is a system for selectively draining spent target material.

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