San Jose, CA, United States
San Jose, CA, United States

Time filter

Source Type

Hsueh F.-K.,National Nano Device Laboratories | Hsueh F.-K.,National Chiao Tung University | Lee Y.-J.,National Nano Device Laboratories | Lee Y.-J.,National Chung Hsing University | And 4 more authors.
IEEE Transactions on Electron Devices | Year: 2011

Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However, the details of the kinetics and mechanisms for microwave annealing are far from well understood. In this paper, 20-keV arsenic (As) and 15-keV phosphorus (P) implants, in a dose range from 1 to 5 × 10-15cm2, were annealed by microwave methods at temperatures below 500 °C. These junctions were characterized by profile studies with secondary ion mass spectrometry and spreading resistance profiling, sheet resistance with four-point probe, and extensive use of cross-sectional transmission electron microscopy to follow the regrowth of the as-implanted amorphous layers created by the implantation. The amorphous-layer regrowth was observed to be uneven in time, with relatively little amorphous/crystalline interface motion for less than 50 s, followed by rapid regrowth for longer times. Sheet resistance values continued to drop for anneal times after the regrowth process was complete, with some evidence of dopant deactivation for anneal times of 600 s. © 2011 IEEE.


Lee Y.-J.,National Chung Hsing University | Tsai B.-A.,National Chung Hsing University | Lai C.-H.,Chung Hua University | Chen Z.-Y.,Chung Hua University | And 4 more authors.
IEEE Electron Device Letters | Year: 2013

In this letter, low-temperature (480 °C) microwave annealing (MWA) for MOS devices with high-k/metal gate-stacks is demonstrated. The capacitance-voltage (C-V) characteristics of the MOS gate-stacks, TiN/HfO 2, and TaN/HfO2, after different annealing methods are discussed. The increases in equivalent oxide thickness (EOT) of the MOS devices after dopant activation processing can be eliminated using low temperature MWA. In addition, the short channel effects in nMOSFETs annealed by MWA can be also improved because of the suppression of dopant diffusion and stabilization of EOT.. © 2013 IEEE.


Lee Y.-J.,National Nano Device Laboratories | Lee Y.-J.,National Chung Hsing University | Cho T.-C.,National Chiao Tung University | Chuang S.-S.,National Chiao Tung University | And 9 more authors.
IEEE Transactions on Electron Devices | Year: 2014

Microwave annealing (MWA) and rapid thermal annealing (RTA) of dopants in implanted Si are compared in their abilities to produce very shallow and highly activated junctions. First, arsenic (As), phosphorus (P), and B2 implants in Si substrate were annealed by MWA at temperatures below 550 °C. Next, enhancing the substitutional carbon concentration ([C]sub) by cluster carbon implantation in (100) Si substrates with MWA or RTA techniques was investigated. Annealing temperatures and time effects were studied. Different formation mechanisms of SiCx layer were observed. In addition, substrate temperature is an important factor for dopant activation during MWA and in situ doped a-Si on oxide/Si substrate or glass were compared to elucidate the substrate temperature effect. After the discussion of dopant activation in Si substrates, low temperature formation of ultrathin NiGe layer is presented. Ultrathin NiGe films with low sheet resistance have been demonstrated with a novel two-step MWA process. In the two-step MWA process, the first step anneals the sample with low power MWA, and the second step applies higher power MWA for reducing sheet resistance. During fixed-frequency microwave heating, standing wave patterns may be present in the MWA chamber resulting in nodes and antinodes and thermal variations over the process wafer. Therefore, the effects of Si or quartz susceptor wafers on dopant activation and sheet resistance uniformity during fixed-frequency MWA were investigated. © 1963-2012 IEEE.


Lee Y.-J.,National Nano Device Laboratories | Lee Y.-J.,National Chung Hsing University | Hsueh F.-K.,National Nano Device Laboratories | Hsueh F.-K.,National Chiao Tung University | And 3 more authors.
IEEE Electron Device Letters | Year: 2012

Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However, during conventional fixed-frequency microwave heating, standing wave patterns can be established in the microwave processing chamber, resulting in nodes and antinodes over the processing area, resulting in thermal variations over the process wafer. In this letter, the effects of Si or quartz susceptor wafers on dopant activation and sheet resistance uniformity during fixed-frequency microwave anneal are studied. The composition, number, and spacing of susceptor wafers were varied in a systematic fashion in these experiments. © 2011 IEEE.


Current M.I.,Current Scientific | Lukaszek W.,Wafer Charging Monitors | Farrens S.,Hidden Glenn Consulting | Fong T.,Silicon Genesis
2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015 | Year: 2015

Preliminary studies of radiation damage and recovery of E2PROM sensor devices following exposure to a high-dose, 1 MeV proton beam give encouragement to the use of H-cut and layer transfer methods for vertical integration of 3D-IC's with fully-formed CMOS devices and metal interconnect. © 2015 IEEE.


Current M.I.,Current Scientific | Eddy R.,Core Systems | Hudak C.,Core Systems | Serfass J.,Evans Analytical Group | Mount G.,Evans Analytical Group
AIP Conference Proceedings | Year: 2012

Mass overlaps occurring as a result of extraction of ions from an arc discharge and gas collisions, producing molecular break up and charge exchange in the accelerator beamline, are examined for ion implantation into compound semiconductors. The effects of the choice of plasma gas elements for Be + implants are examined as an example. © 2012 American Institute of Physics.


Current M.,Current Scientific | Chism W.,Xitronix | Yoo W.S.,GIST Inc | Vartanian V.,SEMATECH
AIP Conference Proceedings | Year: 2011

Photoreflectance (PR), using a uv (374 nm) diode laser probe beam, and Raman spectroscopy, using a multi-wavelength Ar + laser coupled to a high-resolution multi-wavelength spectrometer, were used to characterize the strain relaxation of Si top layers grown on a graded and relaxed SiGe buffer stack with a final Ge concentration of 20%. The Si top layer thicknesses ranged from 1.6 to 18 nm. Considerable radial variation in the strain relaxation was seen in all sampled wafers, highlighting the need for rapid, local strain characterization. Strong correlation between shift in the Si layer dielectric response, measured by uv-PR, and the Si top layer strain, measured by Raman, is reported. © 2011 American Institute of Physics.


Springer J.,CORE Systems | Wriggins W.,CORE Systems | Kusterer J.,Texas Instruments | Zotter K.,Texas Instruments | Current M.I.,Current Scientific
Proceedings of the International Conference on Ion Implantation Technology | Year: 2014

Wafer/pad temperatures are measured for various elastomer materials for control of wafer temperatures during high-power implantation to less than 40 C. Wafer/pad temperatures during and directly following implant are monitored by in-situ IR sensors and tracked over long operational cycles. Beneficial effects of wafer temperature control is noted for gain characteristics of modern IC devices. © 2014 IEEE.


Chism W.,Xitronix | Chism W.,SEMATECH | Current M.,Current Scientific | Current M.,SEMATECH | Vartanian V.,SEMATECH
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Year: 2010

Photoreflectance (PR) provides an optical means for rapid and precise measurement of near-surface electric fields in semiconductor materials. This article details the use of PR to characterize dopant activation in ultrashallow junction (USJ) structures formed using millisecond annealing processes. USJ structures were formed in silicon using 500 eV B implantation with a dose of 1015 /cm2, followed by flash anneals at 1250-1350 °C. Reference metrology was performed using secondary ion mass spectrometry and various sheet resistance (Rs) methods. Methods to calibrate PR signals to active carrier concentration in USJ structures, including halo-doped samples, are described. PR is shown to be highly sensitive to active dopant concentrations in USJ structures formed by millisecond annealing. © 2010 American Vacuum Society.


Seidel T.E.,Seitek50 | Goldberg A.,Schrodinger | Halls M.D.,Schrodinger | Current M.I.,Current Scientific
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | Year: 2016

Simulations for the nucleation and growth of phosphorus films were carried out using density functional theory. The surface was represented by a Si9H12 truncated cluster surface model with 2 × 1-reconstructured (100) Si-OH terminations for the initial reaction sites. Chemistries included phosphorous halides (PF3, PCl3, and PBr3) and disilane (Si2H6). Atomic layer deposition (ALD) reaction sequences were illustrated with three-dimensional molecular models using sequential PF3 and Si2H6 reactions and featuring SiFH3 as a byproduct. Exothermic reaction pathways were developed for both nucleation and growth for a Si-OH surface. Energetically favorable reactions for the deposition of four phosphorus atoms including lateral P-P bonding were simulated. This paper suggests energetically favorable thermodynamic reactions for the growth of elemental phosphorus on (100) silicon. Phosphorus layers made by ALD are an option for doping advanced fin field-effect transistors (FinFETs). Phosphorus may be thermally diffused into the silicon or recoil knocked in; simulations of the recoil profile of phosphorus into a FinFET surface are illustrated. © 2015 American Vacuum Society.

Loading Current Scientific collaborators
Loading Current Scientific collaborators