Zhang C.,Nanjing Southeast University |
Liu S.,Nanjing Southeast University |
Zhang Y.,Nanjing Southeast University |
Sun W.,Nanjing Southeast University |
And 5 more authors.
Dongnan Daxue Xuebao (Ziran Kexue Ban)/Journal of Southeast University (Natural Science Edition) | Year: 2015
The negative bias temperature instability (NBTI) degradation mechanism and the influences of the gate oxide field and the channel carrier density on the NBTI are investigated for a P-type metallic oxide semiconductor field effect transistor (MOSFET). First, the interface damages induced by the NBTI stresses are measured by the charge pumping (CP) experiments. Through analyzing CP results with the technology computer aided design (TCAD) simulations, it is shown that the NBTI degradation is dominated by the interface states generation in the channel region, while the influence of charge injection is relatively ignorable. Then, by applying the substrate bias, the constant channel carrier density is maintained when the gate oxide electric field is increased. As a result, the influences of gate oxide electric field and channel carrier density on the NBTI degradations are investigated, respectively. Finally, by comparing the NBTI degradation and the influence factors variations under different substrate bias and gate bias conditions, it is proved that the NBTI effect of the pMOSFET is determined by the gate oxide electric field, and the influence of the channel carrier density on the NBTI is relatively negligible. ©, 2015, Southeast University. All right reserved. Source