Santa Clara, CA, United States
Santa Clara, CA, United States

Crocus Technology, founded in 2006, is a venture-capital-backed semiconductor startup company developing magnetoresistive random-access memory technology. The company's products originated in a Grenoble-based Spintec laboratory and its technology is licensed for stand-alone and embedded chip applications. Wikipedia.


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Patent
Ibm and Crocus Technology | Date: 2016-11-09

A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.


A magnetic memory device (100) comprising a plurality of magnetic units (1), each unit including a first and second magnetic tunnel junctions (2, 2) electrically connecting in series by a current line (3) and a strap (7), each magnetic unit comprising a first and second storage layer (23, 23) having a first and second storage magnetization (230, 230) and a first and second sense magnetic layer (21, 21) having a first and second senses magnetization (210, 210); a field line (4) configured to provide an input signal (41) generating a first and second magnetic field (42, 42) for varying the first and second sense magnetization (210, 210); each magnetic unit (1) being provided with a data state such that the first and second storage magnetizations (230, 230) are aligned in opposed directions; the first and second magnetic field (42, 42) being adapted for varying respectively the first and second sense magnetization (210, 210) in a first and second direction opposed to the first direction.


A multibit MRAM cell including a magnetic tunnel junction including a sense layer having a freely orientable sense magnetization; a tunnel barrier layer; and a synthetic antiferromagnet storage layer having a first and second storage layer. The sense magnetization induces a dipolar field having a magnitude above a spin-flop field of the storage layer. The MRAM cell also includes aligning means for aligning the sense magnetization in a plurality of distinct orientations such as to encode a plurality of distinct logic states in the MRAM cell. The present disclosure also concerns a method for operating the multibit MRAM cell.


Patent
Ibm and Crocus Technology | Date: 2017-02-14

A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.


Patent
International Business Machines Coporation and Crocus Technology | Date: 2016-04-28

A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing. A tunnel barrier is disposed adjacent to a ferromagnetic sense layer and a ferromagnetic storage layer, such that the tunnel barrier is sandwiched between the ferromagnetic sense layer and the ferromagnetic storage layer. An antiferromagnetic pinning layer is disposed adjacent to the ferromagnetic storage layer. The pinning layer pins a magnetic moment of the storage layer until heating is applied. The storage layer includes a non-magnetic material to reduce a storage layer magnetization as compared to not having the non-magnetic material. The sense layer includes the non-magnetic material to reduce a sense layer magnetization as compared to not having the non-magnetic material. A reduction in the storage layer magnetization and sense layer magnetization reduces the magnetostatic interaction between the storage layer and sense layer, resulting in less read/write power.


A magnetic device (100) configured to perform an analog adder circuit function and comprising a plurality of magnetic units, each including n magnetic tunnel junction (2, 2, 2, 2, ...) electrically connected in series via a current line (3), each magnetic tunnel junction comprising a storage magnetic layer (23) having a storage magnetization (230), a sense magnetic layer (21) having a sense magnetization (210), and a tunnel barrier layer (22); n input lines (4, 4, 4, 4, ...), each being configured to generate a magnetic field (42, 42, 42, 42, ...) adapted for varying a direction of the sense magnetization (210) and a resistances (R_(1), R_(2)) of the corresponding magnetic tunnel junction of the n magnetic tunnel junctions, based on a corresponding input (41, 41, 41, 41, ...); wherein each of the n magnetic units is configured to add said n inputs (41, 41, 41 , 41, ...) to generate an output signal (V_(out)) that varies in response to the n resistances (R_(1), R_(2), R_(3), R_(4), ...).


An apparatus includes a circuit including multiple magnetic tunnel junctions, the circuit configured to convert a quadrature modulated magnetic field to a quadrature modulated electrical signal, each magnetic tunnel junction including a storage layer having a storage magnetization and a sense layer having a sense magnetization, each magnetic tunnel junction being configured such that the sense magnetization and impedance of each magnetic tunnel junction vary in response to the quadrature modulated magnetic field. The apparatus further includes a module configured to demodulate the quadrature modulated electrical signal to recover a signal encoded in the quadrature modulated magnetic field.


An apparatus includes circuits and a module configured to determine an external magnetic field based on a parameter of each circuit. Each circuit includes an array of magnetic tunnel junctions partitioned into subarrays. The magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel. The subarrays are connected in series. Each magnetic tunnel junction includes a storage layer having a storage magnetization and a sense layer having a sense magnetization. Each magnetic tunnel junction is configured such that the sense magnetization and impedance of each magnetic tunnel junction vary in response to an external magnetic field. The parameter of each circuit varies based on a combined impedance of the multiple magnetic tunnel junctions. The module is implemented in at least one of a memory or a processing device.


The present disclosure concerns a magnetic sensor device (100) for sensing an external magnetic field, comprising a plurality of MLU cells (1), each MLU cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21) having a sense magnetization (210) freely orientable in the external magnetic field; a storage layer (23) having a storage magnetization (230); and a tunnel barrier layer (22) between the sense layer (21) and the storage layer (23); the magnetic sensor device (100) further comprising a stress inducing device (6) configured for applying an anisotropic mechanical stress on the magnetic tunnel junction (2) such as to induce a stress-induced magnetic anisotropy (271, 272) on at least one of the sense layer (21) and the storage layer (23); and the stress-induced magnetic anisotropy (271, 272) induced by the stress inducing device corresponding substantially to a net magnetic anisotropy (280) of said at least one of the sense layer (21) and the storage layer (23). The magnetic sensor device can be programmed easily and has improved sensitivity.


An apparatus includes circuits including a first circuit and a second circuit, each circuit including subarrays of magnetic tunnel junctions, where: (1) the magnetic tunnel junctions in each subarray are arranged in rows, the magnetic tunnel junctions in each row are connected in series, and the rows are connected in parallel; and (2) the subarrays are connected in series. The apparatus further comprises a field line configured to generate a first magnetic field for configuring an operating point of the first circuit based on a current flow through the field line, where the impedance of a subset of the plurality of rows in each subarray of magnetic tunnel junctions included in the first circuit is configured based on the first magnetic field.

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