Santa Clara, CA, United States
Santa Clara, CA, United States

Crocus Technology, founded in 2006, is a venture-capital-backed semiconductor startup company developing magnetoresistive random-access memory technology. The company's products originated in a Grenoble-based Spintec laboratory and its technology is licensed for stand-alone and embedded chip applications. Wikipedia.

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Patent
Ibm and Crocus Technology | Date: 2017-02-14

A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.


Patent
Crocus Technology | Date: 2017-07-26

A device has magnetic sensors and magnets in an array on a flexible substrate. Each magnetic sensor is sensitive to immediately proximate magnets. At least one controller evaluates magnetic sensor signals from the magnetic sensors produced in response to deformation of the flexible substrate. A device for surface shape analysis includes a flexible substrate supporting magnetic sensors and magnets or current conductors operative as a magnetic field source. One or more controller circuits receive magnetic sensor signals from the magnetic sensors.


A device has a flexible substrate supporting an array of magnetic sensors exposed to a uniform external magnetic field. One or more controllers receive magnetic sensor signals from the magnetic sensors. The one or more controllers collect reference magnetic sensor signals when the flexible substrate is aligned with the uniform external magnetic field. The one or more controllers collect first polarity magnetic sensor signals in response to deformation of the flexible substrate in a first direction. The one or more controllers collect second polarity magnetic sensor signals in response to deformation of the flexible substrate in a second direction. The magnetic sensor signals establish a profile of the orientation of the flexible substrate with respect to the uniform external magnetic field.


Patent
Crocus Technology | Date: 2017-08-09

Electrical interconnecting device (10) comprising: a magnetic tunnel junction (2); a strap portion (7) electrically connecting a lower end of the magnetic tunnel junction (2); a current line portion (3) electrically connecting an upper end of the magnetic tunnel junction (2); an upper metallic stud (8) electrically connecting a lower metallic stud (5) through a via (6); the strap portion (7) being in direct electrical contact with the via (6), such that a current passing in the magnetic tunnel junction (2) flows directly between the strap portion () and the via (6) and between the via (6) and the lower metallic stud (5) or the upper metallic stud (8).


A magnetic memory device (100) comprising a plurality of magnetic units (1), each unit including a first and second magnetic tunnel junctions (2, 2) electrically connecting in series by a current line (3) and a strap (7), each magnetic unit comprising a first and second storage layer (23, 23) having a first and second storage magnetization (230, 230) and a first and second sense magnetic layer (21, 21) having a first and second senses magnetization (210, 210); a field line (4) configured to provide an input signal (41) generating a first and second magnetic field (42, 42) for varying the first and second sense magnetization (210, 210); each magnetic unit (1) being provided with a data state such that the first and second storage magnetizations (230, 230) are aligned in opposed directions; the first and second magnetic field (42, 42) being adapted for varying respectively the first and second sense magnetization (210, 210) in a first and second direction opposed to the first direction.


A multi-bit magnetic random access memory (MRAM) cell including a magnetic tunnel junction including: a first magnetic storage layer, a second magnetic storage layer, a magnetic sense layer, a first spacer layer between the first magnetic storage layer and the magnetic sense layer, and a second spacer layer between the second magnetic storage layer and the sense layer. The first and second storage magnetization are switchable between m directions to store data corresponding to one of m^(2 )logic states, with m>2. The present disclosure further concerns a method for writing and reading to the MRAM cell and to memory devices including multi-bit MRAM cells.


Patent
Crocus Technology | Date: 2017-04-12

An apparatus has magnetic logic units a logic circuit configured to receive a serial input bit stream at an input node. Individual bits of data from the serial input bit stream are serially written into individual magnetic logic units without buffering the serial input bit stream between the input node and the individual magnetic logic units. Individual bits of data from individual magnetic logic units are serially read to produce a serial output bit stream on an output node without buffering the serial output bit stream between the individual magnetic logic units and the output node.


Patent
Ibm and Crocus Technology | Date: 2016-11-09

A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.


Patent
Crocus Technology | Date: 2017-09-20

A magnetoresistive-based signal shaping circuit (100) for audio applications comprising: a field emitting device (4) configured for receiving an input current signal (41) from an audio signal source and for generating a magnetic field (42) in accordance with the input current signal (41), a first magnetoresistive element (10) electrically connected in series to a second magnetoresistive element (11), each of the first and second magnetoresistive element (10, 11) comprising at least one magnetoresistive cell (1) having an electrical resistance (R_(b1), R_(b2)) that varies with the magnetic field (42); the magnetoresistive-based signal shaping device (100) providing an output signal (V_(out)) across the second magnetoresistive element (11) when an input voltage (V_(dd)) is applied across the first and second magnetoresistive element (10, 11) in series; the output signal (V_(out)) being a function of the electrical resistance (R_(b1), R_(b2)) and yielding a dynamic range compression effect.


The present disclosure concerns a magnetoresistive element (1) comprising: a storage layer (21) having a first storage magnetostriction; a sense layer (23) having a first sense magnetostriction; a barrier layer (22) between and in contact with the storage and sense layer (21, 23); wherein the magnetoresistive element (1) further comprises a compensating ferromagnetic layer (25) having a second magnetostriction different from the first storage magnetostriction and/or sense magnetostriction, and adapted to compensate the first storage magnetostriction and/or the first sense magnetostriction so that a net magnetostriction of the storage layer (21) and/or sense layer (23) is adjustable between -10 ppm et +10 ppm or more negative than -10 ppm by adjusting a thickness of the compensating ferromagnetic layer (25). The present disclosure concerns also concerns a magnetic device comprising the magnetoresistive element.

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