Santa Clara, CA, United States
Santa Clara, CA, United States

Crocus Technology, founded in 2006, is a venture-capital-backed semiconductor startup company developing magnetoresistive random-access memory technology. The company's products originated in a Grenoble-based Spintec laboratory and its technology is licensed for stand-alone and embedded chip applications. Wikipedia.


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Patent
Ibm and Crocus Technology | Date: 2016-11-09

A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.


A magnetic memory device (100) comprising a plurality of magnetic units (1), each unit including a first and second magnetic tunnel junctions (2, 2) electrically connecting in series by a current line (3) and a strap (7), each magnetic unit comprising a first and second storage layer (23, 23) having a first and second storage magnetization (230, 230) and a first and second sense magnetic layer (21, 21) having a first and second senses magnetization (210, 210); a field line (4) configured to provide an input signal (41) generating a first and second magnetic field (42, 42) for varying the first and second sense magnetization (210, 210); each magnetic unit (1) being provided with a data state such that the first and second storage magnetizations (230, 230) are aligned in opposed directions; the first and second magnetic field (42, 42) being adapted for varying respectively the first and second sense magnetization (210, 210) in a first and second direction opposed to the first direction.


A multibit MRAM cell including a magnetic tunnel junction including a sense layer having a freely orientable sense magnetization; a tunnel barrier layer; and a synthetic antiferromagnet storage layer having a first and second storage layer. The sense magnetization induces a dipolar field having a magnitude above a spin-flop field of the storage layer. The MRAM cell also includes aligning means for aligning the sense magnetization in a plurality of distinct orientations such as to encode a plurality of distinct logic states in the MRAM cell. The present disclosure also concerns a method for operating the multibit MRAM cell.


Patent
Ibm and Crocus Technology | Date: 2017-02-14

A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. A magnetic liner encapsulates the conductor and is gapped apart from the encapsulating layer covering the sidewall portions of the stack.


Patent
Crocus Technology | Date: 2017-04-12

An apparatus has magnetic logic units a logic circuit configured to receive a serial input bit stream at an input node. Individual bits of data from the serial input bit stream are serially written into individual magnetic logic units without buffering the serial input bit stream between the input node and the individual magnetic logic units. Individual bits of data from individual magnetic logic units are serially read to produce a serial output bit stream on an output node without buffering the serial output bit stream between the individual magnetic logic units and the output node.


Patent
Crocus Technology | Date: 2017-08-09

Electrical interconnecting device (10) comprising: a magnetic tunnel junction (2); a strap portion (7) electrically connecting a lower end of the magnetic tunnel junction (2); a current line portion (3) electrically connecting an upper end of the magnetic tunnel junction (2); an upper metallic stud (8) electrically connecting a lower metallic stud (5) through a via (6); the strap portion (7) being in direct electrical contact with the via (6), such that a current passing in the magnetic tunnel junction (2) flows directly between the strap portion () and the via (6) and between the via (6) and the lower metallic stud (5) or the upper metallic stud (8).


A device has a flexible substrate supporting an array of magnetic sensors exposed to a uniform external magnetic field. One or more controllers receive magnetic sensor signals from the magnetic sensors. The one or more controllers collect reference magnetic sensor signals when the flexible substrate is aligned with the uniform external magnetic field. The one or more controllers collect first polarity magnetic sensor signals in response to deformation of the flexible substrate in a first direction. The one or more controllers collect second polarity magnetic sensor signals in response to deformation of the flexible substrate in a second direction. The magnetic sensor signals establish a profile of the orientation of the flexible substrate with respect to the uniform external magnetic field.


Patent
Crocus Technology | Date: 2017-07-26

A device has magnetic sensors and magnets in an array on a flexible substrate. Each magnetic sensor is sensitive to immediately proximate magnets. At least one controller evaluates magnetic sensor signals from the magnetic sensors produced in response to deformation of the flexible substrate. A device for surface shape analysis includes a flexible substrate supporting magnetic sensors and magnets or current conductors operative as a magnetic field source. One or more controller circuits receive magnetic sensor signals from the magnetic sensors.


A magnetic device (100) configured to perform an analog adder circuit function and comprising a plurality of magnetic units, each including n magnetic tunnel junction (2, 2, 2, 2, ...) electrically connected in series via a current line (3), each magnetic tunnel junction comprising a storage magnetic layer (23) having a storage magnetization (230), a sense magnetic layer (21) having a sense magnetization (210), and a tunnel barrier layer (22); n input lines (4, 4, 4, 4, ...), each being configured to generate a magnetic field (42, 42, 42, 42, ...) adapted for varying a direction of the sense magnetization (210) and a resistances (R_(1), R_(2)) of the corresponding magnetic tunnel junction of the n magnetic tunnel junctions, based on a corresponding input (41, 41, 41, 41, ...); wherein each of the n magnetic units is configured to add said n inputs (41, 41, 41 , 41, ...) to generate an output signal (V_(out)) that varies in response to the n resistances (R_(1), R_(2), R_(3), R_(4), ...).


The present disclosure concerns a magnetic sensor device (100) for sensing an external magnetic field, comprising a plurality of MLU cells (1), each MLU cell (1) comprising a magnetic tunnel junction (2) including a sense layer (21) having a sense magnetization (210) freely orientable in the external magnetic field; a storage layer (23) having a storage magnetization (230); and a tunnel barrier layer (22) between the sense layer (21) and the storage layer (23); the magnetic sensor device (100) further comprising a stress inducing device (6) configured for applying an anisotropic mechanical stress on the magnetic tunnel junction (2) such as to induce a stress-induced magnetic anisotropy (271, 272) on at least one of the sense layer (21) and the storage layer (23); and the stress-induced magnetic anisotropy (271, 272) induced by the stress inducing device corresponding substantially to a net magnetic anisotropy (280) of said at least one of the sense layer (21) and the storage layer (23). The magnetic sensor device can be programmed easily and has improved sensitivity.

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