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Hachiōji, Japan

Nishino H.,Tohoku University | Yoshida S.,Tohoku University | Kojima A.,Crestec Corporation | Ikegami N.,Tokyo University of Agriculture and Technology | And 3 more authors.
Electronics and Communications in Japan | Year: 2016

SUMMARY This paper reports on the development of a fundamental process for a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scale integrated circuit (LSI). The emitter array consists of 100 × 100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operating voltages. Isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate for independent control of each emitter using the LSI. The integration process of the emitter array with LSI and an extraction electrode plate was also developed based on Au-In and polymer bonding technologies. © 2016 Wiley Periodicals, Inc. Source


Nishino H.,Tohoku University | Yoshida S.,Tohoku University | Kojima A.,Crestec Corporation | Ikegami N.,Tokyo University of Agriculture and Technology | And 3 more authors.
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) | Year: 2014

This paper mainly reports the process development of a Pierce-type nanocrystalline Si (nc-Si) electron emitter array for massively parallel electron beam (EB) lithography based on active-matrix operation using a large-scaled integrated circuit (LSI). The emitter array consists of 100×100 hemispherical emitters formed by isotropic wet etching of Si. EB resist patterning was demonstrated by 1:1 projection exposure using a discrete emitter array at CMOS-compatible operation voltages. To independently control each emitter using the LSI, isolation trenches filled with benzocyclobutene (BCB) were fabricated in the Si substrate. In addition, the integration process of the emitter array, the LSI and an extraction electrode plate was developed based on Au-In and polymer bonding technologies. © 2014 IEEE. Source


Trademark
Crestec Inc. | Date: 2006-04-04

[ Computer programs, recorded downloadable computer software programs, pre-recorded magnetic data media, pre-recorded optical data media, pre-recorded optical discs, pre-recorded magnetic discs, pre-recorded floppy disks, all featuring writing, editing and translation of a law database; blank read-only memory compact discs; computer game programs; computer operating programs; phonograph records featuring writing, editing and translation of a law database; electronic publications, namely, books, magazines, and manuals, all for writing, editing, and translating a law database recorded on computer media; metronomes; electronic circuits and CD-ROMS recorded with automatic performance programs for electronic musical instruments ]. [ Industrial packaging containers of paper; paper and cardboard; booklets,catalogues, handbooks, manuals, pamphlets, prospectuses, and printed teaching materials all featuring cars, motorbikes, outboard motors, snowmobiles, printers, copying machines, facsimile machines, cellular phones, musical instruments, electronic musical instruments, digital cameras, household electric appliances, and computer software; graphic prints, namely, lithographs ]. [ Copy writing for others for advertising; conducting marketing research studies; ] information processing by using computers, namely, collection, preparation, composition, storage, processing, acquisition and provision of business information, data, statistics and indices. Warehousing services, rental of warehouse space. Bookbinding, photogravure, printing. Reference libraries of literature and documentary records; publication of books, translation. Computer software design for others; computer programming for others; maintenance of computer software.


Ikegami N.,Tokyo University of Agriculture and Technology | Koshida N.,Tokyo University of Agriculture and Technology | Kojima A.,Crestec Corporation | Ohyi H.,Crestec Corporation | And 2 more authors.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | Year: 2013

A planar nanocrystalline silicon (nc-Si) electron emitter array compatible with an active-matrix large-scale integrated (LSI) driving circuit has been developed for massively parallel electron beam direct-write lithography. The electron-emitting part of the device consists of a 50-μm-pitch and 200 × 200 arrays of nc-Si dots fabricated on a Si substrate, and via-first-processed through-silicon-via (TSV) plugs of poly-Si connected with the dots from behind the substrate. Tapered emitter-array etching and electrochemical-oxidation with subsequent annealing and super-critical rinsing and drying processes significantly enhanced the electron emission current by improving and stabilizing uniformity and reducing the process temperature. When the emitter array was driven, electrons were effectively injected into the nc-Si layer through the TSV plugs and quasiballistically emitted through the gold surface electrode. The nc-Si emitter responded to the input signal within times of 0.1 μs or less. A 1:1 pattern transfer experiment demonstrated that 5 × 5 subset square patterns selected from the emitter array can be reproduced on an e-beam resist without any distortions or fluctuations, showing that the energy dispersion of the emitted electrons is quite small. The basic concept of electronic aberration correction performed by an active-matrix LSI driving circuit is also discussed. © 2013 American Vacuum Society. Source


Kojima A.,Crestec Corporation | Kojima A.,Tokyo University of Technology | Ohta T.,Tokyo University of Technology | Ohyi H.,Crestec Corporation | Koshida N.,Tokyo University of Technology
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2010

In this paper we report on the development of a Surface Electron Emission Lithography system (SEL) for high resolution and high throughput Electron Beam (EB) lithography. The Parallel EB lithography is performed on a 1:1 prototype electron stepper. A planar type silicon nanowire array ballistic electron emitter (PBE) is employed as a patterned electron emitting mask in this system. The PBE has a metal/silicon nanowire array/semiconductor structure. The nanowire is composed of interconnected silicon nanocrystallites. When a bias voltage is applied to the nanowire, the electrons injected from semiconductor substrate are accelerated via cascade tunneling between silicon nanocrystallites, and emitted from metal surface electrode. The PBE exhibits properties originated from the ballistic transport in nanosilicon layer. The electrons are emitted with uniform intensity in the surface. The emission current is fluctuation-free and low sensitivity against an environmental atomosphere. The PBE projects the pattern on the target wafer in the electron optics of parallel electric and magnetic fields. If all emitted electrons have same initial velocity, they are focused at the same distance. The pattern of the mask on the PBE is reproduced on the target wafer at the distance of the n (n=1, 2,...) cycle of the spiral trajectory of the electron. Practical resolution is limited by the chromatic aberration in this system. We can improve the resolution by reducing the initial energy spread and emission angle dispersion of the emitted electrons because of the characteristics of the ballistic electron emission from PBE. In this study, we confirmed that the submicron patterns is reproduced all over the area of 2.8 mm square. This homogeneity of exposure in the extended area results from the uniformity of nanowire array produced by self-organized chemical reaction process. This technique will be available to produce next generation MEMS with lower cost than that of optical stepper. © 2010 Copyright SPIE - The International Society for Optical Engineering. Source

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