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Trondheim, Norway

Signorello G.,IBM | Lortscher E.,IBM | Khomyakov P.A.,IBM | Karg S.,IBM | And 5 more authors.
Nature Communications | Year: 2014

Many efficient light-emitting devices and photodetectors are based on semiconductors with, respectively, a direct or indirect bandgap configuration. The less known pseudodirect bandgap configuration can be found in wurtzite (WZ) semiconductors: here electron and hole wave-functions overlap strongly but optical transitions between these states are impaired by symmetry. Switching between bandgap configurations would enable novel photonic applications but large anisotropic strain is normally needed to induce such band structure transitions. Here we show that the luminescence of WZ GaAs nanowires can be switched on and off, by inducing a reversible direct-to-pseudodirect band structure transition, under the influence of a small uniaxial stress. For the first time, we clarify the band structure of WZ GaAs, providing a conclusive picture of the energy and symmetry of the electronic states. We envisage a new generation of devices that can simultaneously serve as efficient light emitters and photodetectors by leveraging the strain degree of freedom. © 2014 Macmillan Publishers Limited. All rights reserved. Source

Hoiaas I.M.,Norwegian University of Science and Technology | Kim D.C.,Norwegian University of Science and Technology | Kim D.C.,CrayoNano AS | Weman H.,Norwegian University of Science and Technology | Weman H.,CrayoNano AS
Applied Physics Letters | Year: 2016

We report the fabrication of a Si(111) crystalline thin film on graphene by the aluminum-induced crystallization (AIC) process. The AIC process of Si(111) on graphene is shown to be enhanced compared to that on an amorphous SiO2 substrate, resulting in a more homogeneous Si(111) thin film structure as revealed by X-ray diffraction and atomic force microscopy measurements. Raman measurements confirm that the graphene is intact throughout the process, retaining its characteristic phonon spectrum without any appearance of the D peak. A red-shift of Raman peaks, which is more pronounced for the 2D peak, is observed in graphene after the crystallization process. It is found to correlate with the red-shift of the Si Raman peak, suggesting an epitaxial relationship between graphene and the adsorbed AIC Si(111) film with both the graphene and Si under tensile strain. © 2016 Author(s). Source

Heilmann M.,Max Planck Institute for the Science of Light | Munshi A.M.,CrayoNano AS | Sarau G.,Max Planck Institute for the Science of Light | Sarau G.,Helmholtz Center Berlin | And 17 more authors.
Nano Letters | Year: 2016

The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts. © 2016 American Chemical Society. Source

Munshi A.M.,Norwegian University of Science and Technology | Dheeraj D.L.,Norwegian University of Science and Technology | Fauske V.T.,Norwegian University of Science and Technology | Kim D.C.,Norwegian University of Science and Technology | And 9 more authors.
Nano Letters | Year: 2014

We report on the epitaxial growth of large-area position-controlled self-catalyzed GaAs nanowires (NWs) directly on Si by molecular beam epitaxy (MBE). Nanohole patterns are defined in a SiO2 mask on 2 in. Si wafers using nanoimprint lithography (NIL) for the growth of positioned GaAs NWs. To optimize the yield of vertical NWs the MBE growth parameter space is tuned, including Ga predeposition time, Ga and As fluxes, growth temperature, and annealing treatment prior to NW growth. In addition, a non-negligible radial growth is observed with increasing growth time and is found to be independent of the As species (i.e., As2 or As4) and the growth temperatures studied. Cross-sectional transmission electron microscopy analysis of the GaAs NW/Si substrate heterointerface reveals an epitaxial growth where NW base fills the oxide hole opening and eventually extends over the oxide mask. These findings have important implications for NW-based device designs with axial and radial p-n junctions. Finally, NIL positioned GaAs/AlGaAs core-shell heterostructured NWs are grown on Si to study the optical properties of the NWs. Room-temperature photoluminescence spectroscopy of ensembles of as-grown core-shell NWs reveals uniform and high optical quality, as required for the subsequent device applications. The combination of NIL and MBE thereby demonstrates the successful heterogeneous integration of highly uniform GaAs NWs on Si, important for fabricating high throughput, large-area position-controlled NW arrays for various optoelectronic device applications. © 2014 American Chemical Society. Source

Fauske V.T.,Norwegian University of Science and Technology | Huh J.,Norwegian University of Science and Technology | Divitini G.,University of Cambridge | Dheeraj D.L.,CrayoNano AS | And 5 more authors.
Nano Letters | Year: 2016

Here we report on the heat-induced solid-state replacement of GaAs by Au in nanowires. Such replacement of semiconductor nanowires by metals is envisioned as a method to achieve well-defined junctions within nanowires. To better understand the mechanisms and dynamics that govern the replacement reaction, we performed in situ heating studies using high-resolution scanning transmission electron microscopy. The dynamic evolution of the phase boundary was investigated, as well as the crystal structure and orientation of the different phases at reaction temperatures. In general, the replacement proceeds one GaAs(111) bilayer at a time, and no fixed epitaxial relation could be found between the two phases. The relative orientation of the phases affects the replacement dynamics and can induce growth twins in the Au nanowire phase. In the case of a limited Au supply, the metal phase can also become liquid. © 2016 American Chemical Society. Source

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